Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SDF460 Search Results

    SDF460 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SDF460 Solitron Devices VDS (V) =, Id Continuous Tc=25C (A) = 21, Idm Pulsed (A) = 84, RDS (On) (Ohms) = 0... Scan PDF
    SDF460JEAD Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF460JEAS Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF460JEAU Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF460JEBS Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF460JEBU Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF460JECD Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF460JECS Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF460JECU Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF460JEDD Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF460JEDS Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF460JEDU Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF

    SDF460 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SDF460JECSHU1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)21 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)84 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC)-55


    Original     		PDF SDF460JECSHU1N

    Untitled

    Abstract: No abstract text available
    Text: SDF460JECSHSN Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)21 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)84 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC)-55


    Original     		PDF SDF460JECSHSN

    Untitled

    Abstract: No abstract text available
    Text: SDF460JECSHD1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)21 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)84 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC)-55


    Original     		PDF SDF460JECSHD1N

    Untitled

    Abstract: No abstract text available
    Text: SDF460JECVHD1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)21 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)84 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC)-55


    Original     		PDF SDF460JECVHD1N

    SDF460

    Abstract: No abstract text available
    Text: Jolltron PRODUCT DEVICES.INC. N-CHANNEL ENHANCEMENT MOS PET 500V, 21A , 0.27Q ABSOLUTE MAXIMUM RATINGS PARAMETER UNITS SYMBOL Drain-source Volt. l Drain-Gate Vo 1tage (RGs=1.0Mn) (1) Gate-Source Voltage Con t inuous Drain Current Continuous (Tc = 25 *C) Drain Current Pulsed(3)


    OCR Scan     		PDF 300nS, SDF460 MIL-S-19500

    Untitled

    Abstract: No abstract text available
    Text: Æ iitro n ,- _ PRODUCT liz? 5b¥f SSÏÏsn'î’n'x"1?[E?Ì3ÌE.'S i:fì S ì ;a«” ”« 6 n - ch a n n el en h an cem en t m o s f e t 500 V, ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-source Vo 1t .(1 VDSS Drain-Gate Vo 1tage VDGR (R g s -I.OM ci) (l)


    OCR Scan     		PDF SDF460 5DF460 5DF460 i/dt-100A/

    Untitled

    Abstract: No abstract text available
    Text: U ntren PRODUCT DEVICES.INC. ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER Drain-source Volt. l VDSS Drain-Gate Vo 1tage VDGR (Rcs-l.OMn) (l) Gate-Source Voltage VGS Cont inuous Drain Current Continuous ID (Tc = 25*C) Drain Current Pulsed(3) IDM PD Total Power Dissipation


    OCR Scan     		PDF PARA25 IF-21A fib02