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Abstract: No abstract text available
Text: X-RAY / ENERGY DIFFERENTIATION TYPE 64 CH GAMMA-RAY CdTe RADIATION LINE SENSOR DETECTOR C10413 Accomplish X-ray and gamma-ray images with multicolor by energy differentiation FEATURES ●High radiation detection efficiency due to direct conversion type semiconductor CdTe detector
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C10413
SE-164
TAPP1066E03
B1201
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Semiconductor Radiation Detector
Abstract: radiation level sensor GAMMA Radiation Detector cdte Directed Energy image sensor x-ray radiation DETECTOR CIRCUITS
Text: ENERGY DIFFERENTIATION TYPE 64 CH NEW CdTe RADIATION LINE SENSOR C10413 Accomplish X-ray and gamma-ray images with multicolor by energy differentiation FEATURES ●High radiation detection efficiency due to direct conversion type semiconductor CdTe detector
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C10413
SE-171-41
TAPP1066E01
Semiconductor Radiation Detector
radiation level sensor
GAMMA Radiation Detector
cdte
Directed Energy
image sensor x-ray
radiation DETECTOR CIRCUITS
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Untitled
Abstract: No abstract text available
Text: UM9441 PIN RADIATION DETECTORS temperature so long as applied voltage exceeds the saturation voltage. This structure also minimizes the effects of permanent damage caused by neutrons and other high energy radiation. Experiments on devices of the UM9441 design show no
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UM9441
UM9441
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UM9441
Abstract: No abstract text available
Text: UM9441 PIN RADIATION DETECTORS KEY FEATURES DESCRIPTION temperature so long as applied voltage exceeds the saturation voltage. This structure also minimizes the effects of permanent damage caused by neutrons and other high energy radiation. Experiments on
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UM9441
UM9441
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60Co
Abstract: No abstract text available
Text: CHAPTER 7 SCINTILLATION COUNTING Radiation of various types is widely utilized for non-destructive inspection and testing such as in medical diagnosis, industrial inspection, material analysis and other diverse fields. In such applications, radiation detectors play an important role. There are various methods
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NS-33
60Co
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Semiconductor Nuclear Radiation Detector
Abstract: fabrication GAMMA Radiation Detector 54AC00 seu Upset 54AC00 54AC245 AN-926 C1995 JM38510 nuclear radiation detector
Text: National Semiconductor Application Note 926 Michael Maher January 1994 INTRODUCTION Today’s rapidly changing global political climate is significantly impacting the military strategies of Free World countries Important decisions are being made regarding each
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20-3A
Semiconductor Nuclear Radiation Detector
fabrication GAMMA Radiation Detector
54AC00 seu
Upset
54AC00
54AC245
AN-926
C1995
JM38510
nuclear radiation detector
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circuit diagram blood gas analyzer
Abstract: Light Detector laser
Text: CHAPTER 14 APPLICATIONS Photomultiplier tubes PMTs are extensively used as photodetectors in fields such as chemical analysis, medical diagnosis, scientific research and industrial measurement. This chapter introduces major applications of photomultiplier tubes and describes the principle and
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Selection guide
Abstract: United Detector Technology PSD
Text: Selection guide - September 2013 Opto-semiconductor Modules Related products and circuits that enable semiconductor elements to operate at peak performance. A broad range of customization is available. HAMAMATSU PHOTONICS K.K. Opto-semiconductor Modules Related products and circuits that enable
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KACC0001E02
Selection guide
United Detector Technology PSD
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Alps 934a vco
Abstract: No abstract text available
