L 9101
Abstract: ups 700 HSCH-9201 HSCH-9251 VF10 HSCH-9101 Avago Technologies Schottky HSCH9201
Text: HSCH-9101/9201/9251 GaAs Beam Lead Schottky Barrier Diodes Data Sheet Description The HSCH-9101 single, the HSCH-9201 series pair, and the HSCH-9251 anti-parallel pair are advanced gallium arsenide Schottky barrier diodes. These devices are fabricated utilizing molecular beam epitaxy MBE
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HSCH-9101/9201/9251
HSCH-9101
HSCH-9201
HSCH-9251
HSCH-9201
5965-8851E
5988-1897EN
L 9101
ups 700
VF10
Avago Technologies Schottky
HSCH9201
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MA4E2508L-1112
Abstract: MA4E2502 MA4E2508 MA4E2508H MA4E2508L MA4E2508L-1112T MA4E2508L-1112W MA4E2508M MA4E2508H-1112
Text: SURMOUNTTM Low and Medium & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair Features • Extremely Low Parasitic Capitance and Inductance • Surface Mountable in Microwave Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide
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MA4E2508
MA4E2508M
MA4E2508H
MA4E2508L-1112
MA4E2502
MA4E2508H
MA4E2508L
MA4E2508L-1112T
MA4E2508L-1112W
MA4E2508M
MA4E2508H-1112
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PDF
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J-STD-20C
Abstract: SMGS21 STD-20C SMSG21 J-STD-20-C A 0503
Text: SMGS21 GaAs Schottky Diodes 1 1 2 2 PIN FUNCTION 1 ANODE 2 CATHODE 0503 Molded Plastic DFN Package Description Features The SMGS21 is a GaAs Schottky diode in a molded plastic DFN package. It is designed for broadband doubler and harmonic mixer. It is in anti-parallel pair
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SMGS21
SMGS21
A17107
J-STD-20C
STD-20C
SMSG21
J-STD-20-C
A 0503
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PDF
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Untitled
Abstract: No abstract text available
Text: SMGS21 GaAs Schottky Diodes 1 1 2 2 PIN FUNCTION 1 ANODE 2 CATHODE 0503 Molded Plastic DFN Package Description Features The SMGS21 is a GaAs Schottky diode in a molded plastic DFN package. It is designed for broadband doubler and harmonic mixer. It is in anti-parallel pair
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SMGS21
SMGS21
A17107
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PDF
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schottky diode MACOM SPICE model Cjpar
Abstract: MACOM Schottky Diode
Text: MA4E2508 Series SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair Features M/A-COM Products Rev. V3 Case Style 1112 • Extremely Low Parasitic Capitance & Inductance • Surface Mountable in Microwave Circuits, No Wirebonds Required
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MA4E2508
schottky diode MACOM SPICE model Cjpar
MACOM Schottky Diode
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Untitled
Abstract: No abstract text available
Text: MA4E2508 Series SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair Features M/A-COM Products Rev. V3 Case Style 1112 • Extremely Low Parasitic Capitance & Inductance • Surface Mountable in Microwave Circuits, No Wirebonds Required
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MA4E2508
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PDF
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MA4E2502
Abstract: MA4E2508 MA4E2508H MA4E2508L MA4E2508L-1112 MA4E2508L-1112T MA4E2508L-1112W MA4E2508M MA4E2508M-1112 Schottky diode wafer
Text: MA4E2508 Series SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair Features M/A-COM Products Rev. V3 Case Style 1112 • Extremely Low Parasitic Capitance & Inductance • Surface Mountable in Microwave Circuits, No Wirebonds Required
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MA4E2508
MA4E2502
MA4E2508H
MA4E2508L
MA4E2508L-1112
MA4E2508L-1112T
MA4E2508L-1112W
MA4E2508M
MA4E2508M-1112
Schottky diode wafer
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PDF
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Ablebond 8380
Abstract: Ablestick 8380 VCT-20 w625c
Text: GaAs Flip Chip Schottky Diodes DMK2790-000, DMK2308-000, DMK8001-000 Features Single - DMK2790-000 • Designed for High Volume Designs ■ High Frequency 20–100 GHz ■ Exceeds Environmental Requirements for MIC & Hybrid Applications Anti-Parallel - DMK2308-000
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DMK2790-000,
DMK2308-000,
DMK8001-000
DMK2308-000
DMK2790-000
8/99A
