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    Vishay Siliconix SI1539CDL-T1-GE3

    MOSFET N/P-CH 30V 0.7A SC70-6
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    DigiKey SI1539CDL-T1-GE3 Reel 21,000 3,000
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    Vishay Siliconix SI1553CDL-T1-GE3

    MOSFET N/P-CH 20V 0.7A SC70-6
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    DigiKey SI1553CDL-T1-GE3 Reel 7,755 3,000
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    SI1553CDL-T1-GE3 Digi-Reel 7,755 1
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    SI1553CDL-T1-GE3 Cut Tape 7,755 1
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    RS SI1553CDL-T1-GE3 Bulk 1,670 1
    • 1 $0.475
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    ES Components SI1553CDL-T1-GE3
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    New Advantage Corporation SI1553CDL-T1-GE3 306,000 1
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    Vishay Siliconix SI1553CDL-T1-BE3

    MOSFET N/P-CH 20V 0.7A SC70-6
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    DigiKey SI1553CDL-T1-BE3 Digi-Reel 2,400 1
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    SI1553CDL-T1-BE3 Cut Tape 2,400 1
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    Vishay Siliconix SI1539CDL-T1-BE3

    MOSFET N/P-CH 30V 0.7A SC70-6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI1539CDL-T1-BE3 Cut Tape 2,350 1
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    SI1539CDL-T1-BE3 Digi-Reel 2,350 1
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    New Advantage Corporation SI1539CDL-T1-BE3 12,000 1
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    OptiFuse APS-I-15A

    FUSE AUTO 15A 32VDC BLADE MINI
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    DigiKey APS-I-15A Bulk 1,289 1
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    TME APS-I-15A 100
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    SI15 Datasheets (51)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI15 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    SI-15 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    Si1501DL Vishay Intertechnology Complementary 20-V (D-S) Low-Threshold MOSFET Original PDF
    SI1501DL Vishay Siliconix Complementary 20-V (D-S) Low-Threshold MOSFET Original PDF
    Si1501DL SPICE Device Model Vishay Complementary 20-V (D-S) Low-Threshold MOSFET Original PDF
    SI1539CDL-T1-BE3 Vishay Siliconix MOSFET N/P-CH 30V SOT363 Original PDF
    SI1539CDL-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 30V 700MA SOT363 Original PDF
    SI1539DDL-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET N/P-CH 30V SC70-6 Original PDF
    Si1539DL Vishay Intertechnology N- and P-Channel 30-V (D-S) MOSFET Original PDF
    SI1539DL Vishay Siliconix MOSFETs Original PDF
    Si1539DL SPICE Device Model Vishay N- and P-Channel 30-V (D-S) MOSFET Original PDF
    SI1539DL-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 30V 540MA SC70-6 Original PDF
    SI1539DL-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 30V 540MA SC70-6 Original PDF
    Si1551DL Vishay Intertechnology Complementary 20-V (D-S) MOSFET Original PDF
    SI1551DL Vishay Siliconix Complementary 20-V (D-S) MOSFET Original PDF
    Si1551DL SPICE Device Model Vishay Complementary 20-V (D-S) MOSFET Original PDF
    SI1551DL-T1 Vishay Intertechnology Complementary 20-V (D-S) MOSFET Original PDF
    SI1551DL-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 290MA SC70-6 Original PDF
    SI1551DL-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 290MA SC70-6 Original PDF
    SI1553CDL-T1-BE3 Vishay Siliconix MOSFET N/P-CH 20V SC70-6 Original PDF

    SI15 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    N-Channel mosfet sot-363

    Abstract: No abstract text available
    Text: Si1539CDL Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) () ID (A)a 0.388 at VGS = 10 V 0.7 0.525 at VGS = 4.5 V 0.6 0.890 at VGS = - 10 V - 0.5 1.7 at VGS = - 4.5 V - 0.3 Qg (Typ.)


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    PDF Si1539CDL OT-363 SC-70 Si1539CDL-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 N-Channel mosfet sot-363

    Si1551DL

    Abstract: Si1551DL-T1-E3
    Text: Si1551DL Vishay Siliconix Complementary 20 V D-S MOSFET FEATURES PRODUCT SUMMARY N-Channel P-Channel VDS (V) RDS(on) (Ω) ID (A) 1.9 at VGS = 4.5 V 0.30 20 3.7 at VGS = 2.7 V 0.22 - 20 4.2 at VGS = 2.5 V 0.21 0.995 at VGS = - 4.5 V - 0.44 1.600 at VGS = - 2.7 V


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    PDF Si1551DL 2002/95/EC OT-363 SC-70 Si1551DL-T1-lectual 18-Jul-08 Si1551DL-T1-E3

