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    SEMIX302GB12 Search Results

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    SEMIX302GB12 Price and Stock

    SEMIKRON SEMIX302GB12VS

    Igbt Module, Dual, 1.2Kv, 448A; Continuous Collector Current:448A; Collector Emitter Saturation Voltage:1.75V; Power Dissipation:-; Operating Temperature Max:125°C; Igbt Termination:Press Fit; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Semikron SEMIX302GB12VS
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    Newark SEMIX302GB12VS Bulk 6
    • 1 -
    • 10 $183.49
    • 100 $183.49
    • 1000 $183.49
    • 10000 $183.49
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    SEMIKRON SEMIX302GB128D

    Igbt 4 (Trench) |Semikron SEMIX302GB128D
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    Newark SEMIX302GB128D Bulk 6
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    SEMIKRON SEMIX302GB12E4S

    Igbt Module, Dual, 1.2Kv, 463A; Continuous Collector Current:463A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:-; Operating Temperature Max:125°C; Igbt Termination:Press Fit; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Semikron SEMIX302GB12E4S
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    Newark SEMIX302GB12E4S Bulk 6
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    • 10 $151.98
    • 100 $138.95
    • 1000 $138.95
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    Richardson RFPD SEMIX302GB12E4S 1
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    SEMIKRON SEMIX302GB12E4S 27890120

    Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SEMIX302GB12E4S 27890120 1
    • 1 $453.09
    • 10 $357.48
    • 100 $322.15
    • 1000 $322.15
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    SEMIKRON SEMIX302GB12VS 27890121

    Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SEMIX302GB12VS 27890121 1
    • 1 $542.46
    • 10 $428.15
    • 100 $385.54
    • 1000 $385.54
    • 10000 $385.54
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    SEMIX302GB12 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SEMiX302GB126HD Semikron Trench IGBT Modules Original PDF
    SEMIX302GB126HD Semikron Trench IGBT Modules Original PDF
    SEMiX302GB126HDs Semikron Trench IGBT Modules Original PDF
    SEMiX302GB128D Semikron SPT IGBT Modules Original PDF
    SEMIX302GB128DS Semikron SPT IGBT Modules Original PDF
    SEMIX302GB12T4S Semikron Trench IGBT Modules Original PDF

    SEMIX302GB12 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMiX302GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX302GB12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V


    Original     		SEMiX302GB12E4s SEMiX302GB12E4s E63532 PDF

    CS 5800

    Abstract: No abstract text available
    Text: SEMiX302GB12Vs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 448 A Tc = 80 °C 342 A 300 A ICnom ICRM SEMiX 2s VGES tpsc Tj ICRM = 3xICnom VCC = 600 V VGE ≤ 15 V VCES ≤ 1200 V 900 A -20 . 20 V 10


    Original     		SEMiX302GB12Vs SEMiX302GB12Vs E63532 CS 5800 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMiX302GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C


    Original     		SEMiX302GB12E4s E63532 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMiX302GB12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 463 A Tc = 80°C 356 A 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 356 A Tc = 80°C 266 A 900 A -40 . 175 °C ICRM = 3xICnom VGES


    Original     		SEMiX302GB12T4s PDF

    SEMiX302GB12E4s

    Abstract: No abstract text available
    Text: SEMiX302GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX302GB12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V


    Original     		SEMiX302GB12E4s E63532 SEMiX302GB12E4s PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMiX302GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 311 A Tc = 80 °C 218 A 200 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 400 A -20 . 20 V 10 µs -40 . 150 °C


    Original     		SEMiX302GB126HDs E63532 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMiX302GB12Vs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 448 A Tc = 80 °C 342 A 300 A ICnom ICRM SEMiX 2s VGES tpsc Tj ICRM = 3xICnom VCC = 720 V VGE ≤ 15 V VCES ≤ 1200 V 900 A -20 . 20


    Original     		SEMiX302GB12Vs SEMiX302GB12Vs E63532 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMiX302GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 311 A Tc = 80 °C 218 A 200 A ICnom ICRM SEMiX 2s tpsc Trench IGBT Modules ICRM = 2xICnom 400 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C


    Original     		SEMiX302GB126HDs E6353SEMiX302GB126HDs PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMiX302GB12Vs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 448 A Tc = 80 °C 342 A 300 A ICnom ICRM SEMiX 2s ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 356 A Tc = 80 °C


    Original     		SEMiX302GB12Vs E63532 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMiX302GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 311 A Tc = 80 °C 218 A 200 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX302GB126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V


    Original     		SEMiX302GB126HDs E63532 PDF

    SEMiX302GB12E4s

    Abstract: SEMIX302GB12
    Text: SEMiX302GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


    Original     		SEMiX302GB12E4s E63532 SEMiX302GB12E4s SEMIX302GB12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMiX302GB128Ds Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 283 A Tc = 80°C 201 A 300 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 231 A Tc = 80°C 159 A ICRM = 2xICnom VGES SEMiX 2s SPT IGBT Modules


    Original     		SEMiX302GB128Ds PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMiX302GB12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s tpsc Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


    Original     		SEMiX302GB12T4s E63532 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMiX302GB12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s tpsc Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


    Original     		SEMiX302GB12T4s E63532 PDF

    K 250 diode

    Abstract: No abstract text available
    Text: SEMiX302GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


    Original     		SEMiX302GB12E4s E63532 K 250 diode PDF

    DIODE 35

    Abstract: No abstract text available
    Text: SEMiX302GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 311 A Tc = 80 °C 218 A 200 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 400 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C


    Original     		SEMiX302GB126HDs E63532 DIODE 35 PDF

    SEMIX302GB128DS

    Abstract: diode 57
    Text: SEMiX302GB128Ds Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 283 A Tc = 80 °C 201 A 150 A ICnom ICRM SEMiX 2s SPT IGBT Modules SEMiX302GB128Ds VGES tpsc Tj ICRM = 2xICnom VCC = 600 V VGE ≤ 20 V VCES ≤ 1200 V


    Original     		SEMiX302GB128Ds E63532 SEMIX302GB128DS diode 57 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMiX302GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 311 A Tc = 80°C 218 A 400 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 292 A Tc = 80°C 202 A ICRM = 2xICnom VGES SEMiX 2s Trench IGBT Modules


    Original     		SEMiX302GB126HDs PDF

    SEMIX302GB128DS

    Abstract: C201A SEMIX302GB12
    Text: SEMiX302GB128Ds Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 283 A Tc = 80 °C 201 A 150 A ICnom ICRM SEMiX 2s tpsc SPT IGBT Modules ICRM = 2xICnom 300 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C


    Original     		SEMiX302GB128Ds E63532 SEMIX302GB128DS C201A SEMIX302GB12 PDF

    SEMIX353GB126V1

    Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1
    Text: Product Change Notification product group: SEMiX no.: 09-039 Change of SEMiX housing subject of change: change of SEMiX housing, namely form of nuts at the main terminals, housing material, one-piece housing, mounting domes for driver assembly and spring slots


    Original     		SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1 PDF