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    Siemens

    Siemens SGB02N60

    6 A, 600 V, N-CHANNEL IGBT, TO-263AB
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    SGB02N60 Datasheets (5)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    SGB02N60
    Infineon Technologies IGBT Discretes; Package: PG-TO263-3; Switching Frequency: Fast IGBT 10-40 kHz; Package: D2PAK (TO-263); VCE (max): 600.0 V; IC(max) @ 25°: 6.0 A; IC(max) @ 100°: 2.9 A Original PDF
    SGB02N60
    Infineon Technologies Fast IGBT in NPT-Technology Original PDF
    SGB02N60
    Infineon Technologies 2A 600V TO263AB SMD IGBT Original PDF
    SGB02N60
    Siemens Original PDF
    SGB02N60ATMA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 6A 30W TO263-3 Original PDF

    SGB02N60 Datasheets Context Search

    Catalog Datasheet
    Type
    Document Tags
    PDF

    Contextual Info: Preliminary data SIEMENS SGP02N60, SGB02N60, SGD02N60, SGU02N60 Fast S-IGBT in NPT-Technology • 75 % lower E0ff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 is • Designed for moderate and high frequency applications:


    OCR Scan
    SGP02N60, SGB02N60, SGD02N60, SGU02N60 SGP02N60 O-220AB Q67041-A4707-A2 SGB02N60 O-263AB Q67041-A4707-A4 PDF

    SGU02N60

    Abstract: ic 0941 SGB02N60 P-TO252 SGD02N60 SGP02N60
    Contextual Info: SGP02N60, SGB02N60 SGD02N60, SGU02N60 Fast S-IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original
    SGP02N60, SGB02N60 SGD02N60, SGU02N60 O-220AB Q67041-A4707-A2 O-263AB Q67041-A4707-A4 SGD02N60 SGU02N60 ic 0941 SGB02N60 P-TO252 SGD02N60 SGP02N60 PDF

    Contextual Info: SGB02N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original
    SGB02N60 SGB02N60 PDF

    SGP02N60

    Abstract: SGU02N60 SGB02N60 SGD02N60 BUP410D
    Contextual Info: Preliminary data SGP02N60, SGB02N60, SGD02N60, SGU02N60 Fast S-IGBT in NPT-Technology • 75 % lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 µs • Designed for moderate and high frequency applications:


    Original
    SGP02N60, SGB02N60, SGD02N60, SGU02N60 SGP02N60 O-220AB Q67041-A4707-A2 SGB02N60 O-263AB Q67041-A4707-A4 SGP02N60 SGU02N60 SGB02N60 SGD02N60 BUP410D PDF

    g02n60

    Abstract: Q67040S4505 Q67040-S4505
    Contextual Info: SGB02N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original
    SGB02N60 SGB02N60 g02n60 Q67040S4505 Q67040-S4505 PDF

    g02n60

    Abstract: SGB02N60 PG-TO-263-3-2 PG-TO263-3-2
    Contextual Info: SGB02N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original
    SGB02N60 PG-TO-263-3-2 O-263AB) G02N60 g02n60 SGB02N60 PG-TO-263-3-2 PG-TO263-3-2 PDF

    Contextual Info: SGB02N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original
    SGB02N60 P-TO-263-3-2 O-263AB) G02N60 PDF

    ic 0941

    Abstract: P-TO252 Q67040-S4504 Q67040-S4505 Q67041-A4707 SGB02N60 SGD02N60 SGP02N60 S*02N60
    Contextual Info: SGP02N60, SGB02N60 SGD02N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original
    SGP02N60, SGB02N60 SGD02N60 P-TO-252-3-1 O-252AA) P-TO-220-3-1 O-220AB) P-TO-263-3-2 O-263AB) O-220AB ic 0941 P-TO252 Q67040-S4504 Q67040-S4505 Q67041-A4707 SGB02N60 SGD02N60 SGP02N60 S*02N60 PDF

    S*02N60

    Contextual Info: SGP02N60, SGB02N60 SGD02N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original
    SGP02N60, SGB02N60 SGD02N60 SGP02N60 SGD02N60 O-220AB O-263AB O-252AA Q67040-S4504 S*02N60 PDF

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
    Contextual Info: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8


    OCR Scan
    615NV BSP318S BUZ MOSFET mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S PDF

    PX3544

    Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
    Contextual Info: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly


    Original
    lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J PDF

    600V igbt dc to dc buck converter

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635
    Contextual Info: Infineon Product Catalog for Distribution 2008 Infineon Product Catalog for Distribution 2008 Product Catalog for Distribution Ordering No. B192-H6780-G11-X-7600 Published by Infineon Technologies AG [ www.infineon.com ] [ www.infineon.com/distribution ]


    Original
    B192-H6780-G11-X-7600 SP000008186 VDSL6100i-E 600V igbt dc to dc buck converter TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635 PDF

    igbt dimmer

    Abstract: SKW30N60HS SGP15N120 igbt 2A SKP15N60 SKW25N120 220 volt dimmer circuit SGW25N120 smps 12 volt SKW30N60
    Contextual Info: P R O D U C T B R I E F Fast & H i g h S p e e d I G BT for Industrial and Consumer Applications As Single IGBT version or DuoPackTM with very soft, fast recovery anti-parallel EmConTM Diode IGBT & DuoPack TM Applications Benefits • Motor Drives ■ Easy paralleling


    Original
    B152-H7942-X-X-7600 igbt dimmer SKW30N60HS SGP15N120 igbt 2A SKP15N60 SKW25N120 220 volt dimmer circuit SGW25N120 smps 12 volt SKW30N60 PDF

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
    Contextual Info: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package


    Original
    615NV OT-223 20iemens B152-H6493-G5-X-7600 BUZ MOSFET mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D PDF