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    SCHEMATIC 5250 FREE Search Results

    SCHEMATIC 5250 FREE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CYD18S18V18-167BBAXC Rochester Electronics LLC 1MX18 DUAL-PORT SRAM, PBGA256, 17 X 17 MM, 1 MM PITCH, LEAD FREE, MO-192, FBGA-256 Visit Rochester Electronics LLC Buy
    CYD36S36V18-167BGXI Rochester Electronics 1MX36 DUAL-PORT SRAM, 4ns, PBGA484, 27 X 27 MM, 2.33 MM HEIGHT, 1 MM PITCH, LEAD FREE, PLASTIC, BGA-484 Visit Rochester Electronics Buy
    NBSG53AMNG Rochester Electronics LLC 53 SERIES, LOW SKEW CLOCK DRIVER, 1 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), QCC16, 3 X 3 MM, LEAD FREE, QFN-16 Visit Rochester Electronics LLC Buy
    CY7B991V-5JXI Rochester Electronics LLC PLL Based Clock Driver, 7B Series, 4 True Output(s), 0 Inverted Output(s), PQCC32, LEAD FREE, PLASTIC, LCC-32 Visit Rochester Electronics LLC Buy
    CYD18S18V18-167BBAXI Rochester Electronics LLC 1MX18 DUAL-PORT SRAM, 4ns, PBGA256, 17 X 17 MM, 1.70 MM HEIGHT, 1 MM PITCH, LEAD FREE, MO-192, FBGA-256 Visit Rochester Electronics LLC Buy

    SCHEMATIC 5250 FREE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Schematics 5250

    Abstract: schematic 5250 GP 035 F QFN 3X3 A113 A114 A115 AN1955 C101 JESD22
    Text: Document Number: MMG5004N Rev. 0, 8/2006 Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology InGaP HBT MMG5004NR2 WLAN Power Amplifier Designed for 802.11a applications with frequencies from 4900 to 5900 MHz. • 23 dBm P1dB CW @ 5.25 GHz


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    PDF MMG5004N MMG5004NR2 Schematics 5250 schematic 5250 GP 035 F QFN 3X3 A113 A114 A115 AN1955 C101 JESD22

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MMG5004N Rev. 0, 8/2006 Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology InGaP HBT MMG5004NR2 WLAN Power Amplifier 4.9-5.9 GHz, 24 dB, 23 dBm 802.11a WLAN POWER AMPLIFIER InGaP HBT ARCHIVE INFORMATION


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    PDF MMG5004N MMG5004NR2

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MMG5004N Rev. 0, 8/2006 Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology InGaP HBT MMG5004NR2 WLAN Power Amplifier 4.9-5.9 GHz, 24 dB, 23 dBm 802.11a WLAN POWER AMPLIFIER InGaP HBT CASE 1483-01 QFN 3x3


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    PDF MMG5004N MMG5004NR2 MMG5004N

    schematic 5250

    Abstract: Schematics 5250 DVD1 LM185 LM285 LM285BXZ LM285BYZ LM285Z LM385 LM385BXZ
    Text: LM185 LM285 LM385 Adjustable Micropower Voltage References General Description The LM185 LM285 LM385 are micropower 3-terminal adjustable band-gap voltage reference diodes Operating from 1 24 to 5 3V and over a 10 mA to 20 mA current range they feature exceptionally low dynamic impedance and good


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    PDF LM185 LM285 LM385 LM385 schematic 5250 Schematics 5250 DVD1 LM285BXZ LM285BYZ LM285Z LM385BXZ

    AR6001

    Abstract: LTCC BPF DFWM-AHA90 computer monitor schematic diagram atheros schematic schematic dsrc
    Text: DFWM-AHA90 DFWM-AHA90 Wireless LAN Module A IEEE 802.11a/g/b SDIO&Local bus Wireless LAN Module for various applications. 1. Applications: Applications for cellular handsets and consumer electronic devices that require low power consumption. 2. Features: Module size as 20x20x2.4 mm


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    PDF DFWM-AHA90 11a/g/b 20x20x2 IEEE802 6-54Mbps 1-54Mbps DFWM-AHA90 40MHz 32KHz AR6001 LTCC BPF computer monitor schematic diagram atheros schematic schematic dsrc

