Untitled
Abstract: No abstract text available
Text: TOSHIBA GATE TURN-OFF THYRISTOR. SEMICONDUCTOR T O SH IB A TECHNICAL SG4000GXH26 DATA LOW SNUBBER TYPE SG4000GXH26J INVERTER APPLICATION • • • • • Repetitive Peak Off-State Voltage R.M.S On-State Current Peak Turn-Off Current Critical Rate of Rise of On-State Current
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SG4000GXH26
SG4000GXH26J
SG4000GXH26
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SG4000GXH26
Abstract: No abstract text available
Text: TOSHIBA GATE TURN-OFF THYRISTOR SEMICONDUCTOR TO SHIBA TECHNICAL SG4000GXH26 DATA LOW SNUBBER TYPE SG4000GXH26 Unit in mm INVERTER APPLICATION 4500V *T (RMS) = Í900A I T G Q M = 4000A di / dt = 500A / //s dv/dt=1000V / jus Repetitive Peak Off-State Voltage
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SG4000GXH26
SG4000GXH26)
SG4000GXH26
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Untitled
Abstract: No abstract text available
Text: T O SH IB A SG4000GXH26G TOSHIBA GATE TURN-OFF THYRISTOR LOW SNUBBER TYPE SG4000GXH26G Unit in mm INVERTER APPLICATION Repetitive Peak off-state Voltage V d RM —4500V Note 1 R.M.S On-State Current !t (RMS) = 12(>0A (Tf = 76°C) Peak Turn-Off Current XTGQM —4000A
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SG4000GXH26G
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Untitled
Abstract: No abstract text available
Text: TOSHIBA GATE TURN-OFF THYRISTOR SEMICONDUCTOR TOSHIBA TECHNICAL SG4000GXH26G DATA LOW SNUBBER TYPE SG4000GXH26G Unit in mm INVERTER APPLICATION Repetitive Peak off-state Voltage V d RM = 4500V (Note 1) R.M.S On-State Current IT (RMS) = 1200A (Tf = 76°C)
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SG4000GXH26G
SG4000GXH26G)
SG4000GXH26G
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sg4000GXH26G
Abstract: No abstract text available
Text: TOSHIBA SG4000GXH26G TOSHIBA GATE TURN-OFF THYRISTOR LOW SNUBBER TYPE SG4000GXH26G INVERTER APPLICATION Repetitive Peak off-state Voltage : V d r m = 4500 V Note 1 R.M.S On-State Current : I t (RMS) = 1200 A (Tf = 76°C) Peak Turn-Off Current : It GQM — 4000 A
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SG4000GXH26G
sg4000GXH26G
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SG4000GXH26
Abstract: inverter lg ig
Text: T O S H IB A SG4000GXH26 TOSHIBA GATE TURN-OFF THYRISTOR LOW SNUBBER TYPE SG4000GXH26 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage R.M.S On-State Current Peak Turn-Off Current Critical Rate of Rise of On-State Current Critical Rate of Rise of Off-State Voltage
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SG4000GXH26
Rat100
SG4000GXH26
inverter lg ig
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SG4000GXH26G
Abstract: No abstract text available
Text: TOSHIBA GATE TURN-OFF THYRISTOR. SEMICONDUCTOR T O SH IB A TECHNICAL SG4000GXH26G DATA LOW SNUBBER TYPE SG4000GXH26G Unit in mm INVERTER APPLICATION • • t • • Repetitive Peak off-state Voltage Vj)RM = 4500V (Note 1) R.M.S On-State Current lT(RMS) = 1200A(Tf=76°C)
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SG4000GXH26G
SG4000GXH26G)
SG4000GXH26G
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Untitled
Abstract: No abstract text available
Text: TOSHIBA LOW SNUBBERTYPE SG4000GXH26 Unit in mm Inverter Application • Repetitive Peak Off-State Voltage: • R.M.S. On-State Current: • Peak Turn-Off Current: • Critical Rate of Rise of On-State Current: • Critical Rate of Rise of Off-State Voltage:
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SG4000GXH26
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snubber diode
Abstract: SG2500GX gto sg3000gxh24 SG3000GXH24 free diode 1000GXHH22 800EXH21 SG3000GXH 100GXHH21 SG4000GXH26G
Text: 8. SELECTION GUIDE FOR GTO, FREE WHEELING DIODE AND SNUBBER DIODE GTO SNUBBER DIODE FREE WHEELING DIODE SG600GXH26 100GXHH21 100FXFG/H11 or 100GXHH2I SG800W24 200EXG/H11 100EXG/H11 SG1000GXH26 100GXHH21 100FXFG/H11 or 100GXHH21 SG1200EX24 300EXH21 100EXG/H11
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SG600GXH26
SG800W24
SG1000GXH26
SG1200EX24
SG1500EX24
SG2000EX24
SG2000EX26
SG2000GXH26
SG2200GXH24
SG2500EX24
snubber diode
SG2500GX
gto sg3000gxh24
SG3000GXH24
free diode
1000GXHH22
800EXH21
SG3000GXH
100GXHH21
SG4000GXH26G
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500EXH21
Abstract: 100gxhh21 SG3000GXH24 800A 75m gate turn off thyristors TOSHIBA 100GXHH21 800GXHH21 800GX SG800GXH24
Text: G TOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG" while all reverse conducting types are marked with “SGR.” All devices ending with “26” are “Fine-pattern" devices that
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SG1200EX24
SG1500EX24
SG2000EX24
SG2200GXH24
SG3000EX24
SG3000GXH24
SG3000JX24
SG2000GXH26
SG800GXH24
SG1000GXH26
500EXH21
100gxhh21
800A 75m
gate turn off thyristors
TOSHIBA 100GXHH21
800GXHH21
800GX
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100EXG11
Abstract: 500EXH21 200FXG12 200FXH12 800GXHH21 gto 200A 100exh gto 300A 100GXHH21 4500v
Text: SELECTION GUIDE — Asymmetrical Type GTO Peak Off-State Voltage 1300V 1600V 1800V 2500V 3300V 800A SG800R24 SG800U24 6000V SG800W24 SG1000GXH26 1000A 1200A SG1200EX24 1500A SG1500EX24 2000A 4500V SG600GXH26 600A SG2000R24 SG2000U24 SG2000W24 SG2000EX24 SG2000EX26
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SG2500EX24
SG3000EX24
SG4000EX26
SG2000R24
SG2000U24
SG2000W24
SG1200EX24
SG1500EX24
SG2000EX24
SG2000EX26
100EXG11
500EXH21
200FXG12
200FXH12
800GXHH21
gto 200A
100exh
gto 300A
100GXHH21
4500v
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gate turn off thyristors
Abstract: 500EXH21 800gxhh21 800exh21
Text: GTOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG” while all reverse conducting types are marked with “SGR." All devices ending with “26” are “Fine-pattern” devices that
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1SG1200EX24
SG1500EX24
SG2000EX24
SG2000EX26
SG2200GXH24
SG3000EX24
SGR3000EX26
SG4000EX26
SGR3000GXH26
SG4000GXH26
gate turn off thyristors
500EXH21
800gxhh21
800exh21
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