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    SEMICONDUCTOR Search Results

    SEMICONDUCTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
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    SEMICONDUCTOR Price and Stock

    Nexperia BAT54S,215

    Schottky Diodes & Rectifiers DIODE-SML SIGNAL SOT23/TO-236A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BAT54S,215 Reel 5,859,000 3,000
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    • 10000 $0.0136
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    Nexperia 2N7002,215

    MOSFETs 2N7002/SOT23/TO-236AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 2N7002,215 Reel 4,458,000 3,000
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    Nexperia BAV99,215

    Small Signal Switching Diodes DIODE-SML SIGNAL SOT23/TO-236A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BAV99,215 Reel 3,816,000 3,000
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    Nexperia PMBT3904,215

    Bipolar Transistors - BJT SOT23 40V .2A NPN SWITCHING
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI PMBT3904,215 Reel 2,286,000 3,000
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    Nexperia PMBT2222A,215

    Bipolar Transistors - BJT SOT23 40V .6A NPN SWITCHING
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI PMBT2222A,215 Reel 2,172,000 3,000
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    SEMICONDUCTOR Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N1131 Semiconductor Technology Small Signal Silicon Transistors Scan PDF
    2N1132 Semiconductor Technology Small Signal Silicon Transistors Scan PDF
    2N1132B Semiconductor Technology Small Signal Silicon Transistors Scan PDF
    2N1220 Semiconductor Technology Small Signal Silicon Transistors Scan PDF
    2N1221 Semiconductor Technology Small Signal Silicon Transistors Scan PDF
    2N1222 Semiconductor Technology Small Signal Silicon Transistors Scan PDF
    2N1223 Semiconductor Technology Small Signal Silicon Transistors Scan PDF
    2N1228 Semiconductor Technology Small Signal Silicon Transistors Scan PDF
    2N1229 Semiconductor Technology Small Signal Silicon Transistors Scan PDF
    2N1230 Semiconductor Technology Small Signal Silicon Transistors Scan PDF
    2N1231 Semiconductor Technology Small Signal Silicon Transistors Scan PDF
    2N1232 Semiconductor Technology Small Signal Silicon Transistors Scan PDF
    2N1233 Semiconductor Technology Small Signal Silicon Transistors Scan PDF
    2N1234 Semiconductor Technology Small Signal Silicon Transistors Scan PDF
    2N1254 Semiconductor Technology Small Signal Silicon Transistors Scan PDF
    2N1255 Semiconductor Technology Small Signal Silicon Transistors Scan PDF
    2N1256 Semiconductor Technology Small Signal Silicon Transistors Scan PDF
    2N1257 Semiconductor Technology Small Signal Silicon Transistors Scan PDF
    2N1258 Semiconductor Technology Small Signal Silicon Transistors Scan PDF
    2N1259 Semiconductor Technology Small Signal Silicon Transistors Scan PDF
    ...

    SEMICONDUCTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistors bipolar

    Abstract: japan brt
    Text: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: RN1130MFV Category: Transistors /Bipolar Small-Signal Transistors/Bias Resistor Built-in Transistors Single


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    RN1130MFV RN2130MFV RN1130MFV 16-Apr-09 transistors bipolar japan brt PDF

    SZZU001B

    Abstract: CD4012BE harris CD4011BF3 5035 cd4011bf3a CD4012BE texas
    Text: Data sheet acquired from Harris Semiconductor SCHS021 IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information


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    SCHS021 CD4023BF3A CD4023BM CD4023BM96 CD4023BNSR CD4023BPW CD4023BPWR JM38510/05053BCA SZZU001B CD4012BE harris CD4011BF3 5035 cd4011bf3a CD4012BE texas PDF

    Untitled

    Abstract: No abstract text available
    Text: 8 Bit Microcontroller TLCS-870/C Series TMP86FH93NG The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity


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    TLCS-870/C TMP86FH93NG PDF

    05152

    Abstract: CD4027B CD4027BE
    Text: Data sheet acquired from Harris Semiconductor SCHS032 IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information


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    SCHS032 CD4027BE CD4027BF CD4027BF3A CD4027BM CD4027BNSR CD4027BPW CD4027BPWR JM38510/05152BEA 05152 CD4027B CD4027BE PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: TLRMH30TP F Category: Optical Semiconductor Devices/Visible LEDs/High-Brightness LED Lamps(Φ5)


    Original
    TLRMH30TP 16-Apr-09 PDF

    SCBA004C

    Abstract: scaa035b
    Text: Data sheet acquired from Harris Semiconductor SCHS287 This data sheet is applicable to the CD54/74AC240, CD54ACT240, CD54AC241, and CD54/74ACT241. The CD74AC241 was not acquired from Harris Semiconductor. See SCHS244 for information on the CD74ACT240, CD74AC244, and CD74ACT244.