    TDA 1157

    Abstract: Schematics 5250 IC TDA 2002 tda 2200 EvalBoard TDA5250 tda 1200 FM EPCOS E SERIES INTERMEDIATE CAPACITANCE VALUES quartz oscilator nom 870 b 2nf
    Text: Wireless Components ASK/FSK 868MHz Wireless Transceiver TDA 5250 D2 Version 1.6 Specification July 2002 confidential preliminary confidential Revision History Current Version: Preliminary Specification V1.6 as of 09.07.02 describing design step D2 Previous Version: V1.5


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    PDF 868MHz 100nF 0603-C TDA5250 TDA 1157 Schematics 5250 IC TDA 2002 tda 2200 EvalBoard tda 1200 FM EPCOS E SERIES INTERMEDIATE CAPACITANCE VALUES quartz oscilator nom 870 b 2nf

    Untitled

    Abstract: No abstract text available
    Text: 856932 847 MHz SAW Filter Applications General purpose wireless WCDMA Applications Product Features Functional Block Diagram Top view Usable bandwidth 30 MHz Low Loss Single-ended operation No matching required for operation at 50Ω Small Size: 3.00 x 3.00 x 1.22 mm


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    PDF 2002/95/EC)

    8X305

    Abstract: 8X305 assembly manual HP1650A d3800 dp8340 ior 227h Specification of seven segment 5250 PC327 TK 9107 8X305 manual
    Text: MPA-II National Semiconductor Application Note 641 Thomas Norcross Paul J Patchen Thomas J Quigley Tim Short Debra Worsley Laura Johnson April 1995 Table of Contents 1 0 INTRODUCTION About This System User Guide Contents of the MPA-II Design Evaluation Kit


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    PDF DP8344B 20-3A 8X305 8X305 assembly manual HP1650A d3800 dp8340 ior 227h Specification of seven segment 5250 PC327 TK 9107 8X305 manual

    Untitled

    Abstract: No abstract text available
    Text: SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier SZP-5026Z Preliminary 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar


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    PDF SZP-5026Z SOF-26 SZP-5026Z SZP-5026Z-EVB1 SZP-5026Z-EVB2 15GHz 35GHz EDS-105366

    CAP, 0603 4.7pF

    Abstract: SOF-26 SZP-5026 5.7Ghz low noise amplifier MCH184CN105K 802.11a Amplifier Schematics 5250 SZP-5026Z 600S5
    Text: SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier SZP-5026Z Preliminary 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar


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    PDF SZP-5026Z SOF-26 SZP-5026Z SZP-5026Z-EVB1 SZP-5026Z-EVB2 15GHz 35GHz EDS-105366 CAP, 0603 4.7pF SOF-26 SZP-5026 5.7Ghz low noise amplifier MCH184CN105K 802.11a Amplifier Schematics 5250 600S5

    fan 7320

    Abstract: WDR2400 7400 fan-in 3570 1210 123 hl 4020 1210 1420 1680 2040 7220
    Text: • 0.8µ m Clock Skew Management ■ ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– INTRODUCTION This application note explains the need for clock skew management and how to apply OKI's clock skew management


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    PDF OKI-6994 1-800-OKI-6388 fan 7320 WDR2400 7400 fan-in 3570 1210 123 hl 4020 1210 1420 1680 2040 7220

    free transistor

    Abstract: BFR740L3RH uln 2008 uln 2008 datasheet Digital Oscilloscope Preamplifier ULN 2009 ultra Low Noise ULN types 825000 LQP10A MTA-100
    Text: Application Note, Rev. 1.1, May 2009 Application Note No. 170 BFR740L3RH SiGe:C Ultra Low Noise RF Transistor in 5 – 6 GHz LNA Application with 14 dB Gain, 1.3 dB Noise Figure & < 100 nanosecond Turn-On / Turn-Off Time TSLP-3-9 Pb-Free / Halogen Free Transistor Package


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    PDF BFR740L3RH free transistor uln 2008 uln 2008 datasheet Digital Oscilloscope Preamplifier ULN 2009 ultra Low Noise ULN types 825000 LQP10A MTA-100

