transorb 400v
Abstract: transorb diode BIDIRECTIONAL p4625-nd KC006L-ND 12v transformer diode RS405L 29MF250-9 220uF 450v 29SJ250-10k RS405L Power
Text: March 1999 Application Note 42043 ML4803 240W Off-Line Power Supply with PFC INTRODUCTION Included in this Application Note are a reference schematic, ML4803 design equations, the circuit layout, and parts list. The reference schematic demonstrates how the ML4803 can meet the requirements of a PFC
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ML4803
IEC1000-3-2.
transorb 400v
transorb diode BIDIRECTIONAL
p4625-nd
KC006L-ND
12v transformer
diode RS405L
29MF250-9
220uF 450v
29SJ250-10k
RS405L Power
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R2d DIODE
Abstract: optocoupler MTBF CAPACITOR mtbf r2d transistor R2C Zener R16A transistor MTBF diode r2c TRANSISTOR kps10 optocoupler MTBF calculation
Text: Preliminary Reliability Prediction Analysis For Power Supply Model: KPS10 Series 1 INTRODUCTION This analysis and prediction is based on Part Count Reliability Prediction method as specified in MILHDBK-217F. The component list is based on the schematic diagram of the power supply unit. It must
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KPS10
MILHDBK-217F.
KPS10Series
R2d DIODE
optocoupler MTBF
CAPACITOR mtbf
r2d transistor
R2C Zener
R16A
transistor MTBF
diode r2c
TRANSISTOR kps10
optocoupler MTBF calculation
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transformer mtbf
Abstract: SCT601 300C
Text: Preliminary Reliability Prediction Analysis For Power Supply Model: SCT601 1 INTRODUCTION This analysis and prediction is based on Part Count Reliability Prediction method as specified in MILHDBK-217F. The component list is based on the schematic diagram of the power supply unit. It must
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SCT601
MILHDBK-217F.
transformer mtbf
SCT601
300C
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mosfet MTBF
Abstract: 300C SCD401515 367HR
Text: Preliminary Reliability Prediction Analysis For Power Supply Model: SCD401515 1 INTRODUCTION This analysis and prediction is based on Part Count Reliability Prediction method as specified in MILHDBK-217F. The component list is based on the schematic diagram of the power supply unit. It must
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SCD401515
MILHDBK-217F.
367hrs.
367hrs
mosfet MTBF
300C
SCD401515
367HR
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transformer mtbf
Abstract: mosfet MTBF 300C
Text: Preliminary Reliability Prediction Analysis For Power Supply Model: C040105D 1 INTRODUCTION This analysis and prediction is based on Part Count Reliability Prediction method as specified in MILHDBK-217F. The component list is based on the schematic diagram of the power supply unit. It must
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C040105D
MILHDBK-217F.
335hrs.
335hrs
transformer mtbf
mosfet MTBF
300C
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R2d DIODE
Abstract: R2C Zener optocoupler MTBF transformer mtbf diode r2c transistor t1A Zener Diode r2b TRANSISTOR mosfet transistor R2b r2c transistor
Text: Preliminary Reliability Prediction Analysis For Power Supply Model: KPS15 Series 1 INTRODUCTION This analysis and prediction is based on Part Count Reliability Prediction method as specified in MILHDBK-217F. The component list is based on the schematic diagram of the power supply unit. It must
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KPS15
MILHDBK-217F.
KPS15Series
R2d DIODE
R2C Zener
optocoupler MTBF
transformer mtbf
diode r2c
transistor t1A
Zener Diode r2b
TRANSISTOR mosfet
transistor R2b
r2c transistor
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hseries
Abstract: 50-902-0 300C mosfet MTBF
Text: Preliminary Reliability Prediction Analysis For Power Supply Model HTD Case style 1 INTRODUCTION This analysis and prediction is based on Part Count Reliability Prediction method as specified in MILHDBK-217F. The component list is based on the schematic diagram of the power supply unit. It must
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MILHDBK-217F.
hseries
50-902-0
300C
mosfet MTBF
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SCS120PW12
Abstract: 300C hrs connector circuit board mtbf
Text: Preliminary Reliability Prediction Analysis For Power Supply Model: SCS120PW-12 through 24V 1 INTRODUCTION This analysis and prediction is based on Part Count Reliability Prediction method as specified in MILHDBK-217F. The component list is based on the schematic diagram of the power supply unit. It must
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SCS120PW-12
MILHDBK-217F.