Ablebond 8380
Ablestick 8380
VCT-20
w625c
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PDF
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soft solder die bonder
Abstract: No abstract text available
Text: MA4E2508 Series SURMOUNTTM Low & Medium Barrier Silicon Schottky Diodes: Anti-Parallel Pair Features V 1.00 Case Style 1112 Extremely Low Parasitic Capitance and Inductance Surface Mountable in Microwave Circuits, No Wirebonds Required n Rugged HMIC Construction with Polyimide Scratch
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MA4E2508
MA4E2508L
MA4E2508M
soft solder die bonder
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PDF
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MA4E2508L-1112
Abstract: MA4E2502 MA4E2508L-1112T MA4E2508L-1112W
Text: MA4E2508L-1112 SURMOUNTTM Low Barrier Silicon Schottky Diodes: Anti-Parallel Pair V 1.00 Case Style 1112 Features A Extremely Low Parasitic Capitance and Inductance Surface Mountable in Microwave Circuits, No Wirebonds Required n Rugged HMIC Construction with Polyimide Scratch
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MA4E2508L-1112
MA4E2508L-1112
MA4E2502
MA4E2508L-1112T
MA4E2508L-1112W
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PDF
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Ablebond 8380
Abstract: Ablestick 8380 DMK2308-000 DMK2783-000 DMK2790-000 DMK8001-000 B183
Text: GaAs Flip Chip Schottky Diodes Features Single - DMK2783-000, DMK2790-000 • Designed for High Volume Designs ■ High Frequency 20–100 GHz ■ Exceeds Environmental Requirements for MIC & Hybrid Applications Anti-Parallel - DMK2308-000 ■ Designed for Low Junction Capacitance
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DMK2783-000,
DMK2790-000
DMK2308-000
DMK8001-000
leadle005
3/00A
Ablebond 8380
Ablestick 8380
DMK2308-000
DMK2783-000
DMK2790-000
DMK8001-000
B183
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PDF
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Ablebond 8380
Abstract: Ablestick 8380 DMK2308-000 DMK2783-000 DMK2790-000 DMK8001-000 diodes in mil grade
Text: GaAs Flip Chip Schottky Diodes Features Single - DMK2783-000, DMK2790-000 • Designed for High Volume Designs ■ High Frequency 20–100 GHz ■ Exceeds Environmental Requirements for MIC & Hybrid Applications Anti-Parallel - DMK2308-000 ■ Designed for Low Junction Capacitance
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DMK2783-000,
DMK2790-000
DMK2308-000
DMK8001-000
12/02A
Ablebond 8380
Ablestick 8380
DMK2308-000
DMK2783-000
DMK2790-000
DMK8001-000
diodes in mil grade
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PDF
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Ablebond 8380
Abstract: No abstract text available
Text: GaAs Flip Chip Schottky Diodes Features Single - DMK2783-000, DMK2790-000 • Designed for High Volume Designs ■ High Frequency 20–100 GHz ■ Exceeds Environmental Requirements for MIC & Hybrid Applications Anti-Parallel - DMK2308-000 ■ Designed for Low Junction Capacitance
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DMK8001-000
DMK2308-000
DMK2783-000,
DMK2790-000
3/00A
Ablebond 8380
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PDF
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MA4E2037
Abstract: MA4E2039 M541 MA4E2040
Text: MA4E2037, MA4E2039,MA4E2040 GaAs Beam Lead Schottky Diodes Features • • • • • Low Series Resistance Low Capacitance High Cut-Off Frequency Silicon Nitride Passivation Multiple Configurations Rev. V2 MA4E2037 Description and Applications M/A-Com’s MA4E2037 single, MA4E2039 anti-parallel
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MA4E2037,
MA4E2039
MA4E2040
MA4E2037
MA4E2037
MA4E2040
M541
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Untitled
Abstract: No abstract text available
Text: GaAs Schottky Diodes Flip Chip Anti Parallel Low CT TM MS8251 – P2920 Dimensions Size: 26 x 13 mils Thickness: 5 mils Bond Pad Size: 5 x 8 mils Features Capacitance 45 fF Typ. Low Series Resistance (7 Typ.) Cut-Off Frequency > 500 GHz Description
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MS8251
P2920
MS8251-P2920
x10-13
MS8251
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APT2X100S20J
Abstract: APT2X101S20J H100 100C1600
Text: 2 3 2 2 3 1 1 4 1 3 SO 4 Anti-Parallel Parallel APT2X100S20J APT2X101S20J 27 2 T- 4 APT2X100S20J 200V 100A APT2X101S20J 200V 100A DUAL DIE ISOTOP PACKAGE HIGH VOLTAGE SCHOTTKY DIODES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Rectifiers in Switchmode Power
