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    SI4425 Price and Stock

    Vishay Siliconix SI4425DDY-T1-GE3

    MOSFET P-CH 30V 19.7A 8SO
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    DigiKey SI4425DDY-T1-GE3 Cut Tape 108,081 1
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    SI4425DDY-T1-GE3 Digi-Reel 108,081 1
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    SI4425DDY-T1-GE3 Reel 105,000 2,500
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    New Advantage Corporation SI4425DDY-T1-GE3 17,500 1
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    Vishay Siliconix SI4425FDY-T1-GE3

    MOSFET P-CH 30V 12.7/18.3A 8SOIC
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    DigiKey SI4425FDY-T1-GE3 Cut Tape 8,425 1
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    SI4425FDY-T1-GE3 Digi-Reel 8,425 1
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    SI4425FDY-T1-GE3 Reel 7,500 2,500
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    Vishay Siliconix SI4425BDY-T1-E3

    MOSFET P-CH 30V 8.8A 8SO
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    DigiKey SI4425BDY-T1-E3 Reel 4,868 2,500
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    SI4425BDY-T1-E3 Cut Tape 4,868 1
    • 1 $1.47
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    SI4425BDY-T1-E3 Digi-Reel 4,868 1
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    RS SI4425BDY-T1-E3 Bulk 2,500
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    Bristol Electronics SI4425BDY-T1-E3 60 3
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    Quest Components SI4425BDY-T1-E3 48
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    Vishay Siliconix SI4425BDY-T1-GE3

    MOSFET P-CH 30V 8.8A 8SO
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    DigiKey SI4425BDY-T1-GE3 Digi-Reel 2,664 1
    • 1 $2.2
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    SI4425BDY-T1-GE3 Cut Tape 2,664 1
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    SI4425BDY-T1-GE3 Reel 2,500
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    UMW SI4425DY

    MOSFET P-CH 30V 8.7A/11.6A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4425DY Reel 3,000
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    SI4425DY Digi-Reel 1
    • 1 $0.54
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    SI4425DY Cut Tape 1
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    Find more SI4425 price and stock on Findchips.com

    SI4425 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4425BDY Vishay Siliconix MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:30V; Case style:SO-8; Current, Id cont:8.8A; Current, Idm pulse:-50A; Power, Pd:1.5W; Resistance, Rds on:0.012R; SMD:1; Charge, gate p Original PDF
    SI4425BDY Vishay Siliconix MOSFETs Original PDF
    SI4425BDY Vishay Telefunken P-channel 30-v (d-s) Mosfet Original PDF
    SI4425BDY-E3 Vishay Siliconix P-Channel 30-V (D-S) MOSFET Original PDF
    Si4425BDY SPICE Device Model Vishay P-Channel 30-V (D-S) MOSFET Original PDF
    SI4425BDY-T1 Vishay Siliconix P-Channel 30-V (D-S) MOSFET Original PDF
    SI4425BDYT1E3 Vishay Siliconix TRANS,FET,P-CHAN,SOT23,30V,7A Original PDF
    SI4425BDY-T1-E3 Vishay Siliconix P-Channel 30-V (D-S) MOSFET Original PDF
    SI4425BDY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 8.8A 8-SOIC Original PDF
    SI4425BDY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 8.8A 8-SOIC Original PDF
    SI4425DDY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 19.7A 8-SOIC Original PDF
    SI4425DY Fairchild Semiconductor Single P-Channel, Logic Level, PowerTrench TM MOSF Original PDF
    Si4425DY Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SI4425DY Vishay P-Channel 30-V (D-S) MOSFET Original PDF
    Si4425DY Vishay Intertechnology P-Channel 30-V (D-S) MOSFET Original PDF
    SI4425DY Siliconix Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, P-Channel, -30V, Single, Pkg Style SO-8 Scan PDF
    SI4425DY_NL Fairchild Semiconductor Single P-Channel, Logic Level, PowerTrench MOSFET Original PDF
    Si4425DY SPICE Device Model Vishay P-Channel 30-V (D-S) MOSFET Original PDF
    SI4425FDY-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 12.7/18.3A 8SOIC Original PDF

    SI4425 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si4425DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0098 at VGS = 10 V - 19.7 0.0165 at VGS = 4.5 V - 15.2 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4425DDY Si4425DDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si4425DY

