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    SDF12N100 Search Results

    SDF12N100 Datasheets (4)

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    SDF12N100 Solitron Devices VDS (V) =, Id Continuous Tc=25C (A) = 12, Idm Pulsed (A) = 48, RDS (On) (Ohms) = 1... Scan PDF
    SDF12N100GAFD Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF12N100GAFS Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF12N100GAFU Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF

    SDF12N100 Datasheets Context Search

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    1DS6

    Abstract: SDF12N100
    Text: Æ lltro n FRODUCT DEVICES.INC. CÂTÂLO' N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER' SYMBOL D r a in - s o u r c e V o l t . l D r a in - G a t e V o lt a g e (R g s =1.0M o ) (1 ) G a t e - S o u r c e V o lt a g e Con t i nuous


    OCR Scan     		00A/jjLS 300nS, SDF12N100 1DS6 PDF

    HiSpi

    Abstract: SS550
    Text: Æ lltron PRODUCT DEVICES.INC. ¡177 BLUE HERON BLVD. • RIVIERA BEACH, FLORIDA 33404 TEL: 407 848-4311 • TLX: 5 1 -343S • FAX: (407) 863-5946 N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER 1000V, UNITS SYMBOL D r a i n - s o u r c e Vo 1t .(1)


    OCR Scan     		-343S SDF12N HiSpi SS550 PDF