Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SI4484EY Search Results

    SF Impression Pixel

    SI4484EY Price and Stock

    Vishay Siliconix SI4484EY-T1-E3

    MOSFET N-CH 100V 4.8A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4484EY-T1-E3 Digi-Reel 1
    • 1 $1.44
    • 10 $1.44
    • 100 $1.44
    • 1000 $1.44
    • 10000 $1.44
    		Buy Now
    SI4484EY-T1-E3 Cut Tape
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    SI4484EY-T1-E3 Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Vishay Siliconix SI4484EY-T1-GE3

    MOSFET N-CH 100V 4.8A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4484EY-T1-GE3 Reel 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.5784
    		Buy Now

    Vishay BLH SI4484EY-T1-E3

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics SI4484EY-T1-E3 1,475 2
    • 1 -
    • 10 $1.82
    • 100 $1.3068
    • 1000 $1.148
    • 10000 $1.148
    		Buy Now

    N/A SI4484EY-T1-E3

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics SI4484EY-T1-E3 54
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Vishay Intertechnologies SI4484EY-T1-E3

    TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,4.8A I(D),SO,LEAD FREE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components SI4484EY-T1-E3 1,180
    • 1 $3.75
    • 10 $3.75
    • 100 $3.75
    • 1000 $1.625
    • 10000 $1.625
    		Buy Now
    SI4484EY-T1-E3 1,180
    • 1 $3.75
    • 10 $3.75
    • 100 $3.75
    • 1000 $1.625
    • 10000 $1.625
    		Buy Now
    Find more SI4484EY price and stock on Findchips.com

    SI4484EY Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si4484EY Vishay Intertechnology N-Channel 100-V (D-S) MOSFET Original PDF
    SI4484EY Vishay Siliconix MOSFETs Original PDF
    Si4484EY SPICE Device Model Vishay N-Channel 100-V (D-S) MOSFET Original PDF
    SI4484EY-T1 Vishay Intertechnology N-Channel 100-V (D-S) MOSFET Original PDF
    SI4484EY-T1 Vishay Telefunken Original PDF
    SI4484EY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 4.8A 8-SOIC Original PDF
    SI4484EY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 4.8A 8-SOIC Original PDF

    SI4484EY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si4484EY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.034 at VGS = 10 V 6.9 0.040 at VGS = 6.0 V 6.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature


    Original     		PDF Si4484EY 2002/95/EC Si4484EY-T1-E3 Si4484EY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si4484EY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4484EY Vishay Siliconix N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4484EY S-60074Rev. 23-Jan-06

    Si4484EY

    Abstract: No abstract text available
    Text: Si4484EY New Product Vishay Siliconix N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.034 @ VGS = 10 V 6.9 0.040 @ VGS = 6.0 V 6.4 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4484EY S-02110--Rev. 02-Oct-00

    Si4484EY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4484EY Vishay Siliconix N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4484EY 16-Apr-01

    74107

    Abstract: 74107 data sheet AN609 Si4484EY
    Text: Si4484EY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4484EY AN609 02-Sep-05 74107 74107 data sheet

    SI4484EY

    Abstract: No abstract text available
    Text: Si4484EY New Product Vishay Siliconix N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.034 @ VGS = 10 V 6.9 0.040 @ VGS = 6.0 V 6.4 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4484EY S-01059--Rev. 22-May-00

    Si4484EY

    Abstract: Si4484EY-T1
    Text: Si4484EY Vishay Siliconix N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.034 @ VGS = 10 V 6.9 0.040 @ VGS = 6.0 V 6.4 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View Ordering Information: Si4484EY Si4484EY-T1 (with Tape and Reel)


    Original     		PDF Si4484EY Si4484EY-T1 08-Apr-05

    Si4484EY-T1-E3

    Abstract: Si4484EY Si4484EY-T1-GE3
    Text: Si4484EY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.034 at VGS = 10 V 6.9 0.040 at VGS = 6.0 V 6.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature


    Original     		PDF Si4484EY 2002/95/EC Si4484EY-T1-E3 Si4484EY-T1-GE3 10lectual 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si4484EY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.034 at VGS = 10 V 6.9 0.040 at VGS = 6.0 V 6.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature


    Original     		PDF Si4484EY 2002/95/EC Si4484EY-T1-E3 Si4484EY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si4484EY

    Abstract: Si4484EY-T1
    Text: Si4484EY Vishay Siliconix N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.034 @ VGS = 10 V 6.9 0.040 @ VGS = 6.0 V 6.4 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View Ordering Information: Si4484EY Si4484EY-T1 (with Tape and Reel)


