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    SDF9NA80 Search Results

    SDF9NA80 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SDF9NA80 Solitron Devices VDS (V) =, Id Continuous Tc=25C (A) = 9, Idm Pulsed (A) = 36, RDS (On) (Ohms) = 1.... Scan PDF
    SDF9NA80JAAD Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF9NA80JAAS Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF9NA80JAAU Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF9NA80JABD Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF9NA80JABS Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF9NA80JABU Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF

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    A37 diode

    Abstract: SDF9NA80 a372
    Text: Æ lltron PRODUCT DEVICES.INC. CATTALO' N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER D ra in -S o u rc e V o l t . l Drain-Gate Vo 1tage (Res-l-OMo) (1) Gate-Source Voltage Con ti nuous Drain Current Continuous (Tc = 25* C) D rain C urrent P u lse d (3 )


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    PDF SDF9NA80 MIL-S-19500 300nS, A37-2 A37 diode a372

    Untitled

    Abstract: No abstract text available
    Text: ^Stltron PR O DU CT DEVICES.INC. ABSOLUTE MAXIMUM RATINGS PARAMETER 80 0 V , SYMBOL Drain-Source V o l t . l D r a i n - G a t e Vo 1t age ( R GS= 1 . 0 Mo ) ( 1 ) Ga te -So ur ce V o l t a g e Con t i nuous D r a i n C u r r e n t C o n t i nu o u s ( Tc = 2 5 * C)


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    PDF SDF9NA80 A37-2

    Untitled

    Abstract: No abstract text available
    Text: Æwtion PRODUCT CÂTÂLÛi D EV I CE S. IN C. N-CHANNEL ENHANCEMENT MOS FET 3301 ELECTRONICS WAY • WEST PALM BEACH. FLORIDA 33407 T E L : 407 8 4 8 - 4 3 J 1 • TLX: 51 -3435 • FAX: (407) 8G3-5946 800V, 9.0A, 1 . 4 0 ABSOLUTE MAXIMUM RATINGS PARAMETER


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    PDF 8G3-5946 SDF9NA80 A37-2