Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SI SEMICONDUCTORS Search Results

    SI SEMICONDUCTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    SF Impression Pixel

    SI SEMICONDUCTORS Price and Stock

    Diotec Semiconductor AG SI-A1750

    HV Diode - D55x23 - 4800V - 4A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com SI-A1750
    • 1 $36.01
    • 10 $31.65
    • 100 $27.18
    • 1000 $26.46
    • 10000 $26.46
    		Buy Now

    Diotec Semiconductor AG SI-A3000

    HV Diode - D55x23 - 8000V - 2.5A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com SI-A3000
    • 1 $37.37
    • 10 $32.85
    • 100 $27.78
    • 1000 $27.09
    • 10000 $27.09
    		Buy Now

    Diotec Semiconductor AG SI-A1125

    HV Diode - D55x23 - 3200V - 6A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com SI-A1125
    • 1 $35.11
    • 10 $30.86
    • 100 $26.5
    • 1000 $25.79
    • 10000 $25.79
    		Buy Now

    Diotec Semiconductor AG SI-A8000

    HV Diode - D55x23 - 24000V - 1.8A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com SI-A8000
    • 1 $39.91
    • 10 $35.08
    • 100 $29.68
    • 1000 $28.94
    • 10000 $28.94
    		Buy Now

    Diotec Semiconductor AG SI-E8000-4

    HV Diode - D49x281 - 24000V - 4A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com SI-E8000-4
    • 1 $107.07
    • 10 $96.21
    • 100 $84.09
    • 1000 $84.09
    • 10000 $84.09
    		Buy Now

    SI SEMICONDUCTORS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Q62702-P1819

    Abstract: NA010
    Text: GaAlAs-IR-Lumineszenzdiode 880 nm und Si-Fototransistor GaAlAs-Infrared-Emitter (880 nm) and Si-Phototransistor SFH 7221 Wesentliche Merkmale Features • SMT-Gehäuse mit IR-Sender (880 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar


    Original     		PDF

    Q62702-P1819

    Abstract: No abstract text available
    Text: GaAlAs-IR-Lumineszensdiode 880 nm und Si-Fototransistor GaAlAs-Infrared-Emitter (880 nm) and Si-Phototransistor SFH 7221 Vorläufige Daten / Preliminary Data Wesentliche Merkmale • SMT-Gehäuse mit IR-Sender (880 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung


    Original     		OHF00312 GPL06965 Q62702-P1819 PDF

    fototransistor

    Abstract: No abstract text available
    Text: 2013-08-14 Infrared-Emitter 850 nm and Si-Phototransistor IR-Emitter (850 nm) und Si-Fototransistor Version 1.0 SFH 7250 Features: Besondere Merkmale: • Available on tape and reel • SMT package with IR emitter (850 nm) and Si-phototransistor • Suitable for SMT assembly


    Original     		D-93055 fototransistor PDF

    Untitled

    Abstract: No abstract text available
    Text: GaAlAs-IR-Lumineszenzdiode 880 nm und Si-Fototransistor GaAlAs-Infrared-Emitter (880 nm) and Si-Phototransistor Lead (Pb) Free Product - RoHS Compliant SFH 7221 Wesentliche Merkmale Features • SMT-Gehäuse mit IR-Sender (880 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: GaAlAs-IR-Lumineszenzdiode 880 nm und Si-Fototransistor GaAlAs-Infrared-Emitter (880 nm) and Si-Phototransistor Lead (Pb) Free Product - RoHS Compliant SFH 7221 Wesentliche Merkmale Features • SMT-Gehäuse mit IR-Sender (880 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung


    Original     		Q65110A2741 PDF

    led fototransistor

    Abstract: No abstract text available
    Text: GaAlAs-IR-Lumineszenzdiode 880 nm und Si-Fototransistor GaAlAs-Infrared-Emitter (880 nm) and Si-Phototransistor Lead (Pb) Free Product - RoHS Compliant SFH 7221 Wesentliche Merkmale Features • SMT-Gehäuse mit IR-Sender (880 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung


    Original     		Q65110A2741 led fototransistor PDF

    fototransistor led

    Abstract: No abstract text available
    Text: GaAlAs-IR-Lumineszenzdiode 880 nm und Si-Fototransistor GaAlAs-Infrared-Emitter (880 nm) and Si-Phototransistor Lead (Pb) Free Product - RoHS Compliant SFH 7221 Wesentliche Merkmale Features • SMT-Gehäuse mit IR-Sender (880 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung


    Original     		PDF

    uv phototransistor

    Abstract: 8602 rectifier photodiode ge uv photodiode, GaP TSAL6200 ga09 80086 "photoconductive" 1015
    Text: VISHAY Vishay Semiconductors Physics and Technology Emitters www.vishay.com 1 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. Structure of the chip is displayed in figure 1. Al p - GaAs : Si n - GaAs : Si 94 8200


    Original     		14-Apr-04 uv phototransistor 8602 rectifier photodiode ge uv photodiode, GaP TSAL6200 ga09 80086 "photoconductive" 1015 PDF

