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    SEMIX151GD126HDS Price and Stock

    SEMIKRON SEMIX151GD126HDS

    Igbt Module, Six, 1.2Kv, 168A; Continuous Collector Current:168A; Collector Emitter Saturation Voltage:1.7V; Power Dissipation:-; Operating Temperature Max:125°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Semikron SEMIX151GD126HDS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SEMIX151GD126HDS Bulk 4
    • 1 $201.42
    • 10 $195.78
    • 100 $184.51
    • 1000 $184.51
    • 10000 $184.51
    Buy Now
    Richardson RFPD SEMIX151GD126HDS 1
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    SEMIKRON SEMIX151GD126HDS 27890731

    Module: IGBT; transistor/transistor; IGBT three-phase bridge
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SEMIX151GD126HDS 27890731 1
    • 1 $705.6
    • 10 $520.27
    • 100 $482.31
    • 1000 $482.31
    • 10000 $482.31
    Get Quote

    SEMIX151GD126HDS Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SEMIX151GD126HDS Semikron Trench IGBT Modules Original PDF

    SEMIX151GD126HDS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SEMiX151GD126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 168 A Tc = 80 °C 119 A 100 A ICnom ICRM SEMiX 13 Trench IGBT Modules SEMiX151GD126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V


    Original
    PDF SEMiX151GD126HDs E63532

    Untitled

    Abstract: No abstract text available
    Text: SEMiX151GD126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 168 A Tc = 80 °C 119 A 100 A ICnom ICRM SEMiX 13 tpsc Trench IGBT Modules ICRM = 2xICnom 200 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C


    Original
    PDF SEMiX151GD126HDs E6353SEMiX151GD126HDs

    Untitled

    Abstract: No abstract text available
    Text: SEMiX151GD126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 168 A Tc = 80 °C 119 A 100 A ICnom ICRM SEMiX 13 Trench IGBT Modules ICRM = 2xICnom 200 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C


    Original
    PDF SEMiX151GD126HDs E63532

    SEMiX151GD126HDs

    Abstract: No abstract text available
    Text: SEMiX151GD126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 168 A Tc = 80 °C 119 A 100 A ICnom ICRM SEMiX 13 Trench IGBT Modules ICRM = 2xICnom 200 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C


    Original
    PDF SEMiX151GD126HDs E63532 SEMiX151GD126HDs

    SEMIX353GB126V1

    Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1
    Text: Product Change Notification product group: SEMiX no.: 09-039 Change of SEMiX housing subject of change: change of SEMiX housing, namely form of nuts at the main terminals, housing material, one-piece housing, mounting domes for driver assembly and spring slots


    Original
    PDF SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1