Untitled
Abstract: No abstract text available
Text: PF0030 Series MOS FET Power Amplifier • FEATURES • High Stability: Load VSWR = °° • Low Power Control Current: 400 fiA • Thin Package: 5mm ■ ORDERING INFORMATION P art No. Operating Frequency PF0030 824 to 849 M H z AMPS PF0032 872 to 905 M H z
|
OCR Scan
|
PDF
|
PF0030
PF0030
PF0032
|
Untitled
Abstract: No abstract text available
Text: PF0040 Series MOS FET Power Amplifier • FEATURES • High Stability: Load VSWR = °° • Low Power Control Current: 400 /xA • Thin Pack ag e: 5 mmt ■ ORDERING INFORMATION Part No. Operating Frequency PF0040 824 to 849 MHz AMPS PFÜ042 872 to 905 MHz
|
OCR Scan
|
PDF
|
PF0040
PF0040
|
mqs 6
Abstract: No abstract text available
Text: PF0055 Preliminary MOS FET Power Amplifier Module Handy Mobile Phone MQS FET Power Amplifier FOR AMPS 824 - 849 MHz • O U TL IN E D RAW ING ■ FEATURES • Small outline 12 x 35 x 4 .9 m m -1 • Low voltage operation 6V • Low pow er control current 300 pA
|
OCR Scan
|
PDF
|
PF0055
F0055
mqs 6
|
Untitled
Abstract: No abstract text available
Text: PF0015 -MOS FET Power Amplifier Module for Handy Mobile Phone M O S FET Power Amplifier F O R A M P S 824 ~ 849 MHz O U T L IN E D R A W IN G • FEATURES • Small outline 12 x 45 x 6 .5 mni3 1 Low voltage operation 6 V > Low power control current 300 /¿A
|
OCR Scan
|
PDF
|
PF0015
|
PF0040
Abstract: PF0042 BL02RN1-R62 G746 hitachi control module Hitachi Scans-001 shinetu
Text: PF0040 Series MOS FET Power Amplifier • FEATURES PIN OUT • High Stability: Load VSWR = =° • Low Power Control Current: 400 /xA • Thin Package: 5 mmt ■ ORDERING INFORMATION Part No. Operating Frequency PF0040 824 to 849 MHz AMPS PF0042 872 to 905 MHz
|
OCR Scan
|
PDF
|
PF0040
PF0042
BL02RN1-R62
G746
hitachi control module
Hitachi Scans-001
shinetu
|
Untitled
Abstract: No abstract text available
Text: HI-0010 MOS FET Power Amplifier UHF BAND 820 ~ 850 MHz I O U T L IN E DRAW ING • FEATURES • Included input and output matching circuit 60.5 • Easy to control output power 57.5 R 1.6 • Superior to stability at load mismatching * ir> n JJ ■ A B S O LU TE M A X IM U M RATINGS Ta = 2 5 °C
|
OCR Scan
|
PDF
|
HI-0010
PF0010
PF00J0
PF00I0
|
2SK1845
Abstract: 3sk85 2SK408 equivalent 3SK1 3sk156 3sk217 3SK228 3SK103 2sc464 2SC3511
Text: HITACHI Ultra High Frequency Devices DATA BOOK H IT A C H I ADE-41 CONTENTS • GENERAL INFORMATION. . . . . . 5 Si Bipolar Transistors.
|
OCR Scan
|
PDF
|
ADE-41
D-8013
2SK1845
3sk85
2SK408 equivalent
3SK1
3sk156
3sk217
3SK228
3SK103
2sc464
2SC3511
|
Untitled
Abstract: No abstract text available
Text: PF0055 - Prelim inary MOS FET Power Amplifier Module Handy Mobile Phone li/IOS FET Power Amplifier FOR AMPS 824 - 849 MHz • OUTLINE DRAWING ■ FEATURES • Small outline 12 X 35 X 4.9 mm -1 • Low voltage operation 6 V • Low power control current 300 /¿A
|
OCR Scan
|
PDF
|
PF0055
PF0055
|
ic 709 pin diagram
Abstract: No abstract text available
Text: PF0020 MOS F ET Power Amplifier UHF BAND 820 ~ 850 MHz • O UTLIN E DRAWING 60.5 ■ FEA TU R ES • Included input and output matching circuit • Easy to control output power • Superior to stability at load mismatching 57.5 ■ A B S O L U T E MAXIMUM RATINGS Ta = 25°C
|
OCR Scan
|
PDF
|
PF0020
PF0020
ic 709 pin diagram
|