k3m6
Abstract: K3-M8 b92 diode semikron SKN 71 skn 220 diode skn 71 Semikron SKR 26 /12 Semikron SKR 71 SKR 870 heatsink SKN
Text: Summary of Types continued Avalanche Rectifier Diodes Type VRRM V(BR) VRSM min. V IFRMS A IFSM i2t sin. 10 ms 10 ms 180 25 °C 25 °C A A2s IFAV @ Tcase A °C Case Page SKa 1 1 300 1 700 3 1,15 451) 60 18 E 33 SKa 3 1 300 1 700 6,7 1,8 451) 180 162 E 34
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semikron thyristor skt 45
Abstract: skt 430 skt 430 f semikron skt 1250 semikron thyristor skt 16 semikron skt 760 semikron skt 140 skt 115 skt 45 skt 2500 semikron
Text: Current Ratings Limiting Values 1) Thyristor Type 1) Rthca °C/W Id A Id A SKT 10 K9 K5 K3 9,5 5,7 3,8 12 17 20 16,5 24 27 13 18,5 22 SKT 16 K5 K3 K 1,1 5,5 3,5 1,6 18 24 35 24 33 48 20 26 39 SKT 24 K5 K3 K 1,1 5,5 3,5 1,6 22 28 44 30 40 60 24 31 49 SKT 40
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Semikron k5 m6
Abstract: semikron skn 50/04 SKN 21 Semikron SKR 21 SKN 50/08 semikron skr 50/08 diode skn 5/ 08 semikron Semikron SKR 60 F 15 SKR 50 f5010
Text: VRSM VRRM IFRMS maximum values for continuous operation 100 A Fast Recovery Rectifier Diodes IFAV (sin. 180; Tcase = . . . ) 50 A (105 °C) 50 A (95 °C) SKN 2 F 50 SKR 2 F 50 trr = 200 ns V 400 SKN 2 F 50/04 SKN 2 F 50/04 UNF SKR 2 F 50/04 SKR 2 F 50/04 UNF
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Semikron k5 m6
semikron skn 50/04
SKN 21
Semikron SKR 21
SKN 50/08
semikron skr 50/08
diode skn 5/ 08 semikron
Semikron SKR 60 F 15
SKR 50
f5010
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Semikron SKR 21
Abstract: semikron skn 50/04 semikron skr 50/08 SKN 21 semikron skn 50/04 SKR 50 diode skn 21 diode skn 50/10 Semikron SKR 40 /12
Text: VRSM VRRM IFRMS maximum values for continuous operation 100 A Fast Recovery Rectifier Diodes IFAV (sin. 180; Tcase = . . . ) 50 A (105 °C) 50 A (95 °C) SKN 2 F 50 SKR 2 F 50 trr = 200 ns V 400 SKN 2 F 50/04 SKN 2 F 50/04 UNF SKR 2 F 50/04 SKR 2 F 50/04 UNF
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Semikron SKR 21
semikron skn 50/04
semikron skr 50/08
SKN 21
semikron
skn 50/04
SKR 50
diode skn 21
diode skn 50/10
Semikron SKR 40 /12
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SKN 21
Abstract: K1175 60F15 Semikron SKR 26 /12 60F14 60F12 Semikron SKR 21
Text: VRSM VRRM Fast Recovery Rectifier Diodes IFRMS maximum values for continuous operation 120 A IFAV (sin. 180; Tcase = 85 °C) 75 A SKN 60 F SKR 60 F trr = 700 ns V 1200 SKN 60 F 12 SKR 60 F 12 1400 SKN 60 F 14 SKR 60 F 14 1500 SKN 60 F 15 SKR 60 F 15 Symbol Conditions
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SKN 21
K1175
60F15
Semikron SKR 26 /12
60F14
60F12
Semikron SKR 21
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SKN60
Abstract: Semikron SKR 21 Semikron SKR 60 /17 Semikron SKR 40 /12 K1175 60F15 Semikron SKN 21 60F12 SKR 21
Text: VRSM VRRM Fast Recovery Rectifier Diodes IFRMS maximum values for continuous operation 120 A IFAV (sin. 180; Tcase = 85 °C) 75 A SKN 60 F SKR 60 F trr = 700 ns V 1200 SKN 60 F 12 SKR 60 F 12 1400 SKN 60 F 14 SKR 60 F 14 1500 SKN 60 F 15 SKR 60 F 15 Symbol Conditions
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SKN60
Semikron SKR 21
Semikron SKR 60 /17
Semikron SKR 40 /12
K1175
60F15
Semikron
SKN 21
60F12
SKR 21
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semikron SKa 6/20
