SGP20N60RUF

Contextual Info: SGP20N60RUF Short Circuit Rated IGBT General Description Features Fairchild's RUF series of Insulated Gate Bipolar Transistors IGBTs provide low conduction and switching losses as well as short circuit ruggedness. The RUF series is designed for applications such as motor control,

g20n60hs

Abstract: G20N60 RY 227 Tf 227 10A SGP20N60HS 160W PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21 SGW20N60HS
Contextual Info: SGP20N60HS SGW20N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability

igbt 400V 20A

Abstract: Q67040-S4236 Q67041-A4712-A2 Q67041-A4712-A4 SGB20N60 SGP20N60 SGW20N60
Contextual Info: SGP20N60 SGB20N60, SGW20N60 Fast S-IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:

G20N60

Abstract: G20N60 IGBT
Contextual Info: SGP20N60 SGW20N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:

SGP20N60HS

Abstract: SIGC18T60UN
Contextual Info: SIGC18T60UN High Speed IGBT Chip in NPT-technology C FEATURES: • • • • • • This chip is used for: • SGP20N60HS low Eoff 600V NPT technology 100µm chip short circuit prove positive temperature coefficient easy paralleling Chip Type VCE SIGC18T60UN

Contextual Info: Preliminary Datasheet SGP20N60HS SGW20N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers:

Contextual Info: N-CHANNEL IGBT SGP20N60RUF FEATURES TO-220 * Short Circuit rated 10[is @Tc=100°C * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V @ lc=20A * High Input Impedance îc APPLICATIONS * * * * * AC & DC Motor controls General Purpose Inverters

Contextual Info: SGP20N60RUF N-CHANNELIGBT FEATURES T0-220 * Short Circuit rated 10|is @ Tc=100°C * High Speed Switching * Low Saturation Voltage : V CE sat = 2.0 V @ lc=20A * High Input Impedance APPLICATIONS * * * * * ABSOLUTE 4 îc AC & DC Motor controls General Purpose Inverters

Contextual Info: Preliminary SGP20N60RUF N-CHANNEL IGBT FEATURES TO-220 * Short Circuit rated 10uS @Tc=100°C * High Speed Switching * Low Saturation Volatge : VCE sat = 2.0 V @ lc=20A * High Input Impedance APPLICATIONS * AC & DC Motor controls * General Purpose Inverters

Contextual Info: Preliminary data SIEMENS SGP20N60, SGB20N60, SGW20N60 Fast S-IGBT in NPT-Technology • 7 5 % lower E 0 ff com pared to previous generation com bined with low conduction losses • Short circuit withstand tim e 10 is • D esigned for m oderate and high frequency applications:

SGP20N60

Abstract: Q67040-S4236 SGB20N60 SGW20N60
Contextual Info: SGP20N60, SGB20N60 SGW20N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:

transistor C 2240

Abstract: SGP20N60RUF
Contextual Info: IGBT SGP20N60RUF Short Circuit Rated IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT RUF series provides low conduction and switching losses as well as short circuit ruggedness. RUF series is designed for the applications such as motor control, UPS and general

SGP20N60

Abstract: SIGC18T60SNC 7242S
Contextual Info: SIGC18T60SNC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling This chip is used for: • SGP20N60 G Applications: • drives Chip Type VCE ICn

BUP602D

Abstract: SGP20N60
Contextual Info: SGP20N60 Preliminary data IGBT • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Pin 3 C E Type VCE IC Package Ordering Code SGP20N60 600V 20A TO-220 AB Q67040-A . . . . Maximum Ratings

G20N60

Abstract: G20N60 IGBT
Contextual Info: SGP20N60 SGW20N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:

Contextual Info: SGP20N60HS SGW20N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability

G20N60

Contextual Info: SGP20N60 SGW20N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:

SKW20N60

Abstract: Q67040-S4242 SGP20N60
Contextual Info: Preliminary IGBT same as SGP20N60 SKW20N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for:

g20n60hs

Abstract: G20N60 SGP20N60HS Diode 400V 20A 160W PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21 SGW20N60HS
Contextual Info: SGP20N60HS SGW20N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability

g20n60

Abstract: G20N60 IGBT igbt 400V 20A 180W PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21 SGP20N60 SGW20N60
Contextual Info: SGP20N60 SGW20N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:

A001

Abstract: SGP20N60 SIGC18T60SNC 7242S
Contextual Info: Preliminary SIGC18T60SNC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE This chip is used for: • SGP20N60 G Applications: • drives

SGW20N60HS

Abstract: SGP20N60HS
Contextual Info: SGP20N60HS Preliminary Datasheet SGW20N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation 12 µJ/A • Short circuit withstand time – 10 µs • NPT-Technology for 600V applications offers: - parallel switching capability

g20n60

Abstract: G20N60 IGBT g20n60 G igbt 400V 20A SGW20N60 180W PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21 SGP20N60
Contextual Info: SGP20N60 SGW20N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:

sgw20n60 data sheet

Abstract: Data sheet 1713 igbt 400V 20A Q67040-S4236 Q67041-A4712-A2 Q67041-A4712-A4 SGB20N60 SGP20N60 SGW20N60
Contextual Info: SGP20N60 SGB20N60, SGW20N60 Fast S-IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: