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    Vishay Intertechnologies SI4366DY-E3

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    SI4366DY Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si4366DY Vishay Intertechnology N-Channel 30-V (D-S) MOSFET Original PDF
    SI4366DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET Original PDF
    Si4366DY SPICE Device Model Vishay N-Channel 30-V (D-S) MOSFET Original PDF

    SI4366DY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    S-20214-Rev

    Abstract: Si4366DY
    Text: Si4366DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0048 @ VGS = 10 V 20 0.0055 @ VGS = 4.5 V 19


    Original     		PDF Si4366DY S-20214--Rev. 01-Apr-02 S-20214-Rev

    Untitled

    Abstract: No abstract text available
    Text: Si4366DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D 100% RG Tested PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0048 @ VGS = 10 V 20 0.0055 @ VGS = 4.5 V


    Original     		PDF Si4366DY 08-Apr-05

    Si4366DY

    Abstract: No abstract text available
    Text: Si4366DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D 100% RG Tested PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0048 @ VGS = 10 V 20 0.0055 @ VGS = 4.5 V


    Original     		PDF Si4366DY 70ance, S-03662--Rev. 14-Apr-03

    Si4366DY

    Abstract: Si4366DY-T1 Si4366DY-T1-E3
    Text: Si4366DY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.0048 at VGS = 10 V 20 0.0055 at VGS = 4.5 V 19 • TrenchFET Power MOSFET • Optimized for “Low Side” Synchronous Rectifier Operation


    Original     		PDF Si4366DY Si4366DY-T1 Si4366DY-T1-E3 18-Jul-08

    Si4366DY

    Abstract: No abstract text available
    Text: \\\ SPICE Device Model Si4366DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4366DY 0-to-10V 30-Apr-02

    Untitled

    Abstract: No abstract text available
    Text: Si4366DY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.0048 at VGS = 10 V 20 0.0055 at VGS = 4.5 V 19 • TrenchFET Power MOSFET • Optimized for “Low Side” Synchronous Rectifier Operation


    Original     		PDF Si4366DY Si4366DY-T1 Si4366DY-T1-E3 08-Apr-05

    71917

    Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
    Text: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller


    Original     		PDF AN607 Si9137 SSOP-28 Si9910 Si9912 Si9913 10-Oct-02 71917 level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    q406 transistor

    Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
    Text: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original     		PDF SiP41109 SiP41110 SiP41111 75/2A q406 transistor SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS

    sud*50n025-06p

    Abstract: SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud*50n025-09p SI2301ADS SI4732CY si9110
    Text: SELECTOR GUIDE V I S H A Y I N T E R T E C H N O L O G Y, I N C . Power MOSFETs for DC/DC Applications Siliconix LITTLE FOOT LITTLE FOOT® Plus Tr e n c h F E T ® WFET ChipFET® P ow e r PA K ® Application-Specific MOSFETs w w w. v i s h a y. c o m


    Original     		PDF VSA-SG0019-0310 sud*50n025-06p SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud*50n025-09p SI2301ADS SI4732CY si9110