Abstract: diode SKN SKN 130/12 SKR 130/12 Semikron 240/04 diode data semikron skn 50/04 Semikron sk 1 SEMIKRON SKN 130/12 SKR 130/12 SKN 50/08 SKN 21 DIODE diode ska 6/20
Text: VRSM VRRM Rectifier Diodes IFRMS maximum values for continuous operation 3A 6,7 A SK 1 SKa 1 IFAV (sin. 180; Tamb = 45 °C) 1,15 A 1,8 A V 1000 1200 1400 1600 Types Cmax. µF Rmin. Ω Types Cmax. µF Rmin. Ω SK 1/10 SK 1/12 SK 1/14 SK 1/16 500 400 300
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Nm/35
Nm/22
semikron SKa 6/20
diode SKN
SKN 130/12 SKR 130/12
Semikron 240/04 diode data
semikron skn 50/04
Semikron sk 1
SEMIKRON SKN 130/12 SKR 130/12
SKN 50/08
SKN 21 DIODE
diode ska 6/20
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semikron thyristor skt 16
Abstract: semikron thyristor skt 45 semikron skt 140 semikron skt 340 skt 450 semikron thyristor semikron rc skt semikron b 11 K3-M8 semikron skt 24
Text: 7K\ULVWRUV HDWXUHV 7\SLFDO $SSOLFDWLRQV 7KUHDGHG VWXG WK\ULVWRUV +HUPHWLF PHWDO FDVHV ZLWK JODVV LQVXODWRUV '& PRWRU FRQWURO HJ IRU PDFKLQH WRROV *ODVV WR PHWDO VHDO $& FRQWUROOHUV HJ IRU WHPSHUDWXUH FRQWURO 7KUHDGHG VWXGV ,62 00 [
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FRPSRQH31
semikron thyristor skt 16
semikron thyristor skt 45
semikron skt 140
semikron skt 340
skt 450
semikron thyristor
semikron rc
skt semikron b 11
K3-M8
semikron skt 24
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SKNa 26
Abstract: SKR 870 diode SKNa b 250 c 2200/3500 rectifier skr 320-P diode skn 71 849B semikron 28 diode SKN a 26/17 semikron SKa 6/20
Text: 5HFWLILHU 'LRGHV HDWXUHV 7\SLFDO $SSOLFDWLRQV 6PDOO SODVWLF SDFNDJHG GLRGHV 5HYHUVH YROWDJHV XS WR 9 $OOSXUSRVH UHFWLILHU GLRGHV $[LDO OHDG GLRGHV WDSHG IRU DXWRPDWLF LQVHUWLRQ 6QXEEHU GLRGHV 7KUHDGHG VWXG GLRGHV 5HYHUVH YROWDJHV XS WR 9
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gw 340 diode
Abstract: k5m6 dfk 820
Text: DVW 5HFWLILHU 'LRGHV )HDWXUHV 7\SLFDO $SSOLFDWLRQV 'LRGHV LQ 7 7 6PDOO UHFRYHUHG FKDUJH 6ZLWFKHG PRGH SRZHU VXSSOLHV 6RIW UHFRYHU\ 8OWUDVRQLF JHQHUDWRUV ,QYHUWHUV 79 VHWV 7KUHDGHG VWXG GLRGHV 6PDOO UHFRYHUHG FKDUJH 6RIW UHFRYHU\
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Schneider NSX 400 F
Abstract: LGL37060D33 S4324 S434504 Schneider BREAKER CONTACT RESISTANCE S434201 S434201BS schneider compact NS
Text: PowerPact H-, J-, and L-Frame Circuit Breakers Catalog 0611CT1001 R05/15 2015 Class 0611 CONTENTS Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Page Catalog Numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
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0611CT1001
R05/15
R05/15
R03/15
Schneider NSX 400 F
LGL37060D33
S4324
S434504
Schneider BREAKER CONTACT RESISTANCE
S434201
S434201BS
schneider compact NS
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irfb4115
Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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element-14
F155-6A
F155-10A
F165-15A
F175-25A
irfb4115
BTY79 equivalent
diode skn 21-04
marking CODE W04 sot-23
bbc 598 479 DIODE
mw 137 600g
TFK 401 S 673
Vishay Telefunken tfk transistor
INFINEON transistor marking W31
JYs marking transistor
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Semikron k5 m6
Abstract: No abstract text available
