SCHOTTKY DIODE MACOM SPICE MODEL Search Results

SCHOTTKY DIODE MACOM SPICE MODEL Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
CUHS20S60		Toshiba Electronic Devices & Storage Corporation	Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H
CUHS20F60		Toshiba Electronic Devices & Storage Corporation	Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H
CUHS15S60		Toshiba Electronic Devices & Storage Corporation	Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H
CUHS15F60		Toshiba Electronic Devices & Storage Corporation	Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H
TRS8E65H		Toshiba Electronic Devices & Storage Corporation	SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L

SCHOTTKY DIODE MACOM SPICE MODEL Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
65rj Abstract: No abstract text available Text: MA4E2502 Series SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes Features • Extremely Low Parasitic Capitance and Inductance • Surface Mountable in Microwavable Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide	Original	MA4E2502 65rj	PDF
Untitled Abstract: No abstract text available Text: MA4E2502 Series SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes Features • Extremely Low Parasitic Capitance and Inductance • Surface Mountable in Microwavable Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide	Original	MA4E2502	PDF
schottky diode MACOM SPICE model Abstract: schottky diode MACOM SPICE model Cjpar MA4E2502L-1246 Advanced Schottky Family Text: MA4E2502 Series SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes Features • Extremely Low Parasitic Capitance and Inductance • Surface Mountable in Microwavable Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide	Original	MA4E2502 schottky diode MACOM SPICE model schottky diode MACOM SPICE model Cjpar MA4E2502L-1246 Advanced Schottky Family	PDF
MA4E2502 Abstract: MA4E2508 MA4E2508H MA4E2508L MA4E2508L-1112 MA4E2508L-1112T MA4E2508L-1112W MA4E2508M MA4E2508M-1112 Schottky diode wafer Text: MA4E2508 Series SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair Features M/A-COM Products Rev. V3 Case Style 1112 • Extremely Low Parasitic Capitance & Inductance • Surface Mountable in Microwave Circuits, No Wirebonds Required	Original	MA4E2508 MA4E2502 MA4E2508H MA4E2508L MA4E2508L-1112 MA4E2508L-1112T MA4E2508L-1112W MA4E2508M MA4E2508M-1112 Schottky diode wafer	PDF
schottky diode MACOM SPICE model Cjpar Abstract: MACOM Schottky Diode Text: MA4E2508 Series SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair Features M/A-COM Products Rev. V3 Case Style 1112 • Extremely Low Parasitic Capitance & Inductance • Surface Mountable in Microwave Circuits, No Wirebonds Required	Original	MA4E2508 schottky diode MACOM SPICE model Cjpar MACOM Schottky Diode	PDF
schottky diode MACOM SPICE model Cjpar Abstract: No abstract text available Text: MA4E2532L-1113, MA4E2532M-1113 SURMOUNTTM Low & Medium Barrier Silicon Schottky Diodes: Ring Quad Series Features M/A-COM Products Rev. V3 Case Style 1113 • Extremely Low Parasitic Capacitance and Inductance • Surface Mountable in Microwave Circuits, No	Original	MA4E2532L-1113, MA4E2532M-1113 MA4E2532-1113 schottky diode MACOM SPICE model Cjpar	PDF
low barrier schottky Abstract: MA4E2502 MA4E2532L-1113 MA4E2532L-1113T MA4E2532L-1113W MA4E2532M-1113 macom Text: MA4E2532L-1113, MA4E2532M-1113 SURMOUNTTM Low & Medium Barrier Silicon Schottky Diodes: Ring Quad Series Features M/A-COM Products Rev. V3 Case Style 1113 • Extremely Low Parasitic Capacitance and Inductance • Surface Mountable in Microwave Circuits, No	Original	MA4E2532L-1113, MA4E2532M-1113 MA4E2532-1113 low barrier schottky MA4E2502 MA4E2532L-1113 MA4E2532L-1113T MA4E2532L-1113W MA4E2532M-1113 macom	PDF
MA4E2054D-287 Abstract: No abstract text available Text: MA4E2054 Series Surface Mount Low Barrier Schottky Diode M/A-COM Products Rev. V7 Features • Low IR <100nA @ 1V, <500nA @ 3V • Designed for High Volume, Low Cost Detector and Mixer Applications • High Detector Sensitivity: -55 dBm TSS • Low Capacitance: 0.30 pF	Original	MA4E2054 100nA 500nA OT-23 OT-143 OT-323 OD-323 MA4E2054D-287	PDF
900 mhz schottky diode Abstract: No abstract text available Text: MA4E2054 Series Surface Mount Low Barrier Schottky Diode M/A-COM Products Rev. V7 Features • Low IR <100nA @ 1V, <500nA @ 3V • Designed for High Volume, Low Cost Detector and Mixer Applications • High Detector Sensitivity: -55 dBm TSS • Low Capacitance: 0.30 pF	Original	MA4E2054 100nA 500nA OT-23 OT-143 OT-323 OD-323 900 mhz schottky diode	PDF
Untitled Abstract: No abstract text available Text: MA4E2054L-1261 Low Barrier Schottky Chip M/A-COM Products Rev. V7 Features • Low IR <100nA @ 1V, <500nA @ 3V • Designed for High Volume, Low Cost Detector and Mixer Applications • Low Noise Figure: 5.7 dB (SSB) at X-Band • High Detector Sensitivity: -55 dBm TSS	Original	MA4E2054L-1261 100nA 500nA MA4E2054 MA4E2054L-1261	PDF
Untitled Abstract: No abstract text available Text: MA4E2054L-1261 Low Barrier Schottky Chip M/A-COM Products Rev. V7 Features • Low IR <100nA @ 1V, <500nA @ 3V • Designed for High Volume, Low Cost Detector and Mixer Applications • Low Noise Figure: 5.7 dB (SSB) at X-Band • High Detector Sensitivity: -55 dBm TSS	Original	MA4E2054L-1261 100nA 500nA MA4E2054 MA4E2054L-1261	PDF
500 platinum Hot wire Abstract: MA4E2513L-1289 MA4E2513L-1289W MACOM Schottky Diode Text: MA4E2513L-1289 SURMOUNTTM Low Barrier Tee “0301” Footprint Silicon Schottky Diodes Features • Extremely Low Parasitic Capitance and Inductance • Extremely Small “0301” 1000 x 300 um Footprint • Surface Mountable in Microwave Circuits, No Wire•	Original	MA4E2513L-1289 MA4E2513L-1289 500 platinum Hot wire MA4E2513L-1289W MACOM Schottky Diode	PDF
diode L44 Abstract: Surface Mount RF Schottky Barrier Diodes Text: r M a n A M P ic om pany Surface Mount Low Barrier X-Band Schottky Diodes MA4E2054 Series V3.00 Features • Low I R clOOnA @ IV, <500nA @ 3Y • Designed for High Volume, Low Cost Detector and Mixer Applications • Low Noise Figure: 5.7 dB (SSB) at X-Band	OCR Scan	500nA MA4E2054 MA4E2054A-287T MA4E2054C-287T diode L44 Surface Mount RF Schottky Barrier Diodes	PDF
sot 14L Abstract: sot-23 ma4 Text: V an A M P com pany < Surface Mount Low Barrier X-Band Schottky Diodes MA4E2054 Series V3.00 Features • Low IR <100nA @ IV, <500nA @ 3 V • Designed for High Volume, Low Cost Detector and Mixer Applications • Low Noise Figure: 5.7 dB (SSB) at X-Band	OCR Scan	100nA 500nA MA4E2054 MA4E2054A-287T MA4E2054C-287T sot 14L sot-23 ma4	PDF