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    SI6966DQ Price and Stock

    Vishay Siliconix SI6966DQ-T1-E3

    MOSFET 2N-CH 20V 4A 8TSSOP
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    DigiKey SI6966DQ-T1-E3 Reel 3,000
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    Bristol Electronics SI6966DQ-T1-E3 80 3
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    Quest Components SI6966DQ-T1-E3 64
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    Vishay Siliconix SI6966DQ-T1-GE3

    MOSFET 2N-CH 20V 4A 8TSSOP
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    Vishay Siliconix SI6966DQ-T1-E3/BKN

    MOSFET; 20V, N-CH, 30MOHM, 32M CELL Trench | Siliconix / Vishay SI6966DQ-T1-E3/BKN
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    Fairchild Semiconductor Corporation SI6966DQ

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    Vishay Intertechnologies SI6966DQ-T1

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    Quest Components SI6966DQ-T1 1,080
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    SI6966DQ Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI6966DQ Fairchild Semiconductor Dual N-Channel 2.5V Specified PowerTrench MOSFET Original PDF
    Si6966DQ Toshiba Power MOSFETs Cross Reference Guide Original PDF
    Si6966DQ Vishay Intertechnology Dual N-Channel 2.5-V (G-S) MOSFET Original PDF
    Si6966DQ SPICE Device Model Vishay Dual N-Channel 2.5-V (G-S) Rated MOSFET Original PDF
    SI6966DQ-T1 Vishay Intertechnology Dual N-Channel 2.5-V (G-S) MOSFET Original PDF
    SI6966DQ-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 20V 4A 8TSSOP Original PDF
    SI6966DQ-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 20V 4A 8TSSOP Original PDF

    SI6966DQ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si6966DQ

    Abstract: No abstract text available
    Text: SPICE Device Model Si6966DQ Vishay Siliconix Dual N-Channel 2.5-V G-S Rated MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si6966DQ 18-Jul-08

    Si6966DQ

    Abstract: No abstract text available
    Text: SPICE Device Model Si6966DQ Vishay Siliconix Dual N-Channel 2.5-V G-S Rated MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si6966DQ S-60147Rev. 13-Feb-06

    Si6966DQ

    Abstract: No abstract text available
    Text: Si6966DQ New Product Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.030 @ VGS = 4.5 V 4.5 0.040 @ VGS = 2.5 V 3.9 D1 D2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 8 D2 7 S2 D Si6966DQ 6 S2 5 G2 G1 G2 Top View S1 S2 N-Channel MOSFET


    Original     		PDF Si6966DQ S-20216--Rev. 01-Apr-02

    MOSFET TSSOP-8

    Abstract: MOSFET TSSOP-8 dual n-channel L 81221 A1818 mosfet 6655
    Text: Si6966DQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.030 at VGS = 4.5 V 4.5 0.040 at VGS = 2.5 V 3.9 • Halogen-free Option Available • TrenchFET Power MOSFETs: 2.5 V Rated Pb-free Available


    Original     		PDF Si6966DQ Si6966DQ-T1 Si6966DQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 MOSFET TSSOP-8 MOSFET TSSOP-8 dual n-channel L 81221 A1818 mosfet 6655

    2502P

    Abstract: CBHK741B019 F63TNR FDW2502P SI6966DQ Diode S4 55a
    Text: SI6966DQ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate


    Original     		PDF SI6966DQ 2502P CBHK741B019 F63TNR FDW2502P SI6966DQ Diode S4 55a

    Si6966DQ

    Abstract: 54713
    Text: Si6966DQ Dual N-Channel, 2.5-V G-S Rated MOSFET Product Summary VDS (V) 20 rDS(on) (W) ID (A) 0.030 @ VGS = 4.5 V "4.5 0.040 @ VGS = 2.5 V "3.9 D1 D2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 D 8 7 6 5 Si6966DQ D2 S2 S2 G2 G1 G2 Top View S1 S2 N-Channel MOSFET N-Channel MOSFET


    Original     		PDF Si6966DQ S-54713--Rev. 27-Oct-97 54713

    54713

    Abstract: Si6966DQ S-54713-Rev
    Text: Si6966DQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.030 @ VGS = 4.5 V "4.5 0.040 @ VGS = 2.5 V "3.9 D1 D2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 D Si6966DQ 8 D2 7 S2 6 S2 5 G2 G1 G2 Top View S1 S2 N-Channel MOSFET


    Original     		PDF Si6966DQ 18-Jul-08 54713 S-54713-Rev

    Untitled

    Abstract: No abstract text available
    Text: Si6966DQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.030 @ VGS = 4.5 V "4.5 0.040 @ VGS = 2.5 V "3.9 D1 D2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 D Si6966DQ 8 D2 7 S2 6 S2 5 G2 G1 G2 Top View S1 S2 N-Channel MOSFET


    Original     		PDF Si6966DQ 08-Apr-05

    Si6966DQ

    Abstract: No abstract text available
    Text: Si6966DQ New Product Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.030 @ VGS = 4.5 V 4.5 0.040 @ VGS = 2.5 V 3.9 D1 D2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 8 D2 7 S2 D Si6966DQ 6 S2 5 G2 G1 G2 Top View S1 S2 N-Channel MOSFET