Text: 15E 0 I SEMIKRON INC fll3bt>71 0001515 t | -,-[ V rsm V rrm Î- \d t /c r V drm V V /|x s V 500 700 400 600 900 800 1100 1300 1000 1200 1500 1700 1400 1600 200 200 600 200 500 500 200 500 1000 1000 200 1000 Sin. 180; Tcase “ .) Itsm Tvj = Tvj =
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SKT10
SKT16
SKT24
SKT130
SKT160'
P1/120
SKT80
O-209
T0-208
Semikron k5 m6
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Semikron SKR 21
Abstract: No abstract text available
Text: s e MIKRO n V rsm Ifrm s V rrm Fast Recovery Rectifier Diodes maximum values for continuous operation 120 A Ifa v (sin. 180; Tcase = 85 °C) 75 A trr SKN 60 F = 700 ns $ V 1200 SKN 60 F 12 SKR 60 F 12 1400 SKN 60 F 14 SKR 60 F 14 1500 SKN 60 F 15 SKR 60 F 15
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000b3b4
fll3bb71
fil3bb71
Semikron SKR 21
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Untitled
Abstract: No abstract text available
Text: s e MIKROn V hsm Ifrm s maximum values for continuous operation V rrm 100 A Fast Recovery Rectifier Diodes ÌFAV (sin. 180; Tease = • •• ) 50 A (105 °C) | SKN 2 F 50 SKR 2 F 50 50 A (95 °C) tri = 200 ns $ V $ 400 SKN 2 F 50/04 SKN 2 F 50/04 UNF SKR 2 F 50/04
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SKT10/04C
Abstract: No abstract text available
Text: _J1E I> • fll3bti71 G0034bfci MAT S E rîIK R 0 iT i n c ' V rsm V rrm V drm *L Itrms (maximum values for continuous operation) 30 A Vdt/or | 40 A | 50 A ItAV (sin. 180; Tease = . ,°C) V V V/|1S 500 700 400 600 900 800 200 200 500 200 500 500 200 500
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fll3bti71
G0034bfci
SKT16/04C
SKT10/08D
SKT10/10D
G347G
B3-11
0DQ3471
O-208
SKT10/04C
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Untitled
Abstract: No abstract text available
Text: A13LL71 V rsm V rrm Vdrm V 500 700 900 1100 1300 V 400 600 800 1000 1200 1500 1700 1400 1600 V/ JS 500 500 500 500 500 1000 1000 1000 Sin. It s m Tvj 180; (Tease = • • • Tvj = = = = tgd Tvj = 25 °C; tgr Vd T Vj i2t T vj 25 °C; 130 °C; 25 °C; 130 °C;
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A13LL71
613bb71
GDD474A
613bb71
B3-11
SKT16
SKT24
BS3934
SO-35A
O-208
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skt16
Abstract: No abstract text available
Text: s e m ik r o n V rsm V rrm V drm \d t /c , V V 500 400 600 800 1000 500 500 500 500 1200 500 1000 1000 700 900 1100 1300 1500 1700 ItaV sin. 180; Tease " . •°C 25 A (74 °C) 32 A (72 °C) SKT 16/04 D SKT 24/04 D _ SKT 10/06 D SKT 16/06 D* SKT 10/08 D
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B3-10
B3-11
SKT16
SKT24
SKT10
BS3934:
SKT40
skt16
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11tA0A12
A025A
A0290
U0U55
A0291
A0292
A0305
A0306
A0A56
A0A59
aeg diode Si 61 L
aeg diodes D6
SGS Transistors
BC23B
SILICONIX U315
MZ306
BY126
bcv59
ac128
2N3680
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Triac TAG 9022
Abstract: Transistor TEO 1279 DIL Reed relay RS -349-399 AKO 544 271 tda 7977 Triac TAG 9031 RS 434-396 TV SHARP IC TDA 9381 PS hall marking code A04 px625
Text: Issued November 1986 7376 r Contents list and semiconductor device type index data Data library contents Issue Date Subject Title Number Communications Equipment B.T. telephone connection system Digital compact paging system 'Minimaster 3' 2+10 telephone switching system
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