TYN616
Abstract: TO-92 C106 c106 1006
Text: Products Search Home About Us Product News Application Message to Us Contact Us Corp.News | Industry News Products Category You are Here : >Home>Product Showcase > Transistor pair Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode
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O-202
60/16A
BT151
75/23A
O-220
BT152
75/35A
TYN616
TYN616
TO-92 C106
c106 1006
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TYN616
Abstract: 100-6 scr Transistor 2p4m SCR 2P4M
Text: Products Search Home About Us Products Category Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistors/IC Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS
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O-202
TS820
60/16A
O-220
BT151
75/23A
TYN616
100-6 scr
Transistor 2p4m
SCR 2P4M
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transistors C106
Abstract: TO202 package transistor 2p4m
Text: Products Search Home Products Category About Us Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistors/IC Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS
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O-202
60/16A
O-220
BT151
75/23A
transistors C106
TO202 package
transistor 2p4m
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ana 650,
Abstract: MSASC100H45HR MSASC100H45H
Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSASC100H45H MSASC100H45HR Features • • • • • • • • Tungsten/Platinum schottky barrier Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability
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MSASC100H45H
MSASC100H45HR
MSASC100H45H)
MSASC100H45HR)
MSC0292A
IR125
ana 650,
MSASC100H45HR
MSASC100H45H
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MSASC100W45H
Abstract: MSASC100W45HR Schottky diode 650 V 80A
Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSASC100W45H MSASC100W45HR Features • • • • • • • • Tungsten schottky barrier Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability
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MSASC100W45H
MSASC100W45HR
MSASC100W45H)
MSASC100W45HR)
Repetitive300
IR125
MSC0291A
MSASC100W45H
MSASC100W45HR
Schottky diode 650 V 80A
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Equivalent ana 650
Abstract: 1N6791 MSASC100W45H MSASC100W45HR
Text: MSASC100W45H 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSASC100W45HR Or 1N6791 Features • • • • • • Tungsten schottky barrier Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability
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MSASC100W45H
MSASC100W45HR
1N6791
MSASC100W45H)
MSASC100W45HR)
IR125
MSC0291A
Equivalent ana 650
1N6791
MSASC100W45H
MSASC100W45HR
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MA4E2508L-1112
Abstract: MA4E2502 MA4E2508 MA4E2508H MA4E2508L MA4E2508L-1112T MA4E2508L-1112W MA4E2508M MA4E2508H-1112
Text: SURMOUNTTM Low and Medium & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair Features • Extremely Low Parasitic Capitance and Inductance • Surface Mountable in Microwave Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide
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MA4E2508
MA4E2508M
MA4E2508H
MA4E2508L-1112
MA4E2502
MA4E2508H
MA4E2508L
MA4E2508L-1112T
MA4E2508L-1112W
MA4E2508M
MA4E2508H-1112
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MA4E2502
Abstract: MA4E2508 MA4E2508H MA4E2508L MA4E2508L-1112 MA4E2508L-1112T MA4E2508L-1112W MA4E2508M MA4E2508M-1112 Schottky diode wafer
Text: MA4E2508 Series SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair Features M/A-COM Products Rev. V3 Case Style 1112 • Extremely Low Parasitic Capitance & Inductance • Surface Mountable in Microwave Circuits, No Wirebonds Required
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MA4E2508
MA4E2502
MA4E2508H
MA4E2508L
MA4E2508L-1112
MA4E2508L-1112T
MA4E2508L-1112W
MA4E2508M
MA4E2508M-1112
Schottky diode wafer
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schottky diode MACOM SPICE model Cjpar
Abstract: MACOM Schottky Diode
Text: MA4E2508 Series SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair Features M/A-COM Products Rev. V3 Case Style 1112 • Extremely Low Parasitic Capitance & Inductance • Surface Mountable in Microwave Circuits, No Wirebonds Required
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MA4E2508