SCS120PWeries
SCS120PW12
300C
hrs connector
circuit board mtbf
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SONY APS 252 power supply
Abstract: 8 pin ic 9435A SONY APS 283 SONY APS 252 IRF 9460 SONY APS 254 SONY APS 283 power supply transformer 18-0-18 step down transformer 12-0-12 MPSA06 fairchild transistor
Text: Power−Supply Cookbook Maxim Power Supply Cookbook Compiled: November 2010 Available at: http://www.maxim−ic.com/cookbook/ Maxim has developed power supplies for a wide range of applications. Choose the specifications that most closely meet your needs. Then view a circuit design, complete with schematic diagram and
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CDRH6D28-100
MAX1701
100uF
100pF
560pF
NDC632P
QS03L
220uF
SONY APS 252 power supply
8 pin ic 9435A
SONY APS 283
SONY APS 252
IRF 9460
SONY APS 254
SONY APS 283 power supply
transformer 18-0-18
step down transformer 12-0-12
MPSA06 fairchild transistor
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BUX98P
Abstract: No abstract text available
Text: BUX98P SILICON NPN SWITCHING TRANSISTOR n n n SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE HIGH SPEED TRANSISTOR SUITED FOR USE ON THE 220 AND 380V MAINS SUITABLE FOR SWITCH MODE POWER SUPPLY UPS, DC AND AC MOTOR CONTROL 3 2 1 TO-218 INTERNAL SCHEMATIC DIAGRAM
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BUX98P
O-218
BUX98P
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on line ups circuit schematic diagram
Abstract: AN3020 SA2531 SA2532 SAN3020
Text: sames SAN3020 APPLICATION NOTE SINGLE CHIP TELEPHONE POWER EXTRACTION FOR EXTERNAL LOADS 1 Scope This application note describes a simple add-on circuit for extracting current to supply external loads. It also includes hardware description ,schematic and Vout/Iout curves.
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SAN3020
on line ups circuit schematic diagram
AN3020
SA2531
SA2532
SAN3020
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Untitled
Abstract: No abstract text available
Text: User's Guide SLVU392 – July 2010 TPS53125EVM-599 The TPS53125EVM-599 Evaluation Module presents an easy-to-use reference design for a common dual output power supply using the TPS53125 controller in cost-sensitive applications. Also included are the schematic, board layout, and bill of materials.
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SLVU392
TPS53125EVM-599
TPS53125EVM-599
TPS53125
TPS53125E
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moc812
Abstract: MOC8113 MOC8111 MOC8111S MOC8111SD MOC8111W MOC8112
Text: 6-PIN DIP OPTOCOUPLERS FOR POWER SUPPLY APPLICATIONS NO BASE CONNECTION MOC8111 MOC8112 MOC8113 PACKAGE SCHEMATIC ANODE 1 6 6 N/C 6 CATHODE 2 1 5 COLLECTOR 1 N/C 3 4 EMITTER 6 1 DESCRIPTION The MOC811X series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. The base of the transistor is not
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MOC8111
MOC8112
MOC8113
MOC811X
MOC8111:
MOC8112:
MOC8113:
E90700)
moc812
MOC8113
MOC8111
MOC8111S
MOC8111SD
MOC8111W
MOC8112
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CNY17F-3
Abstract: moc8103 MOC8101-5 ic base for 40 pin DIP ic CNY17F-X CNY17F-1 CNY17F-2 MOC8101 CNY17F2 MOC8104
Text: 6-PIN DIP OPTOCOUPLERS FOR POWER SUPPLY APPLICATIONS NO BASE CONNECTION MOC8101 MOC8105 CNY17F-1 MOC8102 MOC8106 CNY17F-2 MOC8103 MOC8107 CNY17F-3 MOC8104 MOC8108 CNY17F-4 PACKAGE SCHEMATIC 1 NC 2 6 6 5 6 3 NC 4 1 PIN 1. ANODE 2. CATHODE 3. NO CONNECTION
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MOC8101
MOC8105
CNY17F-1
MOC8102
MOC8106
CNY17F-2
MOC8103
MOC8107
CNY17F-3
MOC8104
CNY17F-3
moc8103
MOC8101-5
ic base for 40 pin DIP ic
CNY17F-X
CNY17F-1
CNY17F-2
MOC8101
CNY17F2
MOC8104
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031-208
Abstract: No abstract text available
Text: RF2126 HIGH POWER LINEAR AMPLIFIER Typical Applications • 2.5GHz ISM Band Applications • Commercial and Consumer Systems • Digital Communication Systems • Portable Battery-Powered Equipment • PCS Communication Systems Product Description The RF2126 is a high-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor HBT
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RF2126
RF2126
1800MHz
2500MHz.