    Original     		PDF Si4484EY Si4484EY-T1 S-03951--Rev. 26-May-03

    Si4484EY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4484EY Vishay Siliconix N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4484EY 18-Jul-08

    Si4484EY

    Abstract: Si4484EY-T1
    Text: Si4484EY Vishay Siliconix N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.034 @ VGS = 10 V 6.9 0.040 @ VGS = 6.0 V 6.4 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View Ordering Information: Si4484EY Si4484EY-T1 (with Tape and Reel)


    Original     		PDF Si4484EY Si4484EY-T1 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si4484EY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.034 at VGS = 10 V 6.9 0.040 at VGS = 6.0 V 6.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature


    Original     		PDF Si4484EY 2002/95/EC Si4484EY-T1-E3 Si4484EY-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si4484EY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.034 at VGS = 10 V 6.9 0.040 at VGS = 6.0 V 6.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature


    Original     		PDF Si4484EY 2002/95/EC Si4484EY-T1-E3 Si4484EY-T1-GE3 11-Mar-11

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    BS250KL-TR1-E3

    Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
    Text: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8


    Original     		PDF SI3865BDV-T1-E3CT-ND SI4720CY-T1-E3CT-ND SI6924AEDQ-T1-E3CT-ND SI1040X-T1-E3TR-ND SI1865DL-T1-E3TR-ND SI1869DH-T1-E3TR-ND SI3861BDV-T1-E3TR-ND SI3865BDV-T1-E3TR-ND SI4720CY-T1-E3TR-ND SI6924AEDQ-T1-E3TR-ND BS250KL-TR1-E3 si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    STF12A80

    Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
    Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer


    Original     		PDF 02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B

    PA2454NL

    Abstract: CDEP145-4R2 12v in 48v out fuel injector controller Mark Alexander A Current Feedback Audio Power Amp hybrid car charger inverter schematic diagram GRM033R60J104 schematic diagram car alternator built en voltage stepup ferrite transformer 24V to 2KV LTC3862 PA2467NL
    Text: LINEAR TECHNOLOGY JANUARY 2009 IN THIS ISSUE… COVER ARTICLE 2-Phase, Non-Synchronous Boost Controller Simplifies Design of High Voltage, High Current Supplies .1 Muthu Subramanian and Tick Houk Linear in the News… .2


    Original     		PDF 36VIN 1-800-4-LINEAR PA2454NL CDEP145-4R2 12v in 48v out fuel injector controller Mark Alexander A Current Feedback Audio Power Amp hybrid car charger inverter schematic diagram GRM033R60J104 schematic diagram car alternator built en voltage stepup ferrite transformer 24V to 2KV LTC3862 PA2467NL

    vishay zener diode 1A 30v

    Abstract: LM4041CYM3-ADJ VJ0603Y102KXAMT C3216X7R1H106 grm32df51h106za01 VJ0805Y102KXAMT shunt R010 BC846AMTF CDR7D43MN-4R7NC BC846A
    Text: MIC2196 LED Driver Evaluation Board Boost LED Driver w/PWM DIM Control General Description The MIC2196 current mode boost controller is used to implement a LED Driver with PWM DIM control Figure 1 . The LED series string is pulsed on and off by the PWM DIM input signal to provide true PWM dimming. When


    Original     		PDF MIC2196 30Vdc. M9999-013107-A vishay zener diode 1A 30v LM4041CYM3-ADJ VJ0603Y102KXAMT C3216X7R1H106 grm32df51h106za01 VJ0805Y102KXAMT shunt R010 BC846AMTF CDR7D43MN-4R7NC BC846A

    VN10KLS

    Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
    Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated


    Original     		PDF Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05

    IRFR3411

    Abstract: 3F smd transistor AN-7516 fdd3682 IRF540NS Si4484EY TPS2490 TPS2491 mosfet SOA testing Fairchild presentation
    Text: Application Report SLVA158 – July 2004 Hotswap Design using TPS2490/91 and MOSFET Transient Thermal Response Martin Patoka PMP Systems Power ABSTRACT Hotswap circuits rely on the thermal capacitance of the series-limiting MOSFET to dissipate the large transient energy under current- or power-limit operation. The peak


    Original     		PDF SLVA158 TPS2490/91 TPS2490 IRFR3411 3F smd transistor AN-7516 fdd3682 IRF540NS Si4484EY TPS2491 mosfet SOA testing Fairchild presentation

    q406 transistor

    Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
    Text: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original     		PDF SiP41109 SiP41110 SiP41111 75/2A q406 transistor SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS