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    SI44 Price and Stock

    Vishay Siliconix SI4401DDY-T1-GE3

    MOSFET P-CH 40V 16.1A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4401DDY-T1-GE3 Cut Tape 15,801 1
    • 1 $1.25
    • 10 $0.788
    • 100 $1.25
    • 1000 $0.36705
    • 10000 $0.36705
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    SI4401DDY-T1-GE3 Digi-Reel 15,801 1
    • 1 $1.25
    • 10 $0.788
    • 100 $1.25
    • 1000 $0.36705
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    SI4401DDY-T1-GE3 Reel 15,000 2,500
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    • 10000 $0.32686
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    RS SI4401DDY-T1-GE3 Bulk 2,500
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    • 10000 $0.73
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    New Advantage Corporation SI4401DDY-T1-GE3 215,000 1
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    • 10000 $0.3571
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    Vishay Siliconix SI4436DY-T1-GE3

    MOSFET N-CH 60V 8A 8SO
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    DigiKey SI4436DY-T1-GE3 Digi-Reel 13,260 1
    • 1 $1.45
    • 10 $0.917
    • 100 $1.45
    • 1000 $0.43444
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    SI4436DY-T1-GE3 Cut Tape 13,260 1
    • 1 $1.45
    • 10 $0.917
    • 100 $1.45
    • 1000 $0.43444
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    SI4436DY-T1-GE3 Reel 12,500 2,500
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    • 10000 $0.38838
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    RS SI4436DY-T1-GE3 Bulk 20
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    • 1000 $0.86
    • 10000 $0.82
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    New Advantage Corporation SI4436DY-T1-GE3 2,500 1
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    • 10000 $0.4112
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    Vishay Siliconix SI4421DY-T1-E3

    MOSFET P-CH 20V 10A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4421DY-T1-E3 Cut Tape 9,468 1
    • 1 $2.83
    • 10 $1.833
    • 100 $2.83
    • 1000 $0.94022
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    SI4421DY-T1-E3 Digi-Reel 9,468 1
    • 1 $2.83
    • 10 $1.833
    • 100 $2.83
    • 1000 $0.94022
    • 10000 $0.94022
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    SI4421DY-T1-E3 Reel 7,500 2,500
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    • 10000 $0.84725
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    RS SI4421DY-T1-E3 Bulk 2,500
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    • 10000 $2.04
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    New Advantage Corporation SI4421DY-T1-E3 2,500 1
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    • 10000 $1.15
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    Vishay Siliconix SI4434DY-T1-E3

    MOSFET N-CH 250V 2.1A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4434DY-T1-E3 Digi-Reel 8,790 1
    • 1 $3.68
    • 10 $2.407
    • 100 $3.68
    • 1000 $1.27547
    • 10000 $1.27547
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    SI4434DY-T1-E3 Reel 7,500 2,500
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    • 10000 $1.2095
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    Vishay Siliconix SI4425BDY-T1-GE3

    MOSFET P-CH 30V 8.8A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4425BDY-T1-GE3 Digi-Reel 2,664 1
    • 1 $2.69
    • 10 $1.734
    • 100 $2.69
    • 1000 $0.8835
    • 10000 $0.8835
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    SI4425BDY-T1-GE3 Cut Tape 2,664 1
    • 1 $2.69
    • 10 $1.734
    • 100 $2.69
    • 1000 $0.8835
    • 10000 $0.8835
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    Find more SI44 price and stock on Findchips.com