Text: The following set of frequently asked questions concerns the radiation and operational performance of National Semiconductor’s LMX2305WG-MLS, LMX2315WG-MLS, and LMX2325WG-MLS space level phase lock loop devices. The non radiation specific information pertains to both the –QML military and
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LMX2305WG-MLS,
LMX2315WG-MLS,
LMX2325WG-MLS
12/11/9perature
LMX2305/15/25
Alps 934a vco
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5962F9764101VEA
Abstract: 5962F9764101VEC 5962F9764101VXC GDIP1-T16 HS0-6254RH-Q HS1-6254RH HS-6254RH HS9-6254
Text: HS-6254RH Data Sheet August 1999 Radiation Hardened Ultra High Frequency NPN Transistor Array The HS-6254RH is a Radiation Hardened array of five NPN transistors on a common substrate. One of our bonded wafer, dielectrically isolated fabrication processes provides
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HS-6254RH
HS-6254RH
5962F9764101VEA
5962F9764101VEC
5962F9764101VXC
GDIP1-T16
HS0-6254RH-Q
HS1-6254RH
HS9-6254
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pin diodes radiation detector
Abstract: 2n2369 avalanche Semiconductor Nuclear Radiation Detector DIODE ga101 Semiconductor Radiation Detector radiation ionizing dose TID detector pin diodes nuclear radiation detector 1N829A 2N2369 2N3032
Text: MicroNote #050 by: Radiation Hardened Performance of Discrete Semiconductor Products Many system designs have required radiation hardness assurance for semiconductor products. In earlier years this primarily dealt with military programs, but has now evolved to
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micronote 103
Abstract: 2n2369 avalanche Semiconductor Nuclear Radiation Detector GA102 DIODE ga101 UM9441 radiation ionizing dose TID detector Semiconductor Radiation Detector high sensitive neutron PIN diode pin diode gamma detector
Text: MicroNote #050 by: Radiation Hardened Performance of Discrete Semiconductor Products Many system designs have required radiation hardness assurance for semiconductor products. In earlier years this primarily dealt with military programs, but has now evolved to
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proton rx 4000 watts power amplifier circuit diagram
Abstract: Hamamatsu r300 0812E H5783
Text: PHOTOMULTIPLIER TUBES Basics and Applications THIRD EDITION Edition 3a PHOTON IS OUR BUSINESS 2007 HAMAMATSU PHOTONICS K. K. ▲ Photomultiplier Tubes ▲ Photomultiplier Tube Modules © 2007 HAMAMATSU PHOTONICS K. K. Introduction Light detection technolgy is a powerful tool that provides deeper understanding of more sophisticated
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OTH9001E03a
proton rx 4000 watts power amplifier circuit diagram
Hamamatsu r300
0812E
H5783
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2N2369 avalanche
Abstract: Microsemi micronote series 050 Semiconductor Nuclear Radiation Detector DIODE ga101 pin diodes radiation detector UM9441 Microsemi Generic Diode nuclear radiation detector diode GA100 radiation ionizing dose TID detector
Text: Spring 1998 MicroNote Series 050 by Kent Walters, Microsemi Scottsdale Radiation Hardened Performance of Discrete Semiconductors Many system designs have required radiation hardness assurance for semiconductor products. In earlier years this primarily dealt with military
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1dz 2
Abstract: CDIP2-T18 CMM5114A CMM5114AD1DZ CMM5114AD3 CMM5114AK1DZ CMM5114AK3 CDFP
Text: CMM5114A Radiation Hardened, High Reliability, CMOS/SOS 1024 Word by 4-Bit LSI Static RAM November 1995 Features Pinouts 18 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835, CDIP2-T18 TOP VIEW • Radiation Hardened to 10K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg
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CMM5114A
MIL-STD-1835,
CDIP2-T18
1dz 2
CDIP2-T18
CMM5114A
CMM5114AD1DZ
CMM5114AD3
CMM5114AK1DZ
CMM5114AK3
CDFP
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HS1-2420RH-Q
Abstract: HS-2420RH
Text: HS-2420RH Radiation Hardened Fast Sample and Hold July 1995 Features Description • Maximum Acquisition Time The HS-2420RH is a radiation hardened monolithic circuit consisting of a high performance operational amplifier with its output in series with an ultra-low leakage analog switch
