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    SD 347 TRANSISTOR Search Results

    SD 347 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SD 347 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SD 347 transistor

    Abstract: BUZ 1025 SD 347
    Text: SIEMENS BUZ 347 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 347 Vbs 50 V fa ^DSfon Package Ordering Code 45 A 0.03 f l TO-218AA C67078-S3115-A2 Maximum Ratings Parameter Symbol Values Continuous drain current


    OCR Scan     		PDF O-218AA C67078-S3115-A2 O-218AA SD 347 transistor BUZ 1025 SD 347

    SD 347 transistor

    Abstract: No abstract text available
    Text: SIEMENS SIPMOS Power Transistor BUZ 347 • N channel • Enhancement mode • Avalanche-rated Type BUZ 347 50V A ^DS on) Package 1) O rdering Code 45A 0.03 Q TO-218 AA C67078-S3115-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current, Tc = 28 "C


    OCR Scan     		PDF O-218 C67078-S3115-A2 SD 347 transistor

    SD 347

    Abstract: No abstract text available
    Text: SIEMENS SIPMOS Power MOS Transistors BUZ 15 BUZ 347 = 50 V ^DS = 45 A b 0.03 Q ^DS on • N channel • E nhancem ent mode • A valanche-proof • Packages: T O -2 04 A E (TO-3), TO -2 18 A A (T O P -3)’ ) Type Ordering code BUZ 15 C 6 70 78-A 100 1 -A2


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    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 347 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs BUZ 347 50 V h 45 A ^bs on Package Ordering Code 0.03 n TO-218AA C67078-S31 15-A2 Maximum Ratings Parameter Symbol Continuous drain current


    OCR Scan     		PDF O-218AA C67078-S31 15-A2 fl23SbOS

    sd 347

    Abstract: VEB mikroelektronik Transistoren DDR sd 346 Funkamateur FUNKAMATEUR-Bauelementeinformation SD349 telefunken transistoren MIKROELEKTRONIK ERFURT aktive elektronische bauelemente ddr
    Text: FUNKAMATEUR-Bauelementeinformation Silizium-npn- und -pnp-Leistungstransistoren in Epitaxie-Planar-Technologie A pplikationsschaltungen T G L 39125 H ersteller: V E B M ik ro e le k tro n ik „ A n n a S e g h e r s " N e u h a u s Kurzcharakteristik Grenzwerte im Betriebstemperaturbereich


    OCR Scan     		PDF Anzugsmomentvon50. 80Ncm sd 347 VEB mikroelektronik Transistoren DDR sd 346 Funkamateur FUNKAMATEUR-Bauelementeinformation SD349 telefunken transistoren MIKROELEKTRONIK ERFURT aktive elektronische bauelemente ddr

    transistor BD 263

    Abstract: No abstract text available
    Text: SIEMENS BUZ 50 B SIPMOS Power Transistor • N channel • Enhancement mode Type Vds BUZ 50 B 1000 V 2A flbsion Package Ordering Code 8 Í2 TO-220 AB C67078-A1307-A4 Maximum Ratings Parameter Symbol Drain source voltage Vds Drain-gate voltage ^DGR Rqs = 20 k£2


    OCR Scan     		PDF O-220 C67078-A1307-A4 235b05 fl235bGS transistor BD 263

    Transistoren DDR

    Abstract: vergleichsliste TELEFUNKEN bux 127 aktive elektronische bauelemente ddr BUX 127 SF 127 vergleichsliste DDR "vergleichsliste" bauelemente DDR sf 369
    Text: VT FUNKAMATEUR-Bauelementeinformation Vergleichsliste für Transistoren DDR/international DDR-Typ Vergleichstyp Beschreibung Hinweise SC 237/238/239 SC 307/308/309 SCE 237 SD 335/337/339 BC 237/238/239 BC 307/308/309 BC 847 BCW 71/72 BCX 70 BC 848 BCW 31/32/33/60


    OCR Scan     		PDF SCE237 SCE238 SCE239 SCE308 Transistoren DDR vergleichsliste TELEFUNKEN bux 127 aktive elektronische bauelemente ddr BUX 127 SF 127 vergleichsliste DDR "vergleichsliste" bauelemente DDR sf 369

    Untitled

    Abstract: No abstract text available
    Text: j » mfRFProcfcjcfs ftp products M ic m s e -m * 140 C o m m e rc e Drive m M o m g e n « « ^ ^ , p a 18936 - 10 « Tel: 215 6 3 1-9 840 A a w w sK i ô y Tiwfiw arotyy i c m <f ì A « O U I 4 U Ü -4 RF & MICROWAVE TRANSISTORS 860-900MHZ CLASS C, BASE STATIONS


    OCR Scan     		PDF 860-900MHZ FREQUEMCYB75MHZ S01480-P SD1400-02 SD1400-2

    IR4060

    Abstract: BUZ50 C67078-A1307-A4
    Text: SIEMENS BUZ 50 B SIPMOS Power Transistor • N channel • Enhancement mode Type Vbs to BUZ 50 B 1000 V 2A flbston 8 Í2 Package Ordering Code TO-220 AB C67078-A1307-A4 Maximum Ratings Parameter Symbol Drain source voltage ^DS Drain-gate voltage ''DGR


    OCR Scan     		PDF O-220 C67078-A1307-A4 S35b05 fl235bQS IR4060 BUZ50 C67078-A1307-A4

    diode code 88

    Abstract: No abstract text available
    Text: C i p Ì Ü &P">» - i "2 '|i SIPMOS Small-Signal Transistors VDS la = 240 V = 0 .2 9 /0 .2 5 A ^ D S o n = 8 BSP 88 BSS 88 TO -92 (BSS 88) SOT-223 (BSP 88) Q • N channel • Enhancement mode • Packages: SOT-223, s TO-92 ’ ) G Type Ordering code


    OCR Scan     		PDF OT-223 OT-223, Q62702-S303 Q67000-S101 Q62702-S454 12-mm Q67000-S070 diode code 88

    SSY20

    Abstract: SF828 VEB mikroelektronik funkamateur BUX 127 SF126 SF 127 SF128 SF826 SF 829 B
    Text: FUNKAMATEUR-Bauelementeinformation DDR-SiliziumTransistoren Typenübersicht Si-Transistoren des VEB Kombinat Mikroelektronik Grenzdaten Zonen­ Vorzugs­ anwendungen2 folge P,o, [mW, W ] Typ1 Kenndaten UcBO U ceO T • T * 1C , ACsat [V] [V] [mA, (A)] fiT3


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    SF126

    Abstract: transistor SD335 SD349 SSY20 SF829 SD 338 SF826 mikroelektronik Berlin SD339 SD338
    Text: Der Kollektor ist mit der metallischen Montageflache leitend verbunden Uw e Beier Transistoren aus dem Kombinat Mikroelektronik electrónica • Band 245 UWE BEIER Transistoren aus dem Kombinat M ikroelektronik M ILITARVERLAG DER DEUTSCHEN DEM OKRATISCHEN


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    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 50 B SIPMOS Power Transistor • N channel • Enhancement mode Type BUZ 50 B Vbs 1000 V b 2A ^BS on 8ß Package Ordering Code TO-220 AB C67078-A1307-A4 Maximum Ratings Parameter Symbol Drain source voltage ^DS Drain-gate voltage '' dgr Rq s = 20 ki2


    OCR Scan     		PDF O-220 C67078-A1307-A4

    8D140

    Abstract: SD1400-2 oomils APAA M118 SD1400-02
    Text: M tm mi RF Products RF^Pmducts m - • M icrosem i 140 C o m m erc e Drive M o n tg o m ery ville, PA 18936-1013 18936-1013 Tel: 2 1 5 6 3 1 -9 8 4 0 ^ ^ _ SD1400-2 RF & MICROWAVE TRANSISTORS 860-900MHz CLASS C, BASE STATIONS CLASS C TRANSISTOR FREQUENCY875MHZ


    OCR Scan     		PDF 860-900MHz FREQUENCY875MHZ SD1400-02 SD1400-2 SD1400-2 900MHz S88SOi400- 8D140 oomils APAA M118

    transistor 372

    Abstract: No abstract text available
    Text: SIEMENS BSP 372 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated • ^GS th = °-8 - 2 0 v Type lD ^DS(on) Package Marking 1.7 A 0.31 Q SOT-223 BSP 372 BSP 372 Vds 100 V Type BSP 372 Ordering Code Q 67000-S300


    OCR Scan     		PDF OT-223 67000-S300 E6327 transistor 372

    Untitled

    Abstract: No abstract text available
    Text: UNITRODE CORP ÎË 9347963 UNITRODE dF CORP J ^347^1=3 GDlGSlb 5 |~~ 92D 10516 D T - M -/ 3 POWER MOSFET TRANSISTORS , JTX, JTXV 400 Volt, 0.3 Ohm N-Channel FEA TU R ES • Fa st S w itching • Low Drive C urren t • E a se of Parallelin g • No S eco n d B reakd ow n


