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    SDF12N90 Search Results

    SDF12N90 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SDF12N90 Solitron Devices VDS (V) =, Id Continuous Tc=25C (A) = 12, Idm Pulsed (A) = 48, RDS (On) (Ohms) = 0... Scan PDF
    SDF12N90GAFD Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF12N90GAFS Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF12N90GAFU Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF

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    Untitled

    Abstract: No abstract text available
    Text: SDF12N90GAFVGD1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)900 V(BR)GSS (V)20 I(D) Max. (A)12 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)48 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)300 Minimum Operating Temp (øC)-55


    Original     		PDF SDF12N90GAFVGD1N

    Untitled

    Abstract: No abstract text available
    Text: ^ ¡ » lit r o n UFA? dev ,E E S . _ PRODUCT N-CHANNEL ENHANCEMENT MOS FET 900V, 12A , 0 .9 Q ABSOLUTE MAXIMUM RATINGS PARAMETER UNITS SYMBOL Drain-source Vo 1t . 1) Drai n-Gate Vo 1tage ( R g s » 1 . 0 M ci ) (1) Gate-Source Voltage Con t inuous


    OCR Scan     		PDF SDF12N90 IF-12A

    Untitled

    Abstract: No abstract text available
    Text: ^¡»litron PRODUCT DEVICES.INC. 1177 BLUE HERON BLVD. • RIVIERA BEACH, FLORIDA 33404 4 0 7 863-5946 N-CHANNEL ENHANCEMENT MOS FET TEL: ( 4 0 7 ) 8 4 8 - 4 3 1 1 • TLX: 51-3435 »FAX: ABSOLUTE MAXIMUM RATINGS PARAMETER 900V, SYMBOL UNITS Drain-source Volt.(l)


    OCR Scan     		PDF 300hS,

    1F12A

    Abstract: SDF12N90
    Text: Æ ilt r o n câtâlq product n F v ic F s .in c . N-CHANNEL ENHANCEMENT MOS FET Vdc VDGR 900 Vdc VGS ±20 ID - 12 Ade A IDM 48 PD 300 W 2.4 W/°C •c O p e ra tin g & S to ra g e Temp. TJ/Tsig Therm al R th Jc -5 5 TO +150 0 .4 2 "C/W TL 300 «C R e s is t a n c e


    OCR Scan     		PDF SDF12N90 MIL-S-19500 300nS. 1F12A