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    SI3457 Price and Stock

    Vishay Siliconix SI3457CDV-T1-GE3

    MOSFET P-CH 30V 5.1A 6TSOP
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    DigiKey SI3457CDV-T1-GE3 Digi-Reel 27,910 1
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    SI3457CDV-T1-GE3 Reel 27,000 3,000
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    Quest Components SI3457CDV-T1-GE3 197
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    New Advantage Corporation SI3457CDV-T1-GE3 45,000 1
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    Vishay Siliconix SI3457CDV-T1-E3

    MOSFET P-CH 30V 5.1A 6TSOP
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    DigiKey SI3457CDV-T1-E3 Cut Tape 18,310 1
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    SI3457CDV-T1-E3 Digi-Reel 18,310 1
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    SI3457CDV-T1-E3 Reel 15,000 3,000
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    Vishay Siliconix SI3457CDV-T1-BE3

    P-CHANNEL 30-V (D-S) MOSFET
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    DigiKey SI3457CDV-T1-BE3 Digi-Reel 4,426 1
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    SI3457CDV-T1-BE3 Cut Tape 4,426 1
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    SI3457CDV-T1-BE3 Reel 3,000 3,000
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    onsemi SI3457DV

    MOSFET P-CH 30V 4A SUPERSOT6
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    SI3457DV Digi-Reel 1
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    Bristol Electronics SI3457DV 23 7
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    Quest Components SI3457DV 18
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    Vishay Siliconix SI3457BDV-T1-E3

    MOSFET P-CH 30V 3.7A 6TSOP
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    RS SI3457BDV-T1-E3 Bulk 3,000
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    Bristol Electronics SI3457BDV-T1-E3 860 6
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    Quest Components SI3457BDV-T1-E3 688
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    SI3457 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI3457BDV Vishay Siliconix P-Channel 30-V (D-S) MOSFET Original PDF
    Si3457BDV SPICE Device Model Vishay P-Channel 30-V (D-S) MOSFET Original PDF
    SI3457BDV-T1 Vishay Siliconix P-Channel 30-V (D-S) MOSFET Original PDF
    SI3457BDV-T1-E3 Vishay Siliconix P-Channel 30-V (D-S) MOSFET Original PDF
    SI3457BDV-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 3.7A 6-TSOP Original PDF
    SI3457BDV-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 3.7A 6-TSOP Original PDF
    SI3457CDV-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 5.1A 6-TSOP Original PDF
    SI3457CDV-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 5.1A 6-TSOP Original PDF
    SI3457DV Fairchild Semiconductor Single P-Channel Logic Level PowerTrench MOSFET Original PDF
    Si3457DV Toshiba Power MOSFETs Cross Reference Guide Original PDF
    Si3457DV Vishay Intertechnology P-Channel 30-V (D-S) MOSFET Original PDF
    SI3457DV_NF073 Fairchild Semiconductor Single P-Channel Logic Level PowerTrench MOSFET Original PDF
    SI3457DV_NL Fairchild Semiconductor Single P-Channel Logic Level PowerTrench MOSFET Original PDF
    SI3457DV-T1 Vishay Intertechnology P-Channel 30-V (D-S) MOSFET Original PDF

    SI3457 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    3271

    Abstract: AN609 Si3457CDV 162609
    Text: Si3457CDV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When


    Original     		Si3457CDV AN609, 24-Apr-08 3271 AN609 162609 PDF

    si3457dv

    Abstract: No abstract text available
    Text: Si3457DV P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 rDS(on) DS( ) (W) ID (A) 0.065 @ VGS = –10 V "4.3 0.100 @ VGS = –4.5 V "3.4 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 Power Dissipation Si3457DV—2.0 W (1, 2, 5, 6) D 2.85 mm


