Untitled
Abstract: No abstract text available
Text: 8368602 SOLITRON DEVICES INC TS 95D 02891 d ÊT| 03bflbDS D T~~ S S ~ 7 -ÆMron Devices, Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER PIMP EPITAXIAL PLANAR POWER TRANSISTOR* FORMERLY 68 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum
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03bflbDS
305mm)
2N6061,
2N6377,
SDT3601
SDT3604,
SDT3901
SDT3904,
2N5678,
2N6382
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Untitled
Abstract: No abstract text available
Text: -Jfoutran P l M i M ? © Â ? M ,© ( MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER Devices. Inc. PIMP EPITAXIAL PLANAR POWER TRANSISTOR* * (FORMERLY 68 CONTACT METALLIZATION B ase and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "C hrom e Nickel S ilv er" a lso available)
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305mm)
SDT3901
SDT3904,
2N5678,
2N6382
C-100
C-101
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transistor c101
Abstract: c18v 2N6061 2N6382 2N5678 2N6377 SDT3604 SDT3901 SDT3904 c101 TRANSISTOR
Text: ^Ælltran MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER Devices. Inc. PIMP EPITAXIAL PLANAR POWER TRANSISTOR* FORMERLY 68 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)
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305mm)
C-101
transistor c101
c18v
2N6061
2N6382
2N5678
2N6377
SDT3604
SDT3901
SDT3904
c101 TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: ^Ælltran Devices. Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER PIMP EPITAXIAL PLANAR POWER TRANSISTOR* FORMERLY 68 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)
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305mm)
20MHz
20MHz
900pF
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Untitled
Abstract: No abstract text available
Text: 'SOLITRON DEVICES INC äh de^ I fl3L.ab02 O D o a s ö T a | _ 7 " ' 3 3 - / 7 ELEMENT NUMBER 268 MEDIUM TO HIGH VOLTAGE, FAST SWITCHING PNP EPITAXIAL PLANAR POWER TRANSISTOR * CONTACT METALLIZATION Base and emitter: > 50.000A Aluminum FORMERLY 68 Collector: Polished Silicon
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36nim
20MHz
20MHz
900pF
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2N4866
Abstract: No abstract text available
Text: 45 SILICON POWER TRANSISTORS O V CBO V < CASE TYPE TYPE NUMBER < in CUR R E N V EBO V M IN . hFE I M AX. r G A IN V CE V SATURATIOIV VO LTA G ES @ I 'c A V CE s V BE(s) V I V *C A I *B A 50 AMP SILICON NPN SDT9631 SDT9632 SDT9633 TO-63 TO-63 TO-63 250 275
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