    BLD135D

    Abstract: BLD128D BUL6802 BLD133D BLD137D bld128 BLD137 bld135 BLD139D BLD123D
    Text: 深圳深爱半导体有限公司 Shenzhen SI Semiconductors CO.,Ltd. http://www.sisemi.com.cn sisemi@sisemi.com.cn SI transistors Selection Guide 一Compact fluorescent lamps Energy-Saving Lamps ： BVceo (V) Ic (A) Application（W） TO-92 TO-92 Die Size


    Original     		MJE13001 BUL6821 BUL6822 BUL6822A BUL6823 MJE13003BR O-126 BUL6802 BUL6823A BLD135D BLD128D BUL6802 BLD133D BLD137D bld128 BLD137 bld135 BLD139D BLD123D PDF

    TSAL6200

    Abstract: pn junction diode structure phototransistor K-T TSAL6200 application circuit
    Text: Vishay Semiconductors Physics and Technology Emitters Materials Document Number 80086 02-02 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 5. p - GaAs : Si Al n - GaAs : Si


    Original     		PDF

    logic ic 7476 pin diagram

    Abstract: H13003 datasheet and pin diagram of IC 7476 pin diagram for IC 7476 h13001 6H23 IDX110 R019h 7476 PIN DIAGRAM v63n
    Text: Preliminary HD66781 720-channel Source Driver for a-Si TFT/Low Temperature Poly-Si TFT Panels with 262,144-color display RAM REJxxxxxxx-xxxxZ Rev.0.5 July.31.2003 • Index Description . 6


    Original     		HD66781 720-channel 144-color HD66781 logic ic 7476 pin diagram H13003 datasheet and pin diagram of IC 7476 pin diagram for IC 7476 h13001 6H23 IDX110 R019h 7476 PIN DIAGRAM v63n PDF

    PDINP075500A-0-0-01

    Abstract: PD-LD 850nm APD 850nm photodiode pigtail pigtail pin photodiode ge PDINV300SC2A-M-0 PDSIU500ST73-T-0 Si apd photodiode PDGAJ1001FCA-0-0-01 PDINC100SC22-M-0
    Text: PD LD PDXX Series Detectors for Fiber Optics InGaAs, Si and Ge PIN Diodes Si and Ge APDs Inc PD-LD Inc. offers a variety of standard and custom PIN Photodiodes and APDs is fiber coupled packages. The semiconductors offered are of proven manufacture and design. Our Silicon


    Original     		1100nm, 1650nm 2100nm. 100micron. PDINP075500A-0-0-01 PD-LD 850nm APD 850nm photodiode pigtail pigtail pin photodiode ge PDINV300SC2A-M-0 PDSIU500ST73-T-0 Si apd photodiode PDGAJ1001FCA-0-0-01 PDINC100SC22-M-0 PDF

    PDINP075FC11-W-0

    Abstract: 850nm APD 850nm photodiode pigtail germanium photodiode PIN PDINV300FC21-M-0 D10-210 InGaAs apd photodiode photodiode germanium PDGAJ1001FCA-0-0-01 PDINC1003FCA-0-0-01
    Text: PD LD PDXX Series Detectors for Fiber Optics InGaAs, Si and Ge PIN Diodes Si and Ge APDs Inc. PD-LD Inc. offers a variety of standard and custom PIN Photodiodes and APDs is fiber coupled packages. The semiconductors offered are of proven manufacture and design. Our Silicon


    Original     		1100nm, 1650nm 2100nm. 100micron. PDINP075FC11-W-0 850nm APD 850nm photodiode pigtail germanium photodiode PIN PDINV300FC21-M-0 D10-210 InGaAs apd photodiode photodiode germanium PDGAJ1001FCA-0-0-01 PDINC1003FCA-0-0-01 PDF

    SM31

    Abstract: SM33 SM35 SM36 SM41 AHL-62N
    Text: APPLICATION NOTE M16C/62A Group, M16C/62N Group SI/O3,4 setup procedures 1.0 Abstract The following article introduces SI/O3,4 setup procedures and its application example. 2.0 Introduction The explanation of this issue is applied in the following condition.


    Original     		M16C/62A M16C/62N REJ05B0264-0100Z/Rev SM31 SM33 SM35 SM36 SM41 AHL-62N PDF

    4n60f

    Abstract: SIF4N60 45V100 4n60fp SIF4N60FP 600VGS F4N60 4N60 D25A
    Text: Shenzhen SI Semiconductors Co., LTD. Product Specification HANNEL POWER MOSFET NN-沟道功率 MOS 管//N-C N-CHANNEL ●特点：热阻低 开关速度快 F4N60 FP SI SIF 4N60FP RoHS 输入阻抗高 符合RoHS RoHS规范 ●FEATUR ES ES：•LOW THERMAL RESISTANCE ■HIGH INPUT RESISTANCE ■FAST SWITCHING


    Original     		SIF4N60FP 4N60FP O-220FP O-220FP 4n60f SIF4N60 45V100 4n60fp SIF4N60FP 600VGS F4N60 4N60 D25A PDF