    PBT-GF30-V0

    Abstract: slot sensor inductive slot sensor Si15-K30-RZ3
    Text: Subject to change without notice • Hans Turck GmbH & Co.KG 2002 • Edition: Hans Turck GmbH & Co.KG • Postfach • D-45466 Mülheim an der Ruhr • Telefon 02 08/49 52-0 • Telefax 02 08/49 52-264 Inductive sensor slot-type Si15-K30-RZ3 48 15 30 42


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    PDF D-45466 Si15-K30-RZ3 PBT-GF30-V0 PBT-GF30-V0 slot sensor inductive slot sensor

    71079

    Abstract: mosfet low vgs si1555dl-t1-e3 Si1555DL Si1555DL-T1 A.4 SOT363
    Text: Si1555DL Vishay Siliconix Complementary Low-Threshold MOSFET Pair FEATURES PRODUCT SUMMARY N-Channel P-Channel 20 −8 rDS on (W) ID (A) 0.385 @ VGS = 4.5 V 0.70 0.630 @ VGS = 2.5 V 0.54 0.600 @ VGS = −4.5 V −0.60 0.850 @ VGS = −2.5 V −0.50 1.200 @ VGS = −1.8 V


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    PDF Si1555DL OT-363 SC-70 Si1555DL-T1 Si1555DL-T1--E3 08-Apr-05 71079 mosfet low vgs si1555dl-t1-e3 A.4 SOT363

    Si1553DL

    Abstract: No abstract text available
    Text: Si1553DL New Product Vishay Siliconix Complementary 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.385 @ VGS = 4.5 V "0.70 0.630 @ VGS = 2.5 V "0.54 0.995 @ VGS = –4.5 V "0.44 1.800 @ VGS = –2.5 V "0.32 SOT-363


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    PDF Si1553DL OT-363 SC-70 S-01461--Rev. 10-Jul-00

    PBT-GF30

    Abstract: SI15 slot sensor Si15-K30-AN6X transistor k30 PBT-GF30-V0
    Text: Subject to change without notice • Hans Turck GmbH & Co.KG 2002 • Edition: Hans Turck GmbH & Co.KG • Postfach • D-45466 Mülheim an der Ruhr • Telefon 02 08/49 52-0 • Telefax 02 08/49 52-264 Inductive sensor slot-type Si15-K30-AN6X 48 15 30


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    PDF D-45466 Si15-K30-AN6X PBT-GF30-V0 PBT-GF30 SI15 slot sensor transistor k30 PBT-GF30-V0

    Untitled

    Abstract: No abstract text available
    Text: Inductive sensor slot-type SI15-K30-AN6X • Slot sensor, height 30 mm ■ Plastic, PBT-GF30-V0 ■ DC 3-wire, 10…30 VDC ■ NO contact, NPN output ■ Cable connection Wiring diagram Type code Ident no. SI15-K30-AN6X 1605003 Slot width Repeatability Temperaturdrift


    Original
    PDF SI15-K30-AN6X PBT-GF30-V0 30VDC 2013-07-13T05 D-45472

    mosfet low vgs

    Abstract: diode marking CODE VN S2 Si1501DL marking code vishay SILICONIX
    Text: Si1501DL Vishay Siliconix Complementary 20-V D-S Low-Threshold MOSFET PRODUCT SUMMARY Channel VDS (V) N-Channel 20 P Channel P-Channel −20 20 rDS(on) (W) ID (mA) 2.0 @ VGS = 4.5 V 250 2.5 @ VGS = 2.5 V 150 3.8 @ VGS = −4.5 V −180 5.0 @ VGS = −2.5 V


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    PDF Si1501DL OT-363 SC-70 18-Jul-08 mosfet low vgs diode marking CODE VN S2 marking code vishay SILICONIX

    4584 equivalent

    Abstract: AN609 Si1551DL
    Text: Si1551DL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


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    PDF Si1551DL AN609 14-Noc-05 4584 equivalent

    87784

    Abstract: No abstract text available
    Text: Si1539DDL_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original
    PDF Si1539DDL AN609, 15-Jan-15 87784

    Si1557DH

    Abstract: No abstract text available
    Text: SPICE Device Model Si1557DH Vishay Siliconix N- and P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si1557DH 09-Sep-02

    Untitled

    Abstract: No abstract text available
    Text: Si1563DH Vishay Siliconix Complementary 20 V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.00 0.490 at VGS = - 4.5 V - 1.00


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    PDF Si1563DH SC-70 2002/95/EC OT-363 SC-70 11-Mar-11

    Si1553DL

    Abstract: No abstract text available
    Text: SPICE Device Model Si1553DL Vishay Siliconix Complementary 2.5-V G-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si1553DL S-50232Rev. 28-Feb-05

    Untitled

    Abstract: No abstract text available
    Text: Si1501DL New Product Vishay Siliconix Dual N- and P-Channel "20-V D-S Low-Threshold MOSFET PRODUCT SUMMARY Channel VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (mA) 2.0 @ VGS = 4.5 V 250 2.5 @ VGS = 2.5 V 150 3.8 @ VGS = –4.5 V –180 5.0 @ VGS = –2.5 V