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    SCHS287 CD54/74AC240, CD54ACT240, CD54AC241, CD54/74ACT241. CD74AC241 SCHS244 CD74ACT240, CD74AC244, CD74ACT244. SCBA004C scaa035b PDF

    tc258c

    Abstract: No abstract text available
    Text: TOSHIBA O I S C R E T E / O P T O } 9097250 TOSHIBA VI < D ISC RETE/O PTO TOSHIBA SEMICONDUCTOR T o s h ib a DE I TEHTEiSD GGlbflia 99D 16812 D T -B 9 -1 3 FIELD EFFECT TRANSISTOR Y T F *4 4 0 SILICON N CHANNEL MOS TYPE TECHNICAL DATA TT-MOS I ) HIGH SPEED, HI G H C U RRENT SWITCHING APPLICATIONS.


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    250liA 250uA 00A/ys tc258c PDF

    TIM1414-4LA-371

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA TIM1414-4LA-371 RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at ldB Compression Point Linear Gain SYMBOL PldB Drain Current Power Added Efficiency 3rd Order Intermodulation


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    TIM1414-4LA-371 TIM1414-4LA-371 PDF

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TOSHIBA TIM0910-15L MICROWAVE SEMICONDUCTOR TECHNICAL DATA Pinch-off Voltage Saturated Drain Current Gate-SourceBreakdown Voltage Thermal Resistance MIN. 41.0 TYP. 42.0 dB 6.0 7.0 MAX. — — A dB dBc -42 -45 A _ 4.5 5.5 TYP. 3000


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    TIM0910-15L 30dBm 145mA 2-11C1B) PDF

    POUT315

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-16SL-081 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES • ■ LOW INTERMODULATION DISTORTION HIGH GAIN IM3=-45dBc a t Po=31.5dBm GldB=8.0dB at 5.9GHz to 6.4GHz Single C arrier Level BROAD BAND INTERNALLY MATCHED


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    -45dBc TIM5964-16SL-081 2-16G1B) POUT315 PDF

    TOSHIBA RECTIFIER

    Abstract: No abstract text available
    Text: Introduction Thank you very much for using TOSHIBA Semiconductor Devices. This volume is the latest 1994 Version o f the “ Recti­ fiers” Semiconductor Data Book. Recent years have seen the phenomenal propagation o f elec­ tronic equipment o f all kinds including information processing


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    PDF

    1SS TRANSISTOR

    Abstract: No abstract text available
    Text: TOSHIBA 9 Ó 9 7 2 5 0 TO SHIBA ~hìhi -CDISCRET E / O P T O } =H D IS C R E T E /O P T O 99D D E I lU'lveSQ □□ I b ' m 16991 DT^3-£>5~ TOSHIBA FIELD EFFECT TRANSISTOR ARRAY SEMICONDUCTOR S 3 5 1 3 TECHNICAL DATA S I L I C O N N C H A N N E L M O S T Y P E (4 in 1)


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: Tem ic 80C32/80C52 Semiconductors CMOS 0 to 44 MHz Single Chip 8-bit Microcontroller 1. Description TEMIC’s 80C52 and 80C32 are high performance CMOS versions of the 8052/8032 NMOS single chip 8 bit Microcontroller. The fully static design of the TEMIC 80C52/80C32


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    80C32/80C52 80C52 80C32 80C52/80C32 80C32: 80C52 80C32/80C52-L16: PDF

    227G

    Abstract: No abstract text available
    Text: TO SHIBA PHOTOCOUPLER SEMICONDUCTOR TOSHIBA TECHNICAL TLP227G, TLP227G-2 DATA PHOTO RELAY TENTATIVE DATA T LP 227G CORDLESS TELEPHONE PABX MODEM The TOSHIBA TLP227G series consist of a gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a plastic


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    TLP227G, TLP227G-2 TLP227G TLP227G 120mA 2500Vrms 227G PDF

    E5550 temic

    Abstract: No abstract text available
    Text: Tem ic e5550 Semiconductors Standard Read/Write Identification IC Description The e5550 is a contactless R/W-IDentification IC IDIC * for general-purpose applications in the 125 kHz range. A single coil, connected to the chip, serves as the IC's power supply and bidirectional communication


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    e5550 e5550 D-74025 17-Mar-98 E5550 temic PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA {D IS CRETE /OPT O} DE • TDTTSSD □□It.ñOñ 4 99D 16808 9097250 TOSHIBA <DISCRETE/OPTO> SEMICONDUCTOR ¿/ashihi I Ti TO SH IBA F IE L D EFFEC T D'F-Sq-IS TRA N SISTO R Y T F 2 5 2 S IL IC O N TECHNICAL DATA N CHANNEL MOS T Y P E ff-M O S H


