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    STH65N05 Search Results

    STH65N05 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    STH65N05 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    STH65N05FI Toshiba Power MOSFETs Cross Reference Guide Original PDF

    STH65N05 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STH65N05

    Abstract: STH65N05FI 65260a
    Text: STH65N05 STH65N05FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH65N05 STH65N05FI • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.02 Ω < 0.02 Ω 65 A 37 A TYPICAL RDS(on) = 0.017 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		PDF STH65N05 STH65N05FI 100oC 175oC O-218 ISOWATT218 STH65N05 STH65N05FI 65260a

    STE180N05

    Abstract: STH65N05
    Text: STE180N05 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE V DSS R DS on ID STE180N05 50 V < 0.006 Ω 180 A 4 • ■ ■ ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY (SEE STH65N05 FOR RATING) VERY LARGE SOA - LARGE PEAK POWER


    Original     		PDF STE180N05 STH65N05 E81743) STE180N05

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    SSH6N80

    Abstract: IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent
    Text: Power MOSFETs Cross Reference INDUSTY STANDARD 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205


    Original     		PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 SSH6N80 IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent

    sth65n05

    Abstract: STH65N05FI
    Text: 7 ^ 2 3 7 □□4ST70 2 7Ô • S G T H STH65N05 STH65N05FI SGS-THOMSON ¡[LISTO«! N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH65N05 STH65N05FI ■ . ■ ■ . ■ . . ■ Vdss RDS on Id 50 V 50 V < 0.02 n < 0.02 n 65 A 37 A TYPICAL RDS(on) = 0.017 £2


    OCR Scan     		PDF 4ST70 STH65N05 STH65N05FI STH65N05/FI STH65N05FI

    0n05

    Abstract: No abstract text available
    Text: £ j ï SGS-THOMSON ULKgraMOeS S T E 1 8 0N05 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYP E V STE180N05 dss 50 V RDS on Id < 0 .0 0 6 Q. 180 A . HIGH CURRENT POWER MODULE . AVALANCHE RUGGED TECHNOLOGY (SEE STH65N05 FOR RATING)


    OCR Scan     		PDF STE180N05 STH65N05 E81743) 0n05

    Untitled

    Abstract: No abstract text available
    Text: _ • 0045644 fZ 7 Ä 7# ETS ■ SGTH _ S C S -T H O M S O N [Ä « [L iO T r e s S T E 1 8 0 N 05 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE V dss STE180N05 50 V R d S o ii < 0.006 a Id 180 A ■ HIGH CURRENT POWER MODULE


    OCR Scan     		PDF STE180N05 STH65N05 E81743) 004SS4T