S0913 Search Results
S0913 Price and Stock
OMRON Electronic Components LLC XM2S-0913CONN BACKSHELL 9POS 180DEG SHLD |
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XM2S-0913 | Bulk | 42 | 1 |
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XM2S-0913 | 100 |
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Pi Supply PIS-0913RASPBERRY USB NINTENDO NES GAMEP |
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Essentra Components 12SWS0913WASHER SHOULDER NYLON |
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12SWS0913 | Bulk | 1,000 |
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Panasonic Electronic Components EYG-S091310THERM PAD 125MMX90MM GRAY |
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EYG-S091310 | Bulk | 7 Weeks | 20 |
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OMRON Corporation XM2S-0913- Bulk (Alt: XM2S0913BYOMZ) |
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XM2S-0913 | Bulk | 111 Weeks | 50 |
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XM2S-0913 | Bulk | 428 | 0 Weeks, 1 Days | 1 |
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S0913 Datasheets Context Search
Catalog Datasheet |
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s0913Contextual Info: Si4486EY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 7.9 0.028 at VGS = 6.0 V 7.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature |
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Si4486EY 2002/95/EC Si4486EY-T1-E3 Si4486EY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 s0913 | |
Contextual Info: Si4484EY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.034 at VGS = 10 V 6.9 0.040 at VGS = 6.0 V 6.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature |
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Si4484EY 2002/95/EC Si4484EY-T1-E3 Si4484EY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
SI4850EY-t1g
Abstract: si4850
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Si4850EY 2002/95/EC Si4850EY-T1-E3 Si4850EY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI4850EY-t1g si4850 | |
Si9407AEYContextual Info: Si9407AEY Vishay Siliconix P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.120 at VGS = - 10 V ± 3.5 0.15 at VGS = - 4.5 V ± 3.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs |
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Si9407AEY 2002/95/EC Si9407AEY-T1-E3 Si9407AEY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: New Product Si3456DDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)d 0.040 at VGS = 10 V 6.3 0.050 at VGS = 4.5 V 5.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si3456DDV 2002/95/EC Si3456DDV-T1-E3 Si3456DDV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
SiE844DF-T1-E3
Abstract: SiE844DF-T1-GE3 SiE844DF
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SiE844DF 2002/95/EC 11-Mar-11 SiE844DF-T1-E3 SiE844DF-T1-GE3 | |
Contextual Info: SiE818DF Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling |
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SiE818DF 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: Si4559EY Vishay Siliconix N- and P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel - 60 RDS(on) (Ω) ID (A) 0.055 at VGS = 10 V ± 4.5 0.075 at VGS = 4.5 V ± 3.9 0.120 at VGS = - 10 V ± 3.1 0.150 at VGS = - 4.5 V |
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Si4559EY 2002/95/EC Si4559EY-T1-E3 Si4559EY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
SQ3456EV
Abstract: SQ3456EV-T1-GE3
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SQ3456EV 2002/95/EC AEC-Q101 SQ3456EV-T1-GE3 18-Jul-08 SQ3456EV SQ3456EV-T1-GE3 | |
SI4470EY-T1-E3
Abstract: Si4470EY
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Si4470EY 2002/95/EC Si4470EY-T1-E3 Si4470EY-T1-GE3 18-Jul-08 | |
si5458Contextual Info: New Product Si5458DU Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d, e 0.041 at VGS = 10 V 6 0.051 at VGS = 4.5 V 6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si5458DU 2002/95/EC Si5458DU-T1-GE3 18-Jul-08 si5458 | |
Si4948EYContextual Info: Si4948EY Vishay Siliconix Dual P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.120 at VGS = - 10 V ± 3.1 0.150 at VGS = - 4.5 V ± 2.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs |
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Si4948EY 2002/95/EC Si4948EY-T1-E3 Si4948EY-T1-GE3 18-Jul-08 | |
SUM40N15-38
Abstract: SUM40N15-38-E3
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SUM40N15-38 2002/95/EC O-263 SUM40N15-38-E3 18-Jul-08 SUM40N15-38 SUM40N15-38-E3 | |
Si9945AEY-T1-E3
Abstract: Si9945AEY SI9945 Si9945AEY-T1-GE3 SI9945A
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Si9945AEY 2002/95/EC Si9945AEY-T1-E3 Si9945AEY-T1-GE3 18-Jul-08 SI9945 SI9945A | |
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Contextual Info: New Product Si5906DU Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.031 at VGS = 10 V 6 0.040 at VGS = 4.5 V 6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si5906DU 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SiE822DF Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling |
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SiE822DF 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: New Product SiE862DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET • Ultra Low Thermal Resistance Using Top-Exposed PolarPAK® Package for |
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SiE862DF 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
SI9945AEY-T1Contextual Info: Si9945AEY Vishay Siliconix Dual N-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.080 at VGS = 10 V ± 3.7 0.100 at VGS = 4.5 V ± 3.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs |
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Si9945AEY 2002/95/EC Si9945AEY-T1-E3 Si9945AEY-T1-GE3 11-Mar-11 SI9945AEY-T1 | |
Contextual Info: SiE850DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen II Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling |
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SiE850DF 2002/95/EC 11-Mar-11 | |
Contextual Info: SiE808DF Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen II Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling |
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SiE808DF 2002/95/EC 11-Mar-11 | |
Contextual Info: SiE830DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd WFET Technology for Low Switching Losses • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling |
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SiE830DF 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
74485Contextual Info: SiE818DF Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling |
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SiE818DF 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 74485 | |
Contextual Info: Si3493BDV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0275 at VGS = - 4.5 V - 8.0a 0.034 at VGS = - 2.5 V - 7.9 0.045 at VGS = - 1.8 V - 2.2 • Halogen-free According to IEC 61249-2-21 Definition |
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Si3493BDV 2002/95/EC Si3493BDV-T1-E3 Si3493BDV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: New Product SiE860DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling |
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SiE860DF 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 |