schottky diode MACOM SPICE model Cjpar
MACOM Schottky Diode
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Untitled
Abstract: No abstract text available
Text: MA4E2508 Series SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair Features M/A-COM Products Rev. V3 Case Style 1112 • Extremely Low Parasitic Capitance & Inductance • Surface Mountable in Microwave Circuits, No Wirebonds Required
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MA4E2508
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triac mw 131 600d
Abstract: 65n06
Text: / 20 13 -2 01 4 Nell,your reliable green partner Europe North America China Taiwan ,Taipei Africa South America Oceania Evolving green Innovation and Future Worldwide Presence Headquarter TEL FAX E-Mail Nell semiconductor Taiwan,Taipei +886-2-26474181 +886-2-26429717
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ma*2502
Abstract: MA4E2502 MA4E2502H MA4E2502L MA4E2502L-1246 MA4E2502L-1246T MA4E2502L-1246W MA4E2502M MA4E2502M-1246 MA4E2502M-1246W
Text: SURMOUNTTM Low, Medium and High Barrier Silicon Schottky Diodes Features • Extremely Low Parasitic Capitance and Inductance • Surface Mountable in Microwave Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide Scratch Protection
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MA4E2502
MA4E2502M
MA4E2502H
ma*2502
MA4E2502H
MA4E2502L
MA4E2502L-1246
MA4E2502L-1246T
MA4E2502L-1246W
MA4E2502M
MA4E2502M-1246
MA4E2502M-1246W
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MA4E2502L-1246
Abstract: MA4E2502 ma*2502 MA4E2502H MA4E2502L MA4E2502L-1246W MA4E2502M MA4E2502M-1246 MA4E2502M-1246W MADS-002502
Text: MA4E2502 Series SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes Features • Extremely Low Parasitic Capacitance and Inductance • Surface Mountable in Microwavable Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide
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MA4E2502
MA4E2502L-1246
ma*2502
MA4E2502H
MA4E2502L
MA4E2502L-1246W
MA4E2502M
MA4E2502M-1246
MA4E2502M-1246W
MADS-002502
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MA4E2502_Series
Abstract: MA4E2502 Series mads-002502-1246hp MA4E2502 MA4E2502H MA4E2502L MA4E2502L-1246 MA4E2502L-1246W MA4E2502M MA4E2502M-1246
Text: MA4E2502 Series SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes Features • Extremely Low Parasitic Capacitance and Inductance • Surface Mountable in Microwavable Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide
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MA4E2502
MA4E2502_Series
MA4E2502 Series
mads-002502-1246hp
MA4E2502H
MA4E2502L
MA4E2502L-1246
MA4E2502L-1246W
MA4E2502M
MA4E2502M-1246
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Untitled
Abstract: No abstract text available
Text: MA4E2502 Series SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes Features • Extremely Low Parasitic Capitance and Inductance • Surface Mountable in Microwavable Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide
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MA4E2502
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schottky diode MACOM SPICE model
Abstract: schottky diode MACOM SPICE model Cjpar MA4E2502L-1246 Advanced Schottky Family
Text: MA4E2502 Series SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes Features • Extremely Low Parasitic Capitance and Inductance • Surface Mountable in Microwavable Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide
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MA4E2502
schottky diode MACOM SPICE model
schottky diode MACOM SPICE model Cjpar
MA4E2502L-1246
Advanced Schottky Family
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MA4E2502L-1246T
Abstract: ma*2502 MA4E2502 MA4E2502H MA4E2502L MA4E2502L-1246 MA4E2502L-1246W MA4E2502M MA4E2502M-1246 MA4E2502M-1246W
Text: SURMOUNTTM Low, Medium and High Barrier Silicon Schottky Diodes MA4E2502 Series V 4.00 Features Case Style 1246 Extremely Low Parasitic Capitance and Inductance Suface Mountable in Microwave Circuits , No Wirebonds Required n Rugged HMIC Construction with Polyimide Scratch
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MA4E2502
MA4E2502L-1246W
MA4E2502L-1246
MA4E2502L-1246T
MA4E2502M-1246W
MA4E2502M-1246
MA4E2502M-1246T
MA4E2502H-1246W
MA4E2502H-1246
MA4E2502L-1246T
ma*2502
MA4E2502H
MA4E2502L
