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    SCHOTTKY TRANSISTOR SPICE Search Results

    SCHOTTKY TRANSISTOR SPICE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUHS20S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS20F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    SCHOTTKY TRANSISTOR SPICE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR SMD MARKING CODE MV DIODE

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT223 PZTM1101 Transistor Catalog
    Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D087 PZTM1101 NPN transistor/Schottky-diode module Product specification 1996 May 09 Philips Semiconductors Product specification NPN transistor/Schottky-diode module PZTM1101 FEATURES DESCRIPTION • Low output capacitance


    Original     		PDF M3D087 PZTM1101 PZTM1101 OT223 PZTM1102. TM1101. MAM236 TRANSISTOR SMD MARKING CODE MV DIODE TRANSISTOR SMD CODE PACKAGE SOT223 Transistor Catalog

    Untitled

    Abstract: No abstract text available
    Text: GA20SICP12-247 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier


    Original     		PDF GA20SICP12-247 O-247AB 0SICP12 GA20SICP12 833E-48 073E-26 752E-12 01E-09 50E-03

    Untitled

    Abstract: No abstract text available
    Text: GA100SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier


    Original     		PDF GA100SICP12-227 833E-48 073E-26 398E-9 026E-09 0E-03 GA100SIPC12 99E-16 3E-05 86E-09

    Untitled

    Abstract: No abstract text available
    Text: GA10SICP12-247 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier


    Original     		PDF GA10SICP12-247 O-247AB 427E-12 1373E-12 0E-03 GA10SICP12 55E-15 71739E-05 40E-10 00E-10

    Untitled

    Abstract: No abstract text available
    Text: GA50SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier


    Original     		PDF GA50SICP12-227 OT-227 833E-48 073E-26 398E-9 026E-09 0E-03 GA50SIPC12 99E-16 3E-05

    Untitled

    Abstract: No abstract text available
    Text: GA10SICP12-263 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier


    Original     		PDF GA10SICP12-263 O-263-7L) 427E-12 1373E-12 0E-03 GA10SICP12 55E-15 71739E-05 40E-10 00E-10

    Untitled

    Abstract: No abstract text available
    Text: GA100JT12-227 Normally – OFF Silicon Carbide Junction Transistor Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier


    Original     		PDF GA100JT12-227 OT-227 GA100JT12-227 GA100JT12 833E-48 073E-26 398E-9

    M0607

    Abstract: transistor schottky model spice
    Text: DMT9FK01 Reference Spice Parameter Total pages page 1 1 Device symbol 4 5 Product name: DMT9FK01 Product type: Transistor with Built-in Resistor PNP + Schottky Barrier Diode C B Tr E R1 R2 1 2 3 Parameters *$ .SUBCKT DMT9FK01 1 2 3 4 5 D1 1 5 SBD R_R1 2 IN 47k


    Original     		PDF DMT9FK01 DMT9FK01 691E-9 732E-3 97E-12 4858E-9 00E-6 00E-12 000E-15 M0607 transistor schottky model spice

    Untitled

    Abstract: No abstract text available
    Text: GA100SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA100SICP12-227 OT-227 ReSIPC12 GA100SIPC12 00E-47 26E-28 75E-09 57E-09 00E-03

    Untitled

    Abstract: No abstract text available
    Text: GA20SICP12-263 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA20SICP12-263 O-263 SIPC12 GA20SIPC12 00E-47 26E-28 98E-10 22E-09 00E-03

    Untitled

    Abstract: No abstract text available
    Text: GA50SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA50SICP12-227 OT-227 Redu50SIPC12 GA50SIPC12 00E-47 26E-28 75E-09 57E-09 00E-03

    Untitled

    Abstract: No abstract text available
    Text: GA10SICP12-247 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA10SICP12-247 O-247AB GA10SIPC12 00E-47 26E-28 5E-10 11E-09 00E-03

    transistor schottky model spice

    Abstract: No abstract text available
    Text: GA20SICP12-263 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA20SICP12-263 O-263 GA20SIPC12 00E-47 26E-28 50E-03 98E-10 22E-09 transistor schottky model spice

    Untitled

    Abstract: No abstract text available
    Text: GA10SICP12-247 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA10SICP12-247 O-247AB GA10SIPC12 00E-47 26E-28 5E-10 11E-09 00E-03

    Untitled

    Abstract: No abstract text available
    Text: GA100SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA100SICP12-227 OT-227 Reduc00SIPC12 GA100SIPC12 00E-47 26E-28 75E-09 57E-09 00E-03

    Untitled

    Abstract: No abstract text available
    Text: GA20SICP12-263 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack VDS RDS ON ID (Tc = 25°C) ID (Tc = 145°C) hFE (Tc = 25°C) Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch


    Original     		PDF GA20SICP12-263 O-263-7L) Applicatio0SICP12 GA20SICP12 833E-48 073E-26 752E-12 01E-09 50E-03

    kf 203 transistor

    Abstract: 1E06H MOSFET and parallel Schottky diode n mosfet pspice parameters pspice model TOTEM POLE transistor schottky model spice PIN diode Pspice model delta rectifier all model Lambda Pulse Modulator pspice model gate driver
    Text: AN1631/D Using PSPICE to Analyze Performance of Power MOSFETs in Step−Down, Switching Regulators Employing Synchronous Rectification http://onsemi.com APPLICATION NOTE Prepared by: Rick Honda and Scott Deuty INTRODUCTION This paper will describe an easy method to analyze


