Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SCHOTTKY DIODE MACOM SPICE MODEL CJPAR Search Results

    SCHOTTKY DIODE MACOM SPICE MODEL CJPAR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUHS20S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS20F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    SCHOTTKY DIODE MACOM SPICE MODEL CJPAR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    65rj

    Abstract: No abstract text available
    Text: MA4E2502 Series SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes Features • Extremely Low Parasitic Capitance and Inductance • Surface Mountable in Microwavable Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide


    Original     		PDF MA4E2502 65rj

    Untitled

    Abstract: No abstract text available
    Text: MA4E2502 Series SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes Features • Extremely Low Parasitic Capitance and Inductance • Surface Mountable in Microwavable Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide


    Original     		PDF MA4E2502

    schottky diode MACOM SPICE model

    Abstract: schottky diode MACOM SPICE model Cjpar MA4E2502L-1246 Advanced Schottky Family
    Text: MA4E2502 Series SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes Features • Extremely Low Parasitic Capitance and Inductance • Surface Mountable in Microwavable Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide


    Original     		PDF MA4E2502 schottky diode MACOM SPICE model schottky diode MACOM SPICE model Cjpar MA4E2502L-1246 Advanced Schottky Family

    MA4E2502

    Abstract: MA4E2508 MA4E2508H MA4E2508L MA4E2508L-1112 MA4E2508L-1112T MA4E2508L-1112W MA4E2508M MA4E2508M-1112 Schottky diode wafer
    Text: MA4E2508 Series SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair Features M/A-COM Products Rev. V3 Case Style 1112 • Extremely Low Parasitic Capitance & Inductance • Surface Mountable in Microwave Circuits, No Wirebonds Required


    Original     		PDF MA4E2508 MA4E2502 MA4E2508H MA4E2508L MA4E2508L-1112 MA4E2508L-1112T MA4E2508L-1112W MA4E2508M MA4E2508M-1112 Schottky diode wafer

    schottky diode MACOM SPICE model Cjpar

    Abstract: MACOM Schottky Diode
    Text: MA4E2508 Series SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair Features M/A-COM Products Rev. V3 Case Style 1112 • Extremely Low Parasitic Capitance & Inductance • Surface Mountable in Microwave Circuits, No Wirebonds Required


    Original     		PDF MA4E2508 schottky diode MACOM SPICE model Cjpar MACOM Schottky Diode

    low barrier schottky

    Abstract: MA4E2502 MA4E2532L-1113 MA4E2532L-1113T MA4E2532L-1113W MA4E2532M-1113 macom
    Text: MA4E2532L-1113, MA4E2532M-1113 SURMOUNTTM Low & Medium Barrier Silicon Schottky Diodes: Ring Quad Series Features M/A-COM Products Rev. V3 Case Style 1113 • Extremely Low Parasitic Capacitance and Inductance • Surface Mountable in Microwave Circuits, No


    Original     		PDF MA4E2532L-1113, MA4E2532M-1113 MA4E2532-1113 low barrier schottky MA4E2502 MA4E2532L-1113 MA4E2532L-1113T MA4E2532L-1113W MA4E2532M-1113 macom

    schottky diode MACOM SPICE model Cjpar

    Abstract: No abstract text available
    Text: MA4E2532L-1113, MA4E2532M-1113 SURMOUNTTM Low & Medium Barrier Silicon Schottky Diodes: Ring Quad Series Features M/A-COM Products Rev. V3 Case Style 1113 • Extremely Low Parasitic Capacitance and Inductance • Surface Mountable in Microwave Circuits, No


    Original     		PDF MA4E2532L-1113, MA4E2532M-1113 MA4E2532-1113 schottky diode MACOM SPICE model Cjpar

    500 platinum Hot wire

    Abstract: MA4E2513L-1289 MA4E2513L-1289W MACOM Schottky Diode
    Text: MA4E2513L-1289 SURMOUNTTM Low Barrier Tee “0301” Footprint Silicon Schottky Diodes Features • Extremely Low Parasitic Capitance and Inductance • Extremely Small “0301” 1000 x 300 um Footprint • Surface Mountable in Microwave Circuits, No Wire•


    Original     		PDF MA4E2513L-1289 MA4E2513L-1289 500 platinum Hot wire MA4E2513L-1289W MACOM Schottky Diode