    Original     		Si3457DV Si3457DV--2 S-49562--Rev. 19-Dec-96 PDF

    Si3457BDV

    Abstract: Si3457BDV-T1
    Text: Si3457BDV Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.054 @ VGS = −10 V −5.0 0.100 @ VGS = −4.5 V −3.7 TSOP-6 Top View 3 mm 1 6 2 5 3 4 (4) S (3) G 2.85 mm (1, 2, 5, 6) D P-Channel MOSFET Ordering Information: Si3457BDV-T1


    Original     		Si3457BDV Si3457BDV-T1 Si3457BDV-T1--E3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si3457BDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.054 at VGS = - 10 V - 5.0 0.100 at VGS = - 4.5 V - 3.7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs TSOP-6


    Original     		Si3457BDV Si3457BDV-T1-E3 Si3457BDV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    SI3457BDV

    Abstract: No abstract text available
    Text: Si3457BDV New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.054 @ VGS = -10 V -5.0 0.100 @ VGS = -4.5 V - 3.7 -30 TSOP-6 Top View 1 (4) S 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		Si3457BDV S-21787--Rev. 07-Oct-02 PDF

    SI3457BDV

    Abstract: No abstract text available
    Text: Si3457BDV Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) ID (A) 0.054 @ VGS = - 10 V - 5.0 0.100 @ VGS = - 4.5 V - 3.7 TSOP-6 Top View 3 mm 1 6 2 5 3 4 (4) S (3) G (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET Ordering Information: Si3457BDV-T1


    Original     		Si3457BDV Si3457BDV-T1 S-31990--Rev. 13-Oct-03 PDF

    Vishay DaTE CODE tsop-6

    Abstract: SI3457CDV-T1-GE
    Text: New Product Si3457CDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A)a 0.074 at VGS = - 10 V - 5.1 0.113 at VGS = - 4.5 V - 4.1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		Si3457CDV Si3457CDV-T1-E3 Si3457CDV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 Vishay DaTE CODE tsop-6 SI3457CDV-T1-GE PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si3457CDV www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si3457CDV 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Si3457BDV

    Abstract: Si3457BDV-T1
    Text: Si3457BDV Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.054 @ VGS = −10 V −5.0 0.100 @ VGS = −4.5 V −3.7 TSOP-6 Top View 3 mm 1 6 2 5 3 4 (4) S (3) G 2.85 mm (1, 2, 5, 6) D P-Channel MOSFET Ordering Information: Si3457BDV-T1


    Original     		Si3457BDV Si3457BDV-T1 Si3457BDV-T1--E3 S-40424--Rev. 15-Mar-04 PDF

    si3457dv

    Abstract: No abstract text available
    Text: Si3457DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –4 A, –30 V.


    Original     		Si3457DV PDF

    Untitled

    Abstract: No abstract text available
    Text: Si3457DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –4 A, –30 V.


    Original     		Si3457DV PDF

    Si3457CDV

    Abstract: Si3457CDV-T1-E3
    Text: New Product Si3457CDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A)a 0.074 at VGS = - 10 V - 5.1 0.113 at VGS = - 4.5 V - 4.1 • TrenchFET Power MOSFET Qg (Typ.) APPLICATIONS 5.1 nC RoHS COMPLIANT


    Original     		Si3457CDV Si3457CDV-T1-E3 08-Apr-05 PDF

    Si3457BDV

    Abstract: Si3457BDV-T1-E3
    Text: Si3457BDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.054 at VGS = - 10 V - 5.0 0.100 at VGS = - 4.5 V - 3.7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs TSOP-6


    Original     		Si3457BDV Si3457BDV-T1-E3 Si3457BDV-T1-GE3 11-Mar-11 PDF

    Si3457CDV

    Abstract: Si3457CDV-T1-E3 Si3457CDV-T1-GE3
    Text: New Product Si3457CDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A)a 0.074 at VGS = - 10 V - 5.1 0.113 at VGS = - 4.5 V - 4.1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		Si3457CDV Si3457CDV-T1-E3 Si3457CDV-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si3457CDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A)a 0.074 at VGS = - 10 V - 5.1 0.113 at VGS = - 4.5 V - 4.1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		Si3457CDV Si3457CDV-T1-E3 Si3457CDV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Si3457CDV