2450MHz
031-208
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1800mhz rf frequency power amplifier circuit
Abstract: RF2126
Text: RF2126 HIGH POWER LINEAR AMPLIFIER Typical Applications • 2.5GHz ISM Band Applications • Commercial and Consumer Systems • Digital Communication Systems • Portable Battery-Powered Equipment • PCS Communication Systems Product Description The RF2126 is a high-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor HBT
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RF2126
RF2126
1800MHz
2500MHz.
2450MHz
1800mhz rf frequency power amplifier circuit
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1800mhz rf frequency power amplifier circuit
Abstract: No abstract text available
Text: RF2126 HIGH POWER LINEAR AMPLIFIER Typical Applications • 2.5GHz ISM Band Applications • Commercial and Consumer Systems • Digital Communication Systems • Portable Battery-Powered Equipment • PCS Communication Systems Product Description The RF2126 is a high-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor HBT
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RF2126
RF2126
1800MHz
2500MHz.
2450MHz
1800mhz rf frequency power amplifier circuit
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1800mhz rf frequency power amplifier circuit
Abstract: RF2126 schematic diagram 48V power supply power supply schematic 60v
Text: RF2126 HIGH POWER LINEAR AMPLIFIER Typical Applications • 2.5GHz ISM Band Applications • Commercial and Consumer Systems • Digital Communication Systems • Portable Battery-Powered Equipment • PCS Communication Systems Product Description The RF2126 is a high-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor HBT
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RF2126
RF2126
1800MHz
2500MHz.
1800mhz rf frequency power amplifier circuit
schematic diagram 48V power supply
power supply schematic 60v
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RF2126
Abstract: No abstract text available
Text: RF2126 • Commercial and Consumer Systems • Digital Communication Systems • Portable Battery Powered Equipment 2 • PCS Communication Systems The RF2126 is a high-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor HBT
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RF2126
RF2126
1800MHz
2500MHz.
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Untitled
Abstract: No abstract text available
Text: Preliminary Product Description SPA-2118 Stanford Microdevices’ SPA-2118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial
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SPA-2118
SPA-2118
IS-95
Powe45°
AN-029
EDS-102012
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MCH18
Abstract: MCR03 SPA-2118 TAJB106K020R IC1150
Text: Preliminary Product Description SPA-2118 Sirenza Microdevices’ SPA-2118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial
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SPA-2118
SPA-2118
IS-95
EDS-102012
MCH18
MCR03
TAJB106K020R
IC1150
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SPA-2118
Abstract: TRANSISTOR 726 transistor a 726 ECB-101161
Text: Preliminary Product Description SPA-2118 Stanford Microdevices’ SPA-2118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial
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SPA-2118
SPA-2118
IS-95
AN-029
EDS-102012
TRANSISTOR 726
transistor a 726
ECB-101161
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BUX348
Abstract: No abstract text available
Text: BUX348 FAST-SWITCHING POWER TRANSISTOR . . . . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE FAST SWITCHING OFF-LINE APPLICATIONS TO 380V APPLICATIONS . SWITCH MODE POWER SUPPLIES . UNINTERRUPTABLE POWER SUPPLY . DC AND AC MOTOR CONTROL INTERNAL SCHEMATIC DIAGRAM
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OCR Scan
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BUX348
P0030
BUX348
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Untitled
Abstract: No abstract text available
Text: FMC6A IMD1A Transistors I Digital Transistor Dual Digital Transistors for Power Management FMC6A •Features 1 ) DTA115E and DTC115E transistors are housed in an SMT package. •A bsolu te maximum ratings (Ta=25'C) Parameter Supply voltage •C irc u it schematic
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DTA115E
DTC115E
0Dlb713
O-220FN
O-220FN
O220FP
T0-220FP,
O-220FP.
7020c
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