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    Untitled

    Abstract: No abstract text available
    Text: _ • 0045644 fZ 7 Ä 7# ETS ■ SGTH _ S C S -T H O M S O N [Ä « [L iO T r e s S T E 1 8 0 N 05 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE V dss STE180N05 50 V R d S o ii < 0.006 a Id 180 A ■ HIGH CURRENT POWER MODULE


    OCR Scan     		PDF STE180N05 STH65N05 E81743) 004SS4T

    2N6788 motorola

    Abstract: 2N6788 Motorola 2n6788
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information P o w er Field E ffe c t Transistor N-Channel Enhancement-Mode Silicon Gate TMOS N-CHANNEL TMOS POWER FET rDS on “ 0.3 OHM 100 VOLTS . . . designed for high voltage, high speed power sw itching applications such as sw itching regulators, converters, so ­


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: UNITRODE CORP iS 9347963 DE § ^ 3 4 7 ^ 3 GDlD7flb •=] U N I T R O D E CORP 92D 10786 POWER MOSFET TRANSISTORS D/-37-&#39;*' UFN1130 700 Volt, 3.5 Ohm N-Channel FEATURES DESCRIPTION This new Unitrode power MOSFET utilizes the latest high voltage advanced technology


    OCR Scan     		PDF D/-37-' UFN1130

    transistor irfp 150

    Abstract: IRFP 150 transistor irfp IRFP P CHANNEL IRFP IRFP150 3421A transistor irfp IRFP-150
    Text: Æ 7 SGS-THOMSON ^ 7 £ . M ^G J M M <§§ IRFP 150/FI-151/FI IRFP 152/FI-153/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRFP150 IRFP150FI IRFP151 IRFP151FI IRFP152 IRFP152FI IRFP153 IRFP153FI V DSS ^D S (o r 'd ' 100 100 60 60 100 100


    OCR Scan     		PDF 150/FI-151/FI 152/FI-153/FI IRFP150 IRFP150FI IRFP151 IRFP151FI IRFP152 IRFP152FI IRFP153 IRFP153FI transistor irfp 150 IRFP 150 transistor irfp IRFP P CHANNEL IRFP 3421A transistor irfp IRFP-150

    S100 transistor

    Abstract: BUK455-200A BUK455-200B S100 T0220AB transistor smps circuit TRANSISTOR BO 345 db40ci0 PHILIPS S100
    Text: PHILIPS INTERNATIONAL bSE D B 711002b ÜObMQÔb bbT • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF 711002h BUK455-200A/B T0220AB buk455 -200a -200b Ti/C-150 -ID/100 S100 transistor BUK455-200A BUK455-200B S100 transistor smps circuit TRANSISTOR BO 345 db40ci0 PHILIPS S100

    diode sy 345

    Abstract: diode SY 192 sd 339 sy 320 diode SD 338 SY 345 KT 829 b k3451 KT 828 A SD337
    Text: SERVICE-MITTEILUNGEN V E B R F T I N D U S T R I E V E R T R I E B R U N D F U N K UND F E R N S E H E N t B i n n a |r a d i o - t e l e v i s i o n I Ausgobe 1-2 _ _ Febr. 89 1-7 Mitteilung aus dam VEB RFT IV RuF Leipzig, Organisation Plan der Inventurtermine Ersatztell/sroßhandel 1989


    OCR Scan     		PDF III/18/379 diode sy 345 diode SY 192 sd 339 sy 320 diode SD 338 SY 345 KT 829 b k3451 KT 828 A SD337

    IRFP RE 40

    Abstract: IRFP P CHANNEL IRFP150 SGS Transistor
    Text: r= Z SGS-THOM SON ^ 7#» HDfgMilLlKgirMDlgi IRFP 150/F I-151/FI IRFP 152/F I-153/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^D S on IRFP150 IRFP150FI 100 V 100 V 0.055 fi 0.055 Q IRFP151 IRFP151 FI 60 V 60 V 0.055 0.055 IRFP152 IRFP152FI


    OCR Scan     		PDF 150/F I-151/FI 152/F I-153/FI IRFP150 IRFP150FI IRFP151 IRFP152 IRFP152FI IRFP RE 40 IRFP P CHANNEL SGS Transistor

    17mQ

    Abstract: to220 5 lead plastic UFN513
    Text: U N IT R O D E CORP 9347963 ^2 UNITRODE O Q lD b lt fi 1 ~ DE CORP 92D 10696 D i POWER MOSFET TRANSISTORS ^fnsio 100 Volt, 0.6 Ohm N-Channel UFN512 UFN513 FEATURES • Compact Plastic Package • Fast Switching • Low Drive Current • Ease of Paralleling


    OCR Scan     		PDF UFN512 UFN513 17mQ to220 5 lead plastic UFN513