    Abstract: Si3457CDV-T1-E3 Si3457CDV-T1-GE3
    Text: New Product Si3457CDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A)a 0.074 at VGS = - 10 V - 5.1 0.113 at VGS = - 4.5 V - 4.1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		Si3457CDV Si3457CDV-T1-E3 Si3457CDV-T1-GE3 18-Jul-08 PDF

    AN609

    Abstract: Si3457BDV
    Text: Si3457BDV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si3457BDV AN609 01-Mar-06 PDF

    Si3456BDV

    Abstract: Si3457BDV Si3457BDV SPICE Device Model
    Text: SPICE Device Model Si3457BDV Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si3457BDV 18-Jul-08 Si3456BDV Si3457BDV SPICE Device Model PDF

    Si3457DV

    Abstract: No abstract text available
    Text: Si3457DV Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) DS( ) (W) ID (A) 0.065 @ VGS = –10 V "4.3 0.100 @ VGS = –4.5 V "3.4 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 2.85 mm (1, 2, 5, 6) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		Si3457DV 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si3457DV P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 rDS(on) DS( ) (W) ID (A) 0.065 @ VGS = –10 V "4.3 0.100 @ VGS = –4.5 V "3.4 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 Power Dissipation Si3457DV—2.0 W (1, 2, 5, 6) D 2.85 mm


    Original     		Si3457DV Si3457DV--2 S-49562--Rev. 19-Dec-96 PDF

    Si3457BDV

    Abstract: No abstract text available
    Text: Si3457BDV Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.054 @ VGS = - 10 V - 5.0 0.100 @ VGS = - 4.5 V - 3.7 - 30 TSOP-6 Top View 1 (4) S 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		Si3457BDV S-03661--Rev. 07-Apr-03 PDF

    Si3457BDV

    Abstract: Si3457DV-T1 Si3457BDV-T1 Si3457BDV-T1-E3 Si3457DV
    Text: Specification Comparison Vishay Siliconix Si3457BDV vs. Si3457DV Description: P-Channel, 30 V D-S MOSFET Package: TSOP-6 Pin Out: Identical Part Number Replacements: Si3457BDV-T1 Replaces Si3457DV-T1 Si3457BDV-T1-E3 (Lead (Pb)-free version) Replaces Si3457DV-T1


    Original     		Si3457BDV Si3457DV Si3457BDV-T1 Si3457DV-T1 Si3457BDV-T1-E3 06-Nov-06 PDF

    Si3457CDV-T1-GE3

    Abstract: SI3457 Si3457CDV Si3457BDV Si3457BDV-T1 Si3457BDV-T1-E3 Si3457CDV-T1-E3
    Text: Specification Comparison Vishay Siliconix Si3457CDV vs. Si3457BDV Description: Package: Pin Out: P-Channel, 30-V D-S MOSFET TSOP-6 Identical Part Number Replacements: Si3457CDV-T1-GE3 replaces Si3457BDV-T1-GE3 Si3457CDV-T1-E3 or Si3457CDV-T1-GE3 replaces Si3457BDV-T1-E3


    Original     		Si3457CDV Si3457BDV Si3457CDV-T1-GE3 Si3457BDV-T1-GE3 Si3457CDV-T1-E3 Si3457BDV-T1-E3 Si3457BDV-T1 SI3457 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si3457DV VISH A Y Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 4* $ r DS(ON) (& ) Id (A) 0.065 @ V GS = —10 V ± 4 .3 0.100 @ V g s = ^ . 5 V ± 3 .4 -3 0 9 ° ' (4) S Q TSO P-6 Top View 1 6 2 5 3 4 6 ( 1 ,2 ,5 , 6) D •2.85 mm ■ P-Channel M O S FE T


    OCR Scan     		Si3457DV S-56944â 23-Nov-98 PDF