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    SCHOTTKY DIODE MACOM SPICE MODEL Search Results

    SCHOTTKY DIODE MACOM SPICE MODEL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUHS20S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS20F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    SCHOTTKY DIODE MACOM SPICE MODEL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    65rj

    Abstract: No abstract text available
    Text: MA4E2502 Series SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes Features • Extremely Low Parasitic Capitance and Inductance • Surface Mountable in Microwavable Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide


    Original     		PDF MA4E2502 65rj

    Untitled

    Abstract: No abstract text available
    Text: MA4E2502 Series SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes Features • Extremely Low Parasitic Capitance and Inductance • Surface Mountable in Microwavable Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide


    Original     		PDF MA4E2502

    schottky diode MACOM SPICE model

    Abstract: schottky diode MACOM SPICE model Cjpar MA4E2502L-1246 Advanced Schottky Family
    Text: MA4E2502 Series SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes Features • Extremely Low Parasitic Capitance and Inductance • Surface Mountable in Microwavable Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide


    Original     		PDF MA4E2502 schottky diode MACOM SPICE model schottky diode MACOM SPICE model Cjpar MA4E2502L-1246 Advanced Schottky Family

    MA4E2502

    Abstract: MA4E2508 MA4E2508H MA4E2508L MA4E2508L-1112 MA4E2508L-1112T MA4E2508L-1112W MA4E2508M MA4E2508M-1112 Schottky diode wafer
    Text: MA4E2508 Series SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair Features M/A-COM Products Rev. V3 Case Style 1112 • Extremely Low Parasitic Capitance & Inductance • Surface Mountable in Microwave Circuits, No Wirebonds Required


    Original     		PDF MA4E2508 MA4E2502 MA4E2508H MA4E2508L MA4E2508L-1112 MA4E2508L-1112T MA4E2508L-1112W MA4E2508M MA4E2508M-1112 Schottky diode wafer

    schottky diode MACOM SPICE model Cjpar

    Abstract: MACOM Schottky Diode
    Text: MA4E2508 Series SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair Features M/A-COM Products Rev. V3 Case Style 1112 • Extremely Low Parasitic Capitance & Inductance • Surface Mountable in Microwave Circuits, No Wirebonds Required


    Original     		PDF MA4E2508 schottky diode MACOM SPICE model Cjpar MACOM Schottky Diode

    schottky diode MACOM SPICE model Cjpar

    Abstract: No abstract text available
    Text: MA4E2532L-1113, MA4E2532M-1113 SURMOUNTTM Low & Medium Barrier Silicon Schottky Diodes: Ring Quad Series Features M/A-COM Products Rev. V3 Case Style 1113 • Extremely Low Parasitic Capacitance and Inductance • Surface Mountable in Microwave Circuits, No


    Original     		PDF MA4E2532L-1113, MA4E2532M-1113 MA4E2532-1113 schottky diode MACOM SPICE model Cjpar

    low barrier schottky

    Abstract: MA4E2502 MA4E2532L-1113 MA4E2532L-1113T MA4E2532L-1113W MA4E2532M-1113 macom
    Text: MA4E2532L-1113, MA4E2532M-1113 SURMOUNTTM Low & Medium Barrier Silicon Schottky Diodes: Ring Quad Series Features M/A-COM Products Rev. V3 Case Style 1113 • Extremely Low Parasitic Capacitance and Inductance • Surface Mountable in Microwave Circuits, No


    Original     		PDF MA4E2532L-1113, MA4E2532M-1113 MA4E2532-1113 low barrier schottky MA4E2502 MA4E2532L-1113 MA4E2532L-1113T MA4E2532L-1113W MA4E2532M-1113 macom

    MA4E2054D-287

    Abstract: No abstract text available
    Text: MA4E2054 Series Surface Mount Low Barrier Schottky Diode M/A-COM Products Rev. V7 Features • Low IR <100nA @ 1V, <500nA @ 3V • Designed for High Volume, Low Cost Detector and Mixer Applications • High Detector Sensitivity: -55 dBm TSS • Low Capacitance: 0.30 pF


    Original     		PDF MA4E2054 100nA 500nA OT-23 OT-143 OT-323 OD-323 MA4E2054D-287

    900 mhz schottky diode

    Abstract: No abstract text available
    Text: MA4E2054 Series Surface Mount Low Barrier Schottky Diode M/A-COM Products Rev. V7 Features • Low IR <100nA @ 1V, <500nA @ 3V • Designed for High Volume, Low Cost Detector and Mixer Applications • High Detector Sensitivity: -55 dBm TSS • Low Capacitance: 0.30 pF


    Original     		PDF MA4E2054 100nA 500nA OT-23 OT-143 OT-323 OD-323 900 mhz schottky diode

    Untitled

    Abstract: No abstract text available
    Text: MA4E2054L-1261 Low Barrier Schottky Chip M/A-COM Products Rev. V7 Features • Low IR <100nA @ 1V, <500nA @ 3V • Designed for High Volume, Low Cost Detector and Mixer Applications • Low Noise Figure: 5.7 dB (SSB) at X-Band • High Detector Sensitivity: -55 dBm TSS


    Original     		PDF MA4E2054L-1261 100nA 500nA MA4E2054 MA4E2054L-1261

    Untitled

    Abstract: No abstract text available
    Text: MA4E2054L-1261 Low Barrier Schottky Chip M/A-COM Products Rev. V7 Features • Low IR <100nA @ 1V, <500nA @ 3V • Designed for High Volume, Low Cost Detector and Mixer Applications • Low Noise Figure: 5.7 dB (SSB) at X-Band • High Detector Sensitivity: -55 dBm TSS


    Original     		PDF MA4E2054L-1261 100nA 500nA MA4E2054 MA4E2054L-1261

    500 platinum Hot wire

    Abstract: MA4E2513L-1289 MA4E2513L-1289W MACOM Schottky Diode
    Text: MA4E2513L-1289 SURMOUNTTM Low Barrier Tee “0301” Footprint Silicon Schottky Diodes Features • Extremely Low Parasitic Capitance and Inductance • Extremely Small “0301” 1000 x 300 um Footprint • Surface Mountable in Microwave Circuits, No Wire•


    Original     		PDF MA4E2513L-1289 MA4E2513L-1289 500 platinum Hot wire MA4E2513L-1289W MACOM Schottky Diode

    diode L44

    Abstract: Surface Mount RF Schottky Barrier Diodes
    Text: r M a n A M P ic om pany Surface Mount Low Barrier X-Band Schottky Diodes MA4E2054 Series V3.00 Features • Low I R clOOnA @ IV, <500nA @ 3Y • Designed for High Volume, Low Cost Detector and Mixer Applications • Low Noise Figure: 5.7 dB (SSB) at X-Band


    OCR Scan     		PDF 500nA MA4E2054 MA4E2054A-287T MA4E2054C-287T diode L44 Surface Mount RF Schottky Barrier Diodes

    sot 14L

    Abstract: sot-23 ma4
    Text: V an A M P com pany < Surface Mount Low Barrier X-Band Schottky Diodes MA4E2054 Series V3.00 Features • Low IR <100nA @ IV, <500nA @ 3 V • Designed for High Volume, Low Cost Detector and Mixer Applications • Low Noise Figure: 5.7 dB (SSB) at X-Band


    OCR Scan     		PDF 100nA 500nA MA4E2054 MA4E2054A-287T MA4E2054C-287T sot 14L sot-23 ma4