    Untitled

    Abstract: No abstract text available
    Text: August 2008 Automotive Grade AUIR33401S PROTECTED HIGH SIDE SWITCH FOR AUTOMOTIVE DC MOTOR DRIVE Features • • • • • • • • • • • • • Up to 20Khz PWM switching capability Charge pump for DC operation Active Dv/Dt control Load current feedback


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    PDF AUIR33401S 20Khz

    FMH23N60E

    Abstract: Schematics 5250 fmh23n60es
    Text: FMH23N60ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching


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    PDF FMH23N60ES FMH23N60E Schematics 5250 fmh23n60es

    Untitled

    Abstract: No abstract text available
    Text: TQQ7307 2535 MHz LTE Band 7 Uplink BAW Filter Applications • LTE Band 7 Uplink Infrastructure • Base Station • General Purpose Wireless 6 Pin 3x3 mm leadless SMT Package Product Features • • • • • • • • Functional Block Diagram 70 MHz Bandwidth


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    PDF TQQ7307 TQQ7307

    FMH28N50ES

    Abstract: Schematics 5250 fmh28n50e
    Text: FMH28N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching


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    PDF FMH28N50ES FMH28N50ES Schematics 5250 fmh28n50e

    FMR23N50E

    Abstract: tc1602 Schematics 5250
    Text: FMR23N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching


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    PDF FMR23N50E FMR23N50E tc1602 Schematics 5250

    fmh*23N50E

    Abstract: FMH23N50E FMH2 FMH23N50 Schematics 5250
    Text: FMH23N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching


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    PDF FMH23N50E fmh*23N50E FMH23N50E FMH2 FMH23N50 Schematics 5250

    FMR23N60ES

    Abstract: fmr23n60e Schematics 5250 1-56mH
    Text: FMR23N60ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching


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    PDF FMR23N60ES FMR23N60ES fmr23n60e Schematics 5250 1-56mH

    Untitled

    Abstract: No abstract text available
    Text: TQQ7307 2535 MHz LTE Band 7 Uplink BAW Filter Applications • LTE Band 7 Uplink Infrastructure • Base Station • General Purpose Wireless 6 Pin 3 x 3 mm leadless SMT Package Product Features • • • • • • • • Functional Block Diagram


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    PDF TQQ7307 TQQ7307

    Schematics 5250

    Abstract: fmr28n50e DT69
    Text: FMR28N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching


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    PDF FMR28N50ES Schematics 5250 fmr28n50e DT69

    SZP-5026Z

    Abstract: SZP5026Z SZP-5026 Schematics 5250 SZP-5026Z-EVB1 SZP-5026Z-EVB2 bipolar transistor ghz s-parameter SOF-26 marking 535 RF
    Text: Preliminary Product Description Sirenza Microdevices’ SZP-5026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with


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    PDF SZP-5026Z protecSZP-5026Z SZP-5026Z" 35GHz SZP-5026Z-EVB2 SZP-5026Z* SZP-5026Z-EVB1 SOF-26 EDS-105366 SZP5026Z SZP-5026 Schematics 5250 SZP-5026Z-EVB1 SZP-5026Z-EVB2 bipolar transistor ghz s-parameter SOF-26 marking 535 RF

    AUIR33401S

    Abstract: No abstract text available
    Text: Automotive Grade AUIR33401S PROTECTED HIGH SIDE SWITCH FOR AUTOMOTIVE DC MOTOR DRIVE Features • • • • • • • • • • • • • Up to 20Khz PWM switching capability Charge pump for DC operation Active Dv/Dt control Load current feedback Short-circuit protection


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    PDF AUIR33401S 20Khz AUIR33401S

    Untitled

    Abstract: No abstract text available
    Text: RFPA5026 RFPA5026 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: DFN, 6-pin, 5.59mm x 6.23mm x 0.85mm Vcc Features        RFPA5026 P1dB=33dBm at 5V 802.11g 54Mb/s Class AB Performance POUT =25dBm at 2.5% EVM,


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    PDF RFPA5026 RFPA5026 33dBm 54Mb/s 25dBm 680mA CH185A1R8DK MCH182CN104K