Contextual Info: SDT7904 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)325 I(C) Max. (A)10 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

SDT7201

Abstract: SDT7603 SDT7207 SDT7612
Contextual Info: 35 SILICON POWER TRANSISTORS CURREIV T G A IN SATURATION J VO LTA G ES ë> TYPE NUMBER CASE TYPE V CBO V V CEO V V EBO V hFE M IN . I M AX. V CE *C V CE s V BE(s) V I V 'c . A 'b I A U A 5.0 5.0 5.0 5.0 5.0 5.0 .60 .60 .60 1.50 1.50 1.50 5.0 5.0 5.0 .500

DTS517

Abstract: BUV28A
Contextual Info: POWER SILICON TRANSISTORS Item Number >C Part Number Manufacturer Type Max A V(8R)CEO Of) PD Max ON) hFE fT 'CBO Max t0N Max Min (HZ) (A) (s) r (CE)ut Max Toper Max (Ohms) (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . .15

sdt12303

Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 >= 40 50 60 70 80 7.0 8.0 8 8.0 8.0 10 10 10 10 10 ~eneral:seml SDT7809 SDT7809 SDT7809 BUX17B BUX17B SDT14204 SDT14304 SDT14304 XGSR10030 Solltron PPC Product Sid St Dvcs GE Solid St NthAmerSemi

SDT7201

Abstract: 2N5740 SDT3109 2n5290 2N5737 SDT7612
Contextual Info: 35 SILICON POWER TRANSISTORS CURREIV T G A IN SATURATION J VO LTA G ES ë> TYPE NUMBER CASE TYPE V CBO V V CEO V V EBO V hFE M IN . I M AX. V CE *C V CE s V BE(s) V I V 'c . A 'b I A U A 5.0 5.0 5.0 5.0 5.0 5.0 .60 .60 .60 1.50 1.50 1.50 5.0 5.0 5.0 .500