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HS1-2420RH-Q
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ultrasonic 40 khz transducer
Abstract: RCA photomultiplier mk-109 Ultrasonic Transducer application notes ultrasonic transducer excitation circuit lvdt accelerometer Schaevitz accelerometer lvdt accelerometer sensor ultrasonic transducer drive circuits LVDT strain gauge displacement transducer
Text: A substantial amount of information is available on signal conditioning for common transducers. Fortunately, most of these devices, which are used to sense common physical parameters, are relatively easy to signal condition. Further, most transducer-based measurement requirements are well
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LF412
LM329
AN-301
ultrasonic 40 khz transducer
RCA photomultiplier
mk-109
Ultrasonic Transducer application notes
ultrasonic transducer excitation circuit
lvdt accelerometer
Schaevitz accelerometer
lvdt accelerometer sensor
ultrasonic transducer drive circuits
LVDT strain gauge displacement transducer
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RCA photomultiplier
Abstract: 2n2222 h 331 mk-109 ultrasonic 40 khz transducer ultrasonic transducer excitation circuit ultrasonic transducer drive circuits Schaevitz accelerometer MK109 schematic ultrasonic distance meter LVDT sensor for aerospace
Text: National Semiconductor Application Note 301 January 1982 A substantial amount of information is available on signal conditioning for common transducers Fortunately most of these devices which are used to sense common physical parameters are relatively easy to signal condition Further
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ON semiconductor image sensor
Abstract: No abstract text available
Text: NOIS1SM0250A STAR250 250K Pixel Radiation Hard CMOS Image Sensor Features Applications • 512 x 512 active pixels ■ Satellites ■ 25 m pixel size ■ Spacecraft monitoring ■ 1 inch optical format ■ Nuclear inspection ■ Up to 30 frames per second fps at full resolution
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STAR250
10-bit
STAR250)
STAR250BK7)
NOIS1SM0250A/D
ON semiconductor image sensor
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Abstract: No abstract text available
Text: NOIS1SM0250A STAR250 250K Pixel Radiation Tolerant CMOS Image Sensor Features • • • • • • • • • • • • • • • • 512 x 512 Active Pixels 25 mm Pixel Size 1 inch Optical Format Up to 30 Frames per Second fps at Full Resolution
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UM9441
Abstract: FX-25
Text: PIN RADIATION DETECTORS Features • • • • • • High Photocurrent Sensitivity High Reliability Construction Fast Rise Time Wide Dynamic Range Hardness to Neutron Bombardment Low Operating Voltage Description Silicon PIN devices are effective detectors
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UM9441
UM9441
U21/2
FX-25
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Untitled
Abstract: No abstract text available
Text: PIN RADIATION DETECTORS Features • High Photocurrent Sensitivity • High Reliability Construction • Fast Rise Time • Wide Dynamic Range • Hardness to Neutron Bombardment • Low Operating Voltage Description Silicon PIN devices are effective detectors
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smd transistor 304
Abstract: cdfp4-f16
Text: HS-6254RH Semiconductor Radiation Hardened Ultra High Frequency NPN Transistor Array March 1998 Features Description • QML Qualified Per MIL-PRF-38535 Requirements The HS-6254RH is a Radiation Hardened array of five NPN transistors on a common substrate. One of our bonded wafer,
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HS-6254RH
MIL-PRF-38535
HS-6254RH
1320nm
1340nm
05A/cm2
smd transistor 304
cdfp4-f16
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Untitled
Abstract: No abstract text available
Text: HS-2420RH Semiconductor Radiation Hardened Fast Sam p le and Hold juiy 1995 Features Description • Maximum Acquisition Time The HS-2420RH is a radiation hardened monolithic circuit consisting of a high performance operational amplifier with its output in series with an ultra-low leakage analog switch
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HS-2420RH
HS-2420RH
05A/cm2
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