    SI44 Datasheets (450)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4401BDY Vishay Siliconix P-Channel 40-V (D-S) MOSFET Original PDF
    SI4401BDY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 40V 8.7A 8-SOIC Original PDF
    SI4401BDY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 40V 8.7A 8-SOIC Original PDF
    SI4401DDY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 40V 16.1A 8-SOIC Original PDF
    Si4401DY Vishay Intertechnology P-Channel 40-V (D-S) MOSFET Original PDF
    SI4401DY Vishay Siliconix P-Channel 40-V (D-S) MOSFET Original PDF
    Si4401DY SPICE Device Model Vishay P-Channel 40-V (D-S) MOSFET Original PDF
    SI4401DY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 40V 8.7A 8-SOIC Original PDF
    SI4401DY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 40V 8.7A 8-SOIC Original PDF
    SI4401FDY-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHAN 40V SO-8 Original PDF
    SI4403BDY Vishay Siliconix MOSFETs Original PDF
    Si4403BDY SPICE Device Model Vishay P-Channel 1.8-V (G-S) MOSFET Original PDF
    SI4403BDY-T1 Vishay P-Channel 1.8-V (G-S) MOSFET Original PDF
    SI4403BDY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 7.3A 8-SOIC Original PDF
    SI4403BDY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 7.3A 8SOIC Original PDF
    SI4403CDY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 13.4A 8SOIC Original PDF
    SI4403DDY-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHANNEL 20V 8SOIC Original PDF
    Si4403DY Vishay Intertechnology P-Channel 1.8-V (G-S) MOSFET Original PDF
    SI4403DY Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET Original PDF
    Si4404DY Vishay Intertechnology N-Channel 30 V (D-S) MOSFET Original PDF
    ...

    SI44 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SI4431CDY

    Abstract: No abstract text available
    Text: New Product Si4431CDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.032 at VGS = - 10 V - 9.0 0.049 at VGS = - 4.5 V - 5.8 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4431CDY Si4431CDY-T1-E3 Si4431CDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    s0913

    Abstract: No abstract text available
    Text: Si4486EY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 7.9 0.028 at VGS = 6.0 V 7.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature


    Original     		PDF Si4486EY 2002/95/EC Si4486EY-T1-E3 Si4486EY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 s0913

    Untitled

    Abstract: No abstract text available
    Text: Si4484EY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.034 at VGS = 10 V 6.9 0.040 at VGS = 6.0 V 6.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature


    Original     		PDF Si4484EY 2002/95/EC Si4484EY-T1-E3 Si4484EY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Diode HER 507

    Abstract: No abstract text available
    Text: Si4412DY Vishay Siliconix N-Channel 30-V D-S Rated MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC ID (A) 0.028 at VGS = 10 V


    Original     		PDF Si4412DY 2002/95/EC Si4412DY-T1-E3 Si4412DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 Diode HER 507

    Untitled

    Abstract: No abstract text available
    Text: Si4401DDY Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.015 at VGS = - 10 V - 16.1 0.022 at VGS = - 4.5 V - 13.3 VDS (V) - 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4401DDY 2002/95/EC Si4401DDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SI4430B

    Abstract: si4430bd
    Text: Si4430BDY Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.006 at VGS = 4.5 V 17 Qg (Typ.) 24 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • 100 % Rg Tested


    Original     		PDF Si4430BDY Si4430BDY-T1-E3 Si4430BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI4430B si4430bd

    si4459a

    Abstract: SI4459 SI4459ADY-T1-GE3
    Text: Si4459ADY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A)d 0.005 at VGS = - 10 V - 29 0.00775 at VGS = - 4.5 V - 23 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4459ADY 2002/95/EC Si4459ADY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si4459a SI4459

    Si4401DDY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4401DDY Vishay Siliconix P-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si4401DDY 18-Jul-08

    67341

    Abstract: si4403C si4403
    Text: New Product Si4403CDY Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0155 at VGS = - 4.5 V - 13.4 VDS (V) - 20 0.0195 at VGS = - 2.5 V - 12 0.0250 at VGS = - 1.8 V - 10.5 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si4403CDY 2002/95/EC Si4403CDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 67341 si4403C si4403

    bifa antenna

    Abstract: 868 printed antenna design HTA 200-S Si446x/Si4362
    Text: AN686 A NTENNAS FOR THE S i4 4 5 5 /4 3 5 X RF IC S 1. Introduction This application note provides guidelines and design examples to help users design antennas for the next generation EZRadio RF ICs. The matching principles for the Si4455 are described in detail in “AN693: Si4455


    Original     		PDF AN686 Si4455 AN693: Si4455 Si435x, Si446x AN643: Si446x/4362 AN685: Si4455/435x bifa antenna 868 printed antenna design HTA 200-S Si446x/Si4362

    Untitled

    Abstract: No abstract text available
    Text: AN658 S i 4 4 6 X AND A R I B S TD - T 6 7 C O M P L I A N C E AT 4 2 6 – 4 2 9 M H Z 1. Introduction This application note demonstrates the compliance of Si446x-B0 RFICs with the regulatory requirements of ARIB STD-T67 V1.1, dated November 30th 2005 in the 426/429 MHz band. Although other members of the Si446x