    Original     		PDF AN1631/D AN1520/D. r14525 kf 203 transistor 1E06H MOSFET and parallel Schottky diode n mosfet pspice parameters pspice model TOTEM POLE transistor schottky model spice PIN diode Pspice model delta rectifier all model Lambda Pulse Modulator pspice model gate driver

    schottky DIODE MOTOROLA B14

    Abstract: schottky DIODE MOTOROLA B12 kf 203 transistor MBR140 equivalent motorola power transistor 7752 DIODE MOTOROLA B14 pspice model TOTEM POLE Motorola transistors 7752 DIODE MOTOROLA B13 pspice model gate driver
    Text: MOTOROLA Order this document by AN1631/D SEMICONDUCTOR APPLICATION NOTE AN1631 Using PSPICE to Analyze Performance of Power MOSFETs in Step-Down, Switching Regulators Employing Synchronous Rectification Prepared by: Rick Honda and Scott Deuty Motorola, Inc.


    Original     		PDF AN1631/D AN1631 AN1520. schottky DIODE MOTOROLA B14 schottky DIODE MOTOROLA B12 kf 203 transistor MBR140 equivalent motorola power transistor 7752 DIODE MOTOROLA B14 pspice model TOTEM POLE Motorola transistors 7752 DIODE MOTOROLA B13 pspice model gate driver

    transistor M-226

    Abstract: CPH6701
    Text: CPH6701 SPICE PARAMETER PNP SMALL-SIGNAL TRANSISTOR model : Gummel-Poon Value Parameter 520 f IS 420.0 BF 0.99 NF 7.5 VAF 1 IKF 13.4 f ISE 1.9 NE 100.40 BR 1.00 NR 5 VAR 273.9m IKR Unit A V A A V A Parameter ISC NC RB IRB RBM RE RC XTB XTI EG Value 651 f 1.10


    Original     		PDF CPH6701 27deg transistor M-226 CPH6701

    CPH5705

    Abstract: transistor BF 235
    Text: CPH5705 SPICE PARAMETER PNP SMALL-SIGNAL TRANSISTOR model : Gummel-Poon Value Parameter 512.6 f IS 390.0 BF 0.994 NF VAF 13.0 IKF 1.086 10.8 f ISE 2.499 NE 5.00 BR 1.00 NR 20.8 VAR 100.9 m IKR Unit A V A A V A Parameter ISC NC RB IRB RBM RE RC XTB XTI EG Value


    Original     		PDF CPH5705 27deg CPH5705 transistor BF 235

    CPH6702

    Abstract: transistor BF 235
    Text: CPH6702 SPICE PARAMETER PNP SMALL-SIGNAL TRANSISTOR model : Gummel-Poon Value Parameter 166.7f IS 270.0 BF 1.01 NF 8.9 VAF 176.9 IKF 1.0 f ISE 2.35 NE 117.20 BR 1.00 NR 30.8 VAR 150 IKR Unit A V A A V A Parameter ISC NC RB IRB RBM RE RC XTB XTI EG Value 0.80f


    Original     		PDF CPH6702 27deg 2003BR CPH6702 transistor BF 235

    transistor schottky model spice

    Abstract: No abstract text available
    Text: V T C INC IDE D l^ a a ^ S T O VJ800 “ 0001Ö0S 0 T-H2-21 ANALOG MASTER CHIP FAMILY USER S G U ID E Release 2.2 CONTENTS 1. INTRODUCTION 1.1 Preface. 2-5 1.2 Bipolar-CMOS Comparison. 2-5


    OCR Scan     		PDF VJ800 T-H2-21 transistor schottky model spice

    schematic diagram 48 volt UPS

    Abstract: 12 volt zener diode on pspice 74 Series IC Manual TM3J pnp npn dual emitter connected 750 ohm resistor pnp high emitter base voltage 15 volt design manual transistor schottky model spice 7.5 volt zener diode on pspice
    Text: MfiE D E C I SEMICONDUCTOR • ECi 3QSfl7ti7 Q D O D D b S 073 * E C I S 7 ^ i - 3 FEATURES • All devices use an advanced, small geom etry process resulting in sm aller chip size, increased complexity, and higher frequency (ft 800MHz . All devices operate from 1 to 20 volts despite th eir sm aller size.


    OCR Scan     		PDF 800MHz) schematic diagram 48 volt UPS 12 volt zener diode on pspice 74 Series IC Manual TM3J pnp npn dual emitter connected 750 ohm resistor pnp high emitter base voltage 15 volt design manual transistor schottky model spice 7.5 volt zener diode on pspice

    transistor schottky model spice

    Abstract: SPICE thyristor model 7 segment SPICE Device Model
    Text: V T ID E C IN C 3 D 11386151 O M lfllD VJ900 ANALOG MASTER CHIP FAMILY T .i/2 -2 1 USER'S G UIDE Release 2.0 CONTENTS 1. INTRO DUC TIO N 1.1 Preface. 3-5 1.2 Bipolar-CMOS Comparison. 3-5


    OCR Scan     		PDF VJ900 VJ900 D0011L3 T-42-21 transistor schottky model spice SPICE thyristor model 7 segment SPICE Device Model