30g 122 igbt
Abstract: SEMIKRON type designation PCIM 176 display CALCULATION SemiSel 3.1 PCIM 176 pure sinus inverter circuit 60749 IGBT cross reference semikron CALCULATION SemiSel PCIM 95
Text: SEMiX - Technical Explanations SEMiX ® IGBT Modules & Bridge Rectifier Family Technical Explanations Version 2.0 / January 2008 Christian Daucher 1 Version 2.0 2008-01-22 by SEMIKRON SEMiX® - Technical Explanations Content 1 Introduction . 3
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KG3B-35-5
Abstract: semix igbt GAL semix type Designation System KG3B semix igbt modules bridge MKT .01 R 46 MKP SEMIKRON type designation wacker KG3B-35
Text: Modules – Explanations – SEMiX SEMiX IGBT Modules Forward characteristic with minimised temperature coefficient • Features • New module platform for optimum connection between driver and intermediate circuit • Based on well-tried SEMIKRON module technologies
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17-mm-high,
KG3B-35-5
semix igbt GAL
semix type Designation System
KG3B
semix igbt modules bridge
MKT .01
R 46 MKP
SEMIKRON type designation
wacker
KG3B-35
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PCIM 176
Abstract: PCIM 95 CALCULATION SemiSel 30g 122 igbt PCIM 176 display IGBT rectifier theory IGBT cross reference semikron pure sinus inverter circuit makrolon 9425 T100
Text: SEMiX - Technical Explanations SEMiX ® IGBT Modules & Bridge Rectifier Family Technical Explanations Version 2.0 / January 2008 Christian Daucher 1 Version 2.0 2008-01-22 by SEMIKRON SEMiX® - Technical Explanations Content 1 Introduction . 3
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IGBT Thyristor
Abstract: semikron B6C POWER MODUL SEMIKRON weichverguss SEMIPONT semikron thyristor Gleichrichter
Text: Leistungselektronik Metamorphose Bleifreie Brückengleichrichter für neue Anwendungen bis 230 A In der Metamorphose vollzieht sich die Umwandlung einer Grundform zwecks Anpassung an eine neue Funktion. Mit Semipont 7 hat SEMIKRON diese Wandlung bei den Brückengleichrichtern vollzogen.
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SKM 75 Gb 124 IGBT
Abstract: SKM 400 gal 124 IGBT SKM 25 GD SKM 40 GD 121 D SKM 40 GD 101 D IGBT cross reference semikron skm 40 gd 121 skm 75 gb 101 d skm 40 gd 121 skm 40 gb 124 d skm 50 gb 100 d
Text: SEMITRANS IGBT Modules Packaging, ESD Protection and Mounting Hardware * The SEMITRANS IGBT Modules are electrostatic-sensitive devices ESD). They are ESD-protected and packaged in SEMIBOX, i.e. corrugated paper boxes with L x W x H = 190 x 140 x 30 mm resp. 53 mm hight. See SEMIKRON
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Untitled
Abstract: No abstract text available
Text: SKiM455GD12T4D1 '- KL M6P @,3+99 21.+*;<9+ 9=+-<A<+F Absolute Maximum Ratings Symbol Conditions IGBT 567I 'O ) M6 $6 'O ) JLQ M6 $6DV JKQQ 5 QQ E '.+019<,S ) TQ M6 UQL E JULQ E Y KQ 5 JQ ^9 '.+019<,S ) KL M6 K`L E '.+019<,S ) TQ M6 KJL E aQQ E $6DV ) UN$6WXV
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SKiM455GD12T4D1
18DVI:
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semikron SKa 6/20
Abstract: diode SKN SKN 130/12 SKR 130/12 Semikron 240/04 diode data semikron skn 50/04 Semikron sk 1 SEMIKRON SKN 130/12 SKR 130/12 SKN 50/08 SKN 21 DIODE diode ska 6/20
Text: VRSM VRRM Rectifier Diodes IFRMS maximum values for continuous operation 3A 6,7 A SK 1 SKa 1 IFAV (sin. 180; Tamb = 45 °C) 1,15 A 1,8 A V 1000 1200 1400 1600 Types Cmax. µF Rmin. Ω Types Cmax. µF Rmin. Ω SK 1/10 SK 1/12 SK 1/14 SK 1/16 500 400 300
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Nm/35
Nm/22
semikron SKa 6/20
diode SKN
SKN 130/12 SKR 130/12
Semikron 240/04 diode data
semikron skn 50/04
Semikron sk 1
SEMIKRON SKN 130/12 SKR 130/12
SKN 50/08
SKN 21 DIODE
diode ska 6/20
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SEMIX553GB128D
Abstract: No abstract text available
Text: SEMiX553GB128Ds Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 533 A Tc = 80 °C 379 A 300 A ICnom ICRM SEMiX 3s SPT IGBT Modules ICRM = 2xICnom 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C 421
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SEMiX553GB128Ds
E63532
SEMIX553GB128D
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din 7985
Abstract: SCREW din 7985 DIN 933 semipack 1 din 934 hexagonal nuts din 7985 B 31947300 31823300 semikron semipack skkt 106B skn 4570
Text: 14.9 Assembly Hardware Mounting bars 8 x 4 mm fitting into the slots of heatsink P3 Ident No. SEMIPACK 30 11 5720 30 02 5330 30 02 5490 30 02 5390 30 12 6480 Semipack 1/2/3/4 3 Semipack 1 4 Semipack 1 3 Semipack 2 3 Semipack 3 No. 30 11 5720 No. 30 02 5490
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Untitled
Abstract: No abstract text available
Text: SEMIKRON INC 3bE D • fll3bh71 OOGStiST 2 « S E K G SEMIKRON Ifrm s maximum values fo r continuous operation V rsm 5A V rrm | I f a v (sin. 10A SKN 2,5 SKN 5 180;Tamb = 45 °C) V 2,5 A 5A 200 400 800 1200 1600 SKN 2,5/02 SKN 2,5/04 SKN 2,5/08 SKN 5/02
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fll3bh71
fll3bb71
013bb71
SKN20
SO-31
SO-10
DO-203
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semibox
Abstract: 32020200 M6x12 31949100 M6X20 32711300 122d 31947300 SEMIKRON book
Text: SEMITRANS IGBT Modules Packaging, ESO Protection and Mounting Hardware The SEMITRANS IGBT Modules are electrostatic-sensitive devices ESD . They are ESD-protected and packaged in SEMIBOX, i.e. corrugated paper boxes with L x W x H = 190 x 140 x 30 mm resp. 53 mm hight. See SEMIKRON
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Untitled
Abstract: No abstract text available
Text: seMIKROn Absolute Maximum Ratings Symbol VcES VcGR lc ICM V ges Ptot Tj, Tstg Vsol humidity climate Values Conditions ' R ge = 20 k£2 Tcase = 25/80 °C Tcase = 25/80 °C; tp Units = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 1700
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case059
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B647
Abstract: tig ac inverter circuit tig ac inverter circuit 180 skm100gb 100
Text: SEMIKRON Absolute Maximum Ratings Symbol Values Conditions ' Units AC, 1 min. DIN 40 040 DIN IEC68T.1 1700 1700 110/75 220/150 ±20 625 - 4 0 . . .+150 125 4000 Class F 55/150/56 inverse Diode 81 Tcase= 25/80 »C Teas = 25/80 “C; tp —1 ms I fm = - Icm
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IEC68T
B647
tig ac inverter circuit
tig ac inverter circuit 180
skm100gb 100
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Untitled
Abstract: No abstract text available
Text: seMIKROn zurück Absolute Maximum Ratings Values Symbol Conditions 1 VcES VcGR Units 1700 1700 220/150 440 / 300 ±20 1250 -40 . +150 125) 4000 = 20 Toase = 25/80 °C Toase = 25/80 °C; tp = 1 ms R ge lc IcM V ges Ptot Tj, (Tstg) V¡sol humidity climate
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300GA720
M3000A17
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SK 6211
Abstract: No abstract text available
Text: seMIKROn Absolute Maximum Ratings Symbol VcES VcGR lc ICM V ges Pfot Tj, Tstg Visol humidity climate Values Conditions ' Rge = 20 k£2 Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms p e r IG BT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode
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Untitled
Abstract: No abstract text available
Text: seMIKROn Absolute Maximum Ratings Symbol Conditions ' VcES VcGR lc = 20 k£2 T c a s e = 25/80 ICM Tcase Values Units Rge °C = 25/80 °C; tp = 1 ms V ges P to t p e r IG B T , Tcase = 25 °C humidity climate AC, 1 min. DIN 40 040 DIN IEC 68 Inverse Diode
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40ical
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Semikron k5 m6
Abstract: No abstract text available
Text: 15E 0 I SEMIKRON INC fll3bt>71 0001515 t | -,-[ V rsm V rrm Î- \d t /c r V drm V V /|x s V 500 700 400 600 900 800 1100 1300 1000 1200 1500 1700 1400 1600 200 200 600 200 500 500 200 500 1000 1000 200 1000 Sin. 180; Tcase “ .) Itsm Tvj = Tvj =
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180/rec.