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    PDF Si1501DL OT-363 SC-70 S-01887--Rev. 28-Aug-00

    KEMA 02 ATEX

    Abstract: SI15 PBT-GF30-V0 Si15-K30-Y1X inductive slot sensor
    Text: Subject to change without notice • Hans Turck GmbH & Co.KG 2002 • Edition: Hans Turck GmbH & Co.KG • Postfach • D-45466 Mülheim an der Ruhr • Telefon 02 08/49 52-0 • Telefax 02 08/49 52-264 Inductive sensor slot-type Si15-K30-Y1X 48 15 30 42


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    PDF D-45466 Si15-K30-Y1X PBT-GF30-V0 IM1-22Ex-R 230VAC KEMA 02 ATEX SI15 PBT-GF30-V0 inductive slot sensor

    PBT-GF30

    Abstract: SI15-K30-AZ3 PBT-GF30-V0 inductive slot sensor slot sensor 55BU
    Text: Subject to change without notice • Hans Turck GmbH & Co.KG 2002 • Edition: Hans Turck GmbH & Co.KG • Postfach • D-45466 Mülheim an der Ruhr • Telefon 02 08/49 52-0 • Telefax 02 08/49 52-264 Inductive sensor slot-type Si15-K30-AZ3 48 15 30 42


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    PDF D-45466 Si15-K30-AZ3 PBT-GF30-V0 PBT-GF30 PBT-GF30-V0 inductive slot sensor slot sensor 55BU

    Si15-K30-Y1

    Abstract: kema 02 ATEX 1090X PBT-GF30-V0
    Text: Subject to change without notice • Hans Turck GmbH & Co.KG 2002 • Edition: Hans Turck GmbH & Co.KG • Postfach • D-45466 Mülheim an der Ruhr • Telefon 02 08/49 52-0 • Telefax 02 08/49 52-264 Inductive sensor slot-type Si15-K30-Y1 48 15 30 42


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    PDF D-45466 Si15-K30-Y1 PBT-GF30-V0 IM1-22Ex-R 230VAC kema 02 ATEX 1090X PBT-GF30-V0

    Si1553DL

    Abstract: D234
    Text: Si1553DL Vishay Siliconix Complementary 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel -20 rDS(on) (W) ID (A) 0.385 @ VGS = 4.5 V "0.70 0.630 @ VGS = 2.5 V "0.54 0.995 @ VGS = -4.5 V "0.44 1.800 @ VGS = -2.5 V "0.32 SOT-363 SC-70 (6-LEADS)


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    PDF Si1553DL OT-363 SC-70 08-Apr-05 D234

    67645

    Abstract: No abstract text available
    Text: Si1539CDL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


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    PDF Si1539CDL AN609, 6486u 9813u 8415u 7784m 67645

    Si1563EDH

    Abstract: diode 0750 SI1563EDH-T1
    Text: New Product Si1563EDH Vishay Siliconix Complementary 20-V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 rDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.0 0.490 at VGS = - 4.5 V


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    PDF Si1563EDH OT-363 SC-70 SC-70 18-Jul-08 diode 0750 SI1563EDH-T1

    MARKING CODE EA

    Abstract: "leadframe material" DIP marking EA sot-363 dual mosfet si1563EDH-T1-E3 S12125
    Text: Si1563EDH Vishay Siliconix Complementary 20 V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1 0.490 at VGS = - 4.5 V -1


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    PDF Si1563EDH SC-70 OT-363 SC-70 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 MARKING CODE EA "leadframe material" DIP marking EA sot-363 dual mosfet si1563EDH-T1-E3 S12125

    Untitled

    Abstract: No abstract text available
    Text: Si1553CDL Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY N-Channel P-Channel VDS (V) RDS(on) () ID (A)a 0.390 at VGS = 4.5 V 0.7 20 0.510 at VGS = 2.7 V 0.5 - 20 0.578 at VGS = 2.5 V 0.5 0.850 at VGS = - 4.5 V - 0.5 1.35 at VGS = - 2.7 V


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    PDF Si1553CDL 2002/95/EC OT-363 SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si1563EDH

    Abstract: "MARKING CODE EA"
    Text: Si1563EDH New Product Vishay Siliconix Complementary 20-V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.280 @ VGS = 4.5 V 1.28 D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 2000 V D Thermally Enhanced SC-70 Package 0.360 @ VGS = 2.5 V


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    PDF Si1563EDH SC-70 OT-363 SC-70 S-03943--Rev. 21-May-01 "MARKING CODE EA"

    Si1539DL

    Abstract: No abstract text available
    Text: SPICE Device Model Si1539DL Vishay Siliconix N- and P-Channel 30-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    PDF Si1539DL 28-Jul-00