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    SDF1NA60 Search Results

    SDF1NA60 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SDF1NA60 Solitron Devices VDS (V) = 600, Id Continuous Tc=25C (A) = 1.5, Idm Pulsed (A) = 6, RDS (On) (Ohms)... Scan PDF
    SDF1NA60JAAD Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF1NA60JAAS Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF1NA60JAAU Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF1NA60JABD Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF1NA60JABS Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF1NA60JABU Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF1NA60JDAD Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF1NA60JDAS Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF1NA60JDAU Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF

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    Abstract: No abstract text available
    Text: ^»litron PRODUCT CÂTÂL ' DEVICES.INC. 3301 ELECTRONICS WAY • WEST PALM BEACH,FLORIDA 33407 TEL: -407 848-4311 • TLX: 51 -3435 • FAX: (407) 863-5946 N-CHANNEL ENHANCEMENT MOS FET 600V, 1 .5A, 6 . 0 0 ABSOLUTE MAXIMUM RATINGS PARAMETER D r a in - s o u r c e Vo I t . ( 1)


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    SDF1NA60

    Abstract: Power DIODE A30 a30 DIODE DIODE A30
    Text: Æntran PRODUCT DEVICES,INC. N-CHANNEL ENHANCEMENT MOS FET 600V, ABSOLUTE MAXIMUM RATINGS PARAMETER UNITS SYMBOL VDSS Drain-source Vo It. 1 Drain-Gate Vo 1tage VDGR (Rg s =1-OM o ) (1) Gate-Source Voltage VGS Continuous Drain Current Continuous ID iTc = 25'C)


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    PDF ID-250 SDF1NA60 MIL-S-19500 300nS, Power DIODE A30 a30 DIODE DIODE A30