    Original     		PDF Si6966DQ 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si6966DQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.030 at VGS = 4.5 V 4.5 0.040 at VGS = 2.5 V 3.9 • Halogen-free Option Available • TrenchFET Power MOSFETs: 2.5 V Rated Pb-free Available


    Original     		PDF Si6966DQ Si6966DQ-T1 Si6966DQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SI6966DQ

    Abstract: No abstract text available
    Text: SI6966DQ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate


    Original     		PDF SI6966DQ SI6966DQ

    Si6966DQ

    Abstract: No abstract text available
    Text: SPICE Device Model Si6966DQ Vishay Siliconix Dual N-Channel 2.5-V G-S Rated MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si6966DQ 04-Apr-02

    m 9625

    Abstract: mosfet 0018 AN609 Si6966DQ 370970
    Text: Si6966DQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si6966DQ AN609 10-Jul-07 m 9625 mosfet 0018 370970

    54713

    Abstract: Si6966DQ
    Text: Si6966DQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.030 @ VGS = 4.5 V "4.5 0.040 @ VGS = 2.5 V "3.9 D1 D2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 D Si6966DQ 8 D2 7 S2 6 S2 5 G2 G1 G2 Top View S1 S2 N-Channel MOSFET


    Original     		PDF Si6966DQ S-54713--Rev. 27-Oct-97 54713

    diode 8a 600v

    Abstract: 4 pin optocoupler 4PIN optocoupler bidirectional optocoupler toshiba logic level complementary MOSFET IGBT gate optocoupler driver for a buck converter hma121 0.75KW layout 48 VOLT 150 AMP smps FET pair n-channel p-channel full bridge
    Text: Fairchild New Product Highlights, #1, August 2001 Interface & Logic Optoelectronics Fairchild New Product Highlights Analog Discrete Power Switch for off-line power supply See page 2 The Latest Fairchild Innovations Contents Comprehensive New Product List


    Original     		PDF Power247TM, diode 8a 600v 4 pin optocoupler 4PIN optocoupler bidirectional optocoupler toshiba logic level complementary MOSFET IGBT gate optocoupler driver for a buck converter hma121 0.75KW layout 48 VOLT 150 AMP smps FET pair n-channel p-channel full bridge

    FDC6331

    Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
    Text: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3


    Original     		PDF 2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532 FDB3632 FDB3652 FDC6331 fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305

    SI2333DS-T1-E3

    Abstract: SI2305DS-T1-E3 Si2333 Si2302ADS-T1-E3 SUP75N06-08-E3 si4486ey-t1-e3 SUP60N06-18-E3 SI2308BDS-T1-E3 SI4488DY-T1-E3 2N7002K
    Text: 2017-2012:QuarkCatalogTempNew 9/11/12 9:38 AM Page 2017 25 Power MOSFETs and Buffered H-Bridge Drivers P-Channel PowerPAK 1212-8 PowerPAK 1212-8 Stock No. Mfr.’s Type SI7415DN-T1-E3 SI7107DN-T1-E3 SI7913DN-T1-E3 Configuration VDS V RDS(on) @ –4.5 V (Ω)


    Original     		PDF SI7415DN-T1-E3 SI7107DN-T1-E3 SI7913DN-T1-E3 SI7414DN-T1-E3 SI7810DN-T1-E3 70026365Single SI9986CY-T1-E3 SI9986DY-T1-E3 SI9987DY-T1-E3 SI2333DS-T1-E3 SI2305DS-T1-E3 Si2333 Si2302ADS-T1-E3 SUP75N06-08-E3 si4486ey-t1-e3 SUP60N06-18-E3 SI2308BDS-T1-E3 SI4488DY-T1-E3 2N7002K

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


    Original     		PDF 2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L

    STM9435

    Abstract: AP4411 ao3411 EQUIVALENT STM8405 AP40N03H AP4936M stm4532 FDD6685 AP9960M APEC
    Text: South Sea Semiconductor Cross Reference Guide Competitor SSS Competitor Part Number Part Number STU3055L2 APM2034NU ANPEC STU4030NL APM2512NU ANPEC STU4030NL APM3011NU ANPEC STU3030PL APM3020PU ANPEC APM3023N ANPEC STU3030NL APM4210K ANPEC SDM4410 APM4220K ANPEC


    Original     		PDF STU3055L2 APM2034NU STU4030NL APM2512NU APM3011NU STU3030PL APM3020PU APM3023N STU3030NL STM9435 AP4411 ao3411 EQUIVALENT STM8405 AP40N03H AP4936M stm4532 FDD6685 AP9960M APEC

    STF12A80

    Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
    Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer


    Original     		PDF 02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    VN10KLS

    Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
    Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated


    Original     		PDF Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05

    Untitled

    Abstract: No abstract text available
    Text: Tem ic Si6966DQ Semiconductors Dual N-Channel, 2.5-V G-S Rated MOSFET Product Summary VDS(V) Id r DS(on) (£2) 20 (A) 0.030 @VGs = 4.5 V ±4.5 0.040 @VGs = 2.5 V ±3.9 Di O D2 O Si s2 TSSOP-8 Di [ 1 Si E Si L i Gi [ i • Si6966DQ j D D2 i ] S2 _6J S2 3


    OCR Scan     		PDF Si6966DQ S-54713â 27-Oct-97