MA4E2502L-1246
MA4E2502L-1246W
MA4E2502M
MA4E2502M-1246
MA4E2502M-1246W
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Untitled
Abstract: No abstract text available
Text: MADS-002545-1307 Series SURMOUNTTM Schottky Diodes: Cross-Over Quad Series Ultra-Small 600x600um Surface-Mount Chip Features M/A-COM Products Rev. V3 Top View • Ultra Low Parasitic Capacitance and Inductance • Surface Mountable in Microwave Circuits , No
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MADS-002545-1307
600x600um
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MADS-002545-1307L
Abstract: component, pedestals Schottky diode Die MADS-002545-1307M MADS-002545-1307MG MADS-002545-1307MT SN63 PB36
Text: MADS-002545-1307 Series SURMOUNTTM Schottky Diodes: Cross-Over Quad Series Ultra-Small 600x600um Surface-Mount Chip Features M/A-COM Products Rev. V3 Topview • Ultra Low Parasitic Capacitance and Inductance • Surface Mountable in Microwave Circuits , No
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MADS-002545-1307
600x600um
MADS-002545-1307L
component, pedestals
Schottky diode Die
MADS-002545-1307M
MADS-002545-1307MG
MADS-002545-1307MT
SN63 PB36
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NTE74HC4067
Abstract: NTE4097B NTE74HC299 NTE4017B NTE4007 NTE4023B NTE4027B NTE74HC4053 NTE4553B NTE74HC165
Text: Semiconductors Integrated Circuits Integrated Circuits cont. Part Number Description NTE40175B IC-CMOS, Quad D-Type Flip-Flop NTE4017B IC-CMOS, Decade Counter w/10 Decoder Outputs NTE40182B IC-CMOS, Look Ahead Carry Generator Part Number Description NTE4018B
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NTE40175B
NTE4017B
NTE40182B
NTE4018B
NTE4001B
NTE4019B
NTE4001BT
NTE40192B
NTE4002B
NTE40193B
NTE74HC4067
NTE4097B
NTE74HC299
NTE4017B
NTE4007
NTE4023B
NTE4027B
NTE74HC4053
NTE4553B
NTE74HC165
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Untitled
Abstract: No abstract text available
Text: Microsemi r n m m Santa Ana, CA Progress Powered b y Technology M 2 830 S. Fairview St. Santa Ana, C A 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSASC100H45H MSASC100H45HR Features Tungsten/Platinum schottky barrier Oxide passivated structure for very low leakage currents
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OCR Scan
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PDF
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MSASC100H45H
MSASC100H45HR
MSASC100H45H)
MSASC100H45HR)
MSC0292A
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ana 650
Abstract: No abstract text available
Text: H Micmsemi m m Santa Ana, CA Progress Pow ered b y Technology M 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSASC100H45H MSASC100H45HR Features Tungsten/Platinum schottky barrier Oxide passivated structure for very low leakage currents
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OCR Scan
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PDF
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MSASC100H45H
MSASC100H45HR
MSASC100H45H)
MSASC100H45HR)
MSC0292A
ana 650
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Untitled
Abstract: No abstract text available
Text: m M m m Santa Ana. CA ic m s m e m Pfiot/fltss P a w t f t d b y T eeltnolúgy i MSASC100W45H 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSASC100W45HR Or 1N6791 Features Tungsten schottky barrier Oxide passivated structure for very low leakage currents
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OCR Scan
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PDF
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MSASC100W45H
MSASC100W45HR
1N6791
MSASC100W45H)
MSASC100W45HR)
--ft---125
MSC0291A
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Untitled
Abstract: No abstract text available
Text: Micmsemi m m m Santa Ana. CA PflogfiÉS s P o w e re t/ b y T ë ù h nû tù Q y m MSASC100W45H 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSASC100W45HR Or 1N6791 Features Tungsten schottky barrier Oxide passivated structure for very low leakage currents
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OCR Scan
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PDF
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MSASC100W45H
MSASC100W45HR
1N6791
MSASC100W45H)
MSASC100W45HR)
sw125
MSC0291A
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