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APT2X100S20J
APT2X101S20J
APT2X100S20J
APT2X101S20J
OT-227
H100
100C1600
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Untitled
Abstract: No abstract text available
Text: 2 3 2 2 3 1 1 4 1 3 27 2 T- 4 SO 4 Anti-Parallel Parallel APT2X60S20J APT2X61S20J APT2X60S20J APT2X61S20J 200V 200V 60A 60A DUAL DIE ISOTOP PACKAGE HIGH VOLTAGE SCHOTTKY DIODES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode • Ultrafast Recovery Times
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APT2X60S20J
APT2X61S20J
APT2X60S20J
OT-227
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MS8250
Abstract: P2613
Text: GaAs Schottky Diodes Flip Chip Anti Parallel Low RS TM MS8250 – P2920 Dimensions Size: 26 x 13 mils Thickness: 5 mils Bond Pad Size: 5 x 8 mils Features ● Capacitance 65 fF Typ. ● Low Series Resistance (3 Typ.) ● Cut-Off Frequency > 500 GHz
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MS8250
P2920
MS8250
x10-13
P2613
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1100nC
Abstract: APT20M36BLL APT2X60S20J APT2X61S20J H100
Text: 2 3 2 2 3 3 1 1 4 1 SO 4 Anti-Parallel Parallel APT2X60S20J APT2X61S20J 27 2 T- 4 APT2X61S20J APT2X60S20J 200V 200V 75A 75A DUAL DIE ISOTOP PACKAGE HIGH VOLTAGE SCHOTTKY DIODES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode • Ultrafast Recovery Times
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APT2X61S20J
APT2X60S20J
OT-227
1100nC
APT20M36BLL
APT2X60S20J
APT2X61S20J
H100
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PDF
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MS8251
Abstract: P2613 schottky diodes Anti parallel P261
Text: GaAs Schottky Diodes TM Flip Chip Anti Parallel Low CT MS8251 – P2920 Dimensions Size: 26 x 13 mils Thickness: 5 mils Bond Pad Size: 5 x 8 mils Features ● Capacitance 45 fF Typ. ● Low Series Resistance (7 Typ.) ● Cut-Off Frequency > 500 GHz
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MS8251
P2920
MS8251-P2920
x10-13
MS8251
P2613
schottky diodes Anti parallel
P261
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PDF
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Untitled
Abstract: No abstract text available
Text: 2 3 2 2 3 1 1 4 1 3 27 2 T- 4 SO 4 Anti-Parallel Parallel APT2X30S20J APT2X31S20J APT2X30S20J APT2X31S20J 200V 200V 30A 30A DUAL DIE ISOTOP PACKAGE HIGH VOLTAGE SCHOTTKY DIODES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode • Ultrafast Recovery Times
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APT2X30S20J
APT2X31S20J
APT2X30S20J
OT-227
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PDF
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APT20M36BLL
Abstract: APT2X30S20J APT2X31S20J H100
Text: 2 3 2 2 3 3 1 1 4 1 SO 4 Anti-Parallel Parallel APT2X30S20J APT2X31S20J 27 2 T- 4 APT2X31S20J APT2X30S20J 200V 200V 45A 45A DUAL DIE ISOTOP PACKAGE HIGH VOLTAGE SCHOTTKY DIODES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode • Ultrafast Recovery Times
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APT2X31S20J
APT2X30S20J
OT-227
APT20M36BLL
APT2X30S20J
APT2X31S20J
H100
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PDF
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Untitled
Abstract: No abstract text available
Text: GaAs Schottky Diodes Flip Chip Anti Parallel Low RS TM MS8250 – P2920 Dimensions Size: 26 x 13 mils Thickness: 5 mils Bond Pad Size: 5 x 8 mils Features Capacitance 65 fF Typ. Low Series Resistance (3 Typ.) Cut-Off Frequency > 500 GHz Large Gold Bond Pads
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MS8250
P2920
MS8250
device584
x10-13
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PDF
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MA40420
Abstract: mixer 8-12 GHZ schottky diodes Anti parallel MA40410
Text: MA40401/MA40422 Series GaAs Schottky Mixer Diodes Features • VERY LOW NOISE FIGURE X, W-BAND ■ LOW JUNCTION CAPACITANCE ■ LOW SERIES RESISTANCE ■ WIDE RANGE OF AVAILABLE PRODUCT PACKAGED DIODES CHIPS BEAM LEADS ANTI-PARALLEL BEAM LEADS BRIDGE QUADS
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OCR Scan
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MA40401/MA40422
MA40401-40412
MA40413
MA-40400
MA40400
MA40420
mixer 8-12 GHZ
schottky diodes Anti parallel
MA40410
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