    Original     		PDF AN658 Si446x-B0 STD-T67 Si446x Si4461-B0 4461-TSC13D434 0x2201

    Untitled

    Abstract: No abstract text available
    Text: AN440 Si4430/31/32 R EGISTER D ESCRIPTIONS 1. Complete Register Summary Table 1. Register Descriptions Add R/W Function/Desc D7 D6 D5 Data D4 D3 D2 D1 D0 POR Default 00 R Device Type dt[4] dt[3] dt[2] dt[1] dt[0] 08h 01 R Device Version vc[4] vc[3] vc[2] vc[1]


    Original     		PDF AN440 Si4430/31/32

    Si4450DY

    Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z
    Text: Si4450DY 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		PDF Si4450DY CBVK741B019 F011 F63TNR F852 FDS9953A L86Z

    Si4430BDY

    Abstract: Si4430BDY-T1-E3 Si4430BDY-T1-GE3
    Text: Si4430BDY Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.006 at VGS = 4.5 V 17 Qg (Typ.) 24 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • 100 % Rg Tested


    Original     		PDF Si4430BDY Si4430BDY-T1-E3 Si4430BDY-T1-GE3 11-Mar-11

    Si4459ADY

    Abstract: No abstract text available
    Text: New Product Si4459ADY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.005 at VGS = - 10 V - 29 0.00775 at VGS = - 4.5 V - 23 VDS (V) - 30 • • • • Qg (Typ.) 61 nC Halogen-free TrenchFET Power MOSFET 100 % Rg Tested


    Original     		PDF Si4459ADY Si4459ADY-T1-GE3 150ed 08-Apr-05

    Si4410BDY

    Abstract: Si4410BDY-T1-E3 Si4410BDY-T1-GE3
    Text: Si4410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0135 at VGS = 10 V 10 0.020 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si4410BDY 2002/95/EC Si4410BDY-T1-E3 Si4410BDY-T1-GE3 11-Mar-11

    Si4473DY

    Abstract: No abstract text available
    Text: Si4473DY New Product Vishay Siliconix P-Channel 14-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.011 @ VGS = –4.5 V –13 APPLICATION 0.016 @ VGS = –2.5 V –11 D Battery Switch for Portable Equipment –14


    Original     		PDF Si4473DY S-03657--Rev. 07-May-01

    NS4160

    Abstract: Si4463DY 4463 SO-8 4463 SO8 MOSFET
    Text: Si4463DY P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V – 12V .


    Original     		PDF Si4463DY NS4160 4463 SO-8 4463 SO8 MOSFET

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4497DY Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0033 at VGS = - 10 V - 36 0.0046 at VGS = - 4.5 V - 29 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4497DY 2002/95/EC Si4497DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si4426DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.025 at VGS = 4.5 V ± 8.5 0.035 at VGS = 2.5 V ± 7.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/96/EC


    Original     		PDF Si4426DY 2002/96/EC Si4426DY-T1-E3 Si4426DY-T1-GE3 18-Jul-08

    Si4487DY-T1-GE3

    Abstract: si4487 65473
    Text: New Product Si4487DY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0205 at VGS = - 10 V - 11.6 0.0375 at VGS = - 4.5 V - 8.6 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4487DY 2002/95/EC Si4487DY-T1-GE3 18-Jul-08 si4487 65473

    SI4470EY-T1-E3

    Abstract: Si4470EY
    Text: Si4470EY Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 0.011 at VGS = 10 V 12.7 0.013 at VGS = 6.0 V 11.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature


    Original     		PDF Si4470EY 2002/95/EC Si4470EY-T1-E3 Si4470EY-T1-GE3 18-Jul-08

    MS-012AA

    Abstract: Si4410DY
    Text: PD - 91853C Si4410DY HEXFET Power MOSFET l l l l l N-Channel MOSFET Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S VDSS = 30V RDS on = 0.0135Ω T o p V ie w Description This N-channel HEXFET® Power MOSFET is produced


    Original     		PDF 91853C Si4410DY 800mW MS-012AA

    Untitled

    Abstract: No abstract text available
    Text: Si4420DY Single N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		PDF Si4420DY