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    100nA 250uA 250uA Tc-25 00A/us PDF

    Untitled

    Abstract: No abstract text available
    Text: T e m ic TCET1600 up to TCET4600 Semiconductors Optocoupler with Phototransistor Output Description The TCET1600/ TCET2600/ TCET4600 consist of a phototransistor optically coupled to 2 gallium arsenide inffared-emitting diodes in a 4-lead up to 16-lead plastic


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    TCET1600 TCET4600 TCET1600/ TCET2600/ TCET4600 16-lead D-74025 04-Dec-97 PDF

    SG3000GXH29

    Abstract: SG3000GXH 13-108D1A
    Text: TOSHIBA GATE TURN-OFF THYRISTOR SEMICONDUCTOR TOSHIBA TECHNICAL SG3000GXH29 DATA SG3000GXH29 INVERTER APPLICATION U nit in mm 2 - 0 3.5 ± 0.2 Repetitive Peak Off-State Voltage : V d r m = 4500V R.M.S On-State C urrent : It (RMS)= 1200A Peak Turn-Off C urrent


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    SG3000GXH29 SG3000GXH29) SG3000GXH29 SG3000GXH 13-108D1A PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA PHOTOCOUPLER SEMICONDUCTOR T O SH IB A TECHNICAL 4N38 Short , 4N38A(Short) DATA GaAs IRED & PHOTO-TRANSISTOR (4N38(Short) AC LINE/DIGITAL LOGIC ISOLATOR. DIGITAL LOGIC/DIGITAL LOGIC ISOLATOR. TELEPHONE LINE RECEIVER. TWISTED PAIR LINE RECEIVER. HIGH FREQUENCY POWER SUPPLY FEEDBACK CONTROL.


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    4N38A 2500Vrms UL1577, E67349 11-7A8 PDF

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TOSHIBA MICROWAVE SEMICONDUCTORS TECHNICAL DATA JS9P05-AS FEATURES: •H IG H POWER P1dB=28dBm ■C H IP FORM IHIGH GAIN GldB= f = 38GHz RF PERFORMANCE SPECIF CATIONS CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB


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    28dBm JS9P05-AS 38GHz PDF

    MPS-92

    Abstract: mps92 MPS93
    Text: TOSHIBA MPS92 MPS93 Discrete Semiconductors Silicon PNPTransistor For High Voltage Application Features • High Voltage - Vceo = -300V MPSA92 - Vceo = -200V (MPSA93) • Low Saturation Voltage " VcE(sat) = (Max-) @ b = -20mA, lB = -2mA • Low Collector Output Capacitance


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    MPS92 MPS93 -300V MPSA92) -200V MPSA93) -20mA, MPSA42, MPS-92 MPS93 PDF

    2SC16

    Abstract: No abstract text available
    Text: TOSHIBA { D I S C R E TE /O PT O} 3T • - DËTjTOTTaSO □ OOlfH'í 2 - 1 9097250 TOSHIBA DI SC R E T E / O P T O > 39C 01899 □ SEMICONDUCTOR TECHNICAL DATA * 2 b ? * ì? a * TOSHIBA TRANSISTOR 2S01677 SILICON NPN EPITAXIAL PLANAR INDUSTRIAL APPLICATIONS


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    2S01677 270UHz) 2SC16 PDF

    4N33 APPLICATION NOTE

    Abstract: 4N29 APPLICATION NOTE 4N32A 4N32ASHORT 4n29
    Text: TOSHIBA PHOTOCOUPLER SEMICONDUCTOR T O SH IB A TECHNICAL DATA 4N29 Short , 4N29A(Short), 4N30(Short) 4N31 (Short), 4N32(Short), 4N32A(Short) 4N33(Short) GaAs IRED & PHOTO-TRANSISTOR (4N29(Short) AC LINE/DIGITAL LOGIC ISOLATOR. DIGITAL LOGIC/DIGITAL LOGIC ISOLATOR.


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    4N29A 4N32A 2500Vrms UL1577, E67349 4N33 APPLICATION NOTE 4N29 APPLICATION NOTE 4N32ASHORT 4n29 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POW ER MMIC S9782 MICROWAVE SEMICONDUCTOR TECHNICAL DATA Preliminarv 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C ^ CHARACTERISTICS |SYMBOL CONDITION | M IN. 1 TYP. O u tp u t Pow er Po 37.0 38.0 v d d i= v d d 2 = v d d 3 = io v U N IT —


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    S9782 37dBm 1600MHz 2-11E1A) PDF