SKT10
SKT16
SKT24
SKT130
SKT160'
P1/120
SKT80
O-209
T0-208
Semikron k5 m6
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TO-208AB
Abstract: SKT24-04C SKT24-06C SKT24/12C SKT24-08C SKT16 semikron skt24 semikron b3 skt24/06c SKT 16/12c
Text: 15E 0 I SEMIKRON INC fll3bt>71 0001515 t | -,-[ V rsm V rrm Î- \d t /c r V drm V V /|x s V 500 700 400 600 900 800 1100 1300 1000 1200 1500 1700 1400 1600 200 200 600 200 500 500 200 500 1000 1000 200 1000 Sin. 180; Tcase “ .) Itsm Tvj = Tvj =
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fll3bb71
SKT24/04
SKT24/06
SKT24/08
SKT10/10D
B3-10
B3-11
BS3934
SO-35A
TO-208AB
SKT24-04C
SKT24-06C
SKT24/12C
SKT24-08C
SKT16
semikron skt24
semikron b3
skt24/06c
SKT 16/12c
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IEC192-2
Abstract: SKMD200E TBA80c SKKD50E04 SKKD50E semikron skmd 100
Text: SIE D • Ö13bb71 GODBMSS Ihh « S E K G s e m ik r d n ~SEMIKRON INC V rsm V rrm Ifrms maximum value for continuous operation 110 A | 325 A V Ifav (sin. 180;Tease = 85°C; 50 Hz) 207 A 48,5 A Ultrafast Epitaxial Diode Modules SEMIPACK 1 SKKD 50 E SKND 50 E
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13bb71
SKMD200E
SKKD50
2450LJ-
B2-15
fll3bb71
0QD3M30
1111inâ
1111ii
SKND50E
IEC192-2
TBA80c
SKKD50E04
SKKD50E
semikron skmd 100
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Untitled
Abstract: No abstract text available
Text: SEMIKRON V rsm V rrm Ifrms maximum value for continuous operation 110 A | 325 A V Ifav (sin. 180; T case = 85 °C; 50 Hz) 48,5 A 207 A Ultrafast Epitaxial Diode Modules 100 SKKD 50 E 01 SKND 50 E 01 SKMD 202 E 01 SKND 202 E 01 200 SKKD 50 E 02 SKND 50 E 02 SKMD 202 E 02 SKND 202 E 02
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O-240
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fr 300f diode
Abstract: 123d
Text: SEMIKRON V r sm I fr m s m a x im u m v a lu e fo r c o n tin u o u s o p e ra tio n , Tease = 2 5 °C V r rm 664 A I fa v (s in 180 ; T case = 8 5 °C ; 5 0 Hz) SEMIPACK Fast Diode1) Modules V 423 A SKKE 600 F 1000 SKKE 600 F 10 P relim inary Data 1200
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P16/300F)
KE600F1S
fr 300f diode
123d
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0496B
Abstract: No abstract text available
Text: SEMIKRON V r sm I f r m s m a x im u m v a lu e s fo r c o n tin u o u s o p e ra tio n V r rm 450 A SEMIPACK 2 Fast Diode1* Modules Ifa v (s in . 180 ; T case = 8 5 °C ; 5 0 Hz) V 220 A SKKE 301 F 1000 SKKE 301 F 10 1100 SKKE 301 F 11 1200 SKKE 301 F 12
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30zed,
0496B
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0496B
Abstract: Diode semikron skke 120
Text: SEMIKRON V r sm I f r m s m a x im u m v a lu e s fo r c o n tin u o u s o p e ra tio n V r rm 220 A SEMIPACK 2 Fast Diode Modules I fav (s in . 180 ; Tease = 6 5 °C ; 5 0 Hz) V 140 A SKKE 120 F 1500 S K K E 120 F 15 1600 S K K E 120 F 16 Sym bol C ond itio ns
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SKT10/04C
Abstract: No abstract text available
Text: _J1E I> • fll3bti71 G0034bfci MAT S E rîIK R 0 iT i n c ' V rsm V rrm V drm *L Itrms (maximum values for continuous operation) 30 A Vdt/or | 40 A | 50 A ItAV (sin. 180; Tease = . ,°C) V V V/|1S 500 700 400 600 900 800 200 200 500 200 500 500 200 500
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fll3bti71
G0034bfci
SKT16/04C
SKT10/08D
SKT10/10D
G347G
B3-11
0DQ3471
O-208
SKT10/04C
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