    SIF4N60

    Abstract: F4N60 600VGS
    Text: Shenzhen SI Semiconductors Co., LTD. Product Specification F4N60 SI SIF HANNEL POWER M OSFET NN-沟道功率 MOS 管//N-C N-CHANNEL ●特点：热阻低 开关速度快 RoHS 输入阻抗高 符合RoHS RoHS规范 ●FEATUR ES ES：•LOW THERMAL RESISTANCE ■HIGH INPUT RESISTANCE ■FAST SWITCHING


    Original     		SIF4N60 O-220 O-220 SIF4N60 F4N60 600VGS PDF

    SIF2N60

    Abstract: F2N60
    Text: Shenzhen SI Semiconductors Co., LTD. Product Specification F2N60 SI SIF /N-C HANNEL POWER MOSFET NN-沟道功率 MOS 管/N-C /N-CHANNEL ●特点：热阻低 开关速度快 输入阻抗高 RoHS 符合RoHS RoHS规范 ●FEATUR ES ES：•LOW THERMAL RESISTANCE ■HIGH INPUT RESISTANCE ■FAST SWITCHING


    Original     		SIF2N60 O-220 O-220 SIF2N60 F2N60 PDF

    Untitled

    Abstract: No abstract text available
    Text: Tem ic Si6966DQ Semiconductors Dual N-Channel, 2.5-V G-S Rated MOSFET Product Summary VDS(V) Id r DS(on) (£2) 20 (A) 0.030 @VGs = 4.5 V ±4.5 0.040 @VGs = 2.5 V ±3.9 Di O D2 O Si s2 TSSOP-8 Di [ 1 Si E Si L i Gi [ i • Si6966DQ j D D2 i ] S2 _6J S2 3


    OCR Scan     		Si6966DQ S-54713â 27-Oct-97 PDF

    Photodiodes

    Abstract: GaAsP Laser Diode PHOTO SENSORS insb diode led uv
    Text: Types and Applications of Hamamatsu Opto-semiconductors Products ' Hiqh fcneigy Particles Si Photodiodes — UV 1— Visible I Hiqti Ene'sy P h /s « i lAJtinai MediCirt liviustrial w ^ u n n g tn rw ra ritc UV Enhanced Si Photodiodes Pollution Anaiv/t's,. ‘¿ pat iroptwlorr,ôtera


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SI6928DQ VISHAY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUM M ARY v „s (V) r d s (ON) (-3) lD (A) 0.035 @ V GS = 10 V ±4 .0 0.050 @ VGS = 4.5 V ±3 .4 30 D2 Di O TSSOP-8 d2 Di Si s2 Si6928DQ Si s2 Gi g2 Top View 6 6 Si s2 N-Channel MOSFET


    OCR Scan     		SI6928DQ Si6928DQ S-56945â 23-Nov-98 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si6955DQ VISH A Y Siliconix Dual P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) r DS(ON) (//) Id (A) 0.085 @ VGS = —10 V ±2 .5 0.19 @ VGs = —4.5 V ±1 .8 -3 0 Si Q S2 Q Di d2 TSSOP-8 d2 Di Si s2 s2 Gi g2 Si Si6955DQ Top View P-Channel MOSFET P-Channel MOSFET


    OCR Scan     		Si6955DQ S-56944â 23-Nov-98 PDF

    Untitled

    Abstract: No abstract text available
    Text: GE C P L E S S E Y Si si Mit Junens ADVANCE INFORMATION o \ I v c: I o K S DS40S6-2.4 GP2010 GLOBAL POSITIONING SYSTEM RECEIVER RF FRONT END The GP2010 is GEC Plessey Semiconductors' second generation RFFront-end for Global Positioning System GPS) receivers. The GP2010 uses many innovative design


    OCR Scan     		DS40S6-2 GP2010 GP2010 TheGP2010 42MHz) 37bfiS22 GD24f PDF

    DNB-UJS

    Abstract: DDT-UJS-TU2-1 opto InGan green CHIP LED LAMP LED 28500 mcd dominant DDB-UJS-RS1-1 DRR-NJS-T2U-1 dsw-usd-uv1-1 IR LED 810 nm SJS Products Chip led bi-color right angle common cathode
    Text: DOMINANT Semiconductors Mp Innovating Illumination Si Hybrid, Revolutions e x t G e n e T tt ÉÉÉÜ m m sm m si Taking off with a myriad of colors Take a leap of faith in lighting technology, and before you land, you will discover" cmazzling array of scintillating colors right in your


    OCR Scan     		PDF

    ZN 3055 transistor

    Abstract: Transistor w1l 7805 TO-220 V7233 5241E V7331 V5237B V-5240-k mk 5373 V7622
    Text: ASSMANN Technical Data & Abbreviations Electronic C om ponen ts Al Surface nature AI203 Aluminiumoxyd Al Mg Si 0,5 Special aluminium alloy {extruded Al 99,5 Special aluminium alloy band) GD-AI Si 12 Special aluminium alloy (Die-cast) BeO Berylliumoxyd K


    OCR Scan     		AI203 OT-32, O-126) O-220 O-220, ZN 3055 transistor Transistor w1l 7805 TO-220 V7233 5241E V7331 V5237B V-5240-k mk 5373 V7622 PDF