    Abstract: No abstract text available
    Text: Si4425DY Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) –30 ID (A) 0.014 @ VGS = –10 V "11 0.023 @ VGS = –4.5 V "8.5 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4425DY S-05840--Rev. 04-Mar-02

    Si4425BDY

    Abstract: 15TR13
    Text: SPICE Device Model Si4425BDY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4425BDY S-51095Rev. 13-Jun-05 15TR13

    Untitled

    Abstract: No abstract text available
    Text: Si4425DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0098 at VGS = 10 V - 19.7 0.0165 at VGS = 4.5 V - 15.2 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4425DDY Si4425DDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si4425BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Advanced High Cell Density Process PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.012 @ VGS = −10 V −11.4 APPLICATIONS 0.019 @ VGS = −4.5 V −9.1 D Load Switches


    Original     		PDF Si4425BDY Si4425BDY--T1 Si4425BDY--E3 Si4425BDY-T1--E3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si4425DY Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.014 @ VGS = –10 V "11 0.023 @ VGS = –4.5 V "8.5 –30 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4425DY S-49458--Rev. 17-Dec-96

    SI4425DY-T1

    Abstract: SI4425BDY Si4425DY Si4425BDY-E3 Si4425BDY-T1 Si4425BDY-T1-E3
    Text: Specification Comparison Vishay Siliconix Si4425BDY vs. Si4425DY Description: P-Channel, 30 V D-S MOSFET Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si4425BDY Replaces Si4425DY Si4425BDY-E3 (Lead (Pb)-free version) Replaces Si4425DY Si4425BDY-T1 Replaces Si4425DY-T1


    Original     		PDF Si4425BDY Si4425DY Si4425BDY-E3 Si4425BDY-T1 Si4425DY-T1 Si4425BDY-T1-E3

    Si4425BDY

    Abstract: Si4425BDY-T1-E3 Si4425BDY-T1-GE3
    Text: Si4425BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.012 at VGS = - 10 V - 11.4 0.019 at VGS = - 4.5 V - 9.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4425BDY 2002/95/EC Si4425BDY-T1-E3 Si4425BDY-T1-GE3 11-Mar-11

    Si4425DDY

    Abstract: Si4425DDY-T1-GE3
    Text: Si4425DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0098 at VGS = 10 V - 19.7 0.0165 at VGS = 4.5 V - 15.2 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4425DDY Si4425DDY-T1-GE3 11-Mar-11

    Si4425DY

    Abstract: No abstract text available
    Text: Si4425DY P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 rDS(on) (W) ID (A) 0.014 @ VGS = –10 V "11 0.023 @ VGS = –4.5 V "8.5 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si4425DY S-49458--Rev. 17-Dec-96

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4425DDY www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si4425DDY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: January 2001 Si4425DY Single P-Channel, Logic Level, PowerTrench MOSFET General Description Features -11 A, -30 V. RDS ON = 0.014 Ω @ VGS = -10 V, RDS(ON) = 0.020 Ω @ VGS = -4.5 V. This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench


    Original     		PDF Si4425DY OT-23

    SI4425BDY

    Abstract: Si4425BDY-T1-E3 Si4425BDY-T1-GE3 SI4425BDY-T1-E3 SO8
    Text: Si4425BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.012 at VGS = - 10 V - 11.4 0.019 at VGS = - 4.5 V - 9.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4425BDY 2002/95/EC Si4425BDY-T1-E3 Si4425BDY-T1-GE3 18-Jul-08 SI4425BDY-T1-E3 SO8

    Si4425DY

    Abstract: No abstract text available
    Text: Si4425DY Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) - 30 ID (A) 0.014 @ VGS = - 10 V "11 0.023 @ VGS = - 4.5 V "8.5 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4425DY 18-Jul-08

    Si4425DDY

    Abstract: Si4425DDY-T1-GE3
    Text: Si4425DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0098 at VGS = 10 V - 19.7 0.0165 at VGS = 4.5 V - 15.2 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4425DDY Si4425DDY-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si4425BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.012 at VGS = - 10 V - 11.4 0.019 at VGS = - 4.5 V - 9.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4425BDY 2002/96/EC Si4425BDY-T1-E3 Si4425BDY-T1-GE3 18-Jul-08

    DSA003103

    Abstract: Si4425BDY Si4425BDY-T1
    Text: Si4425BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 D TrenchFETr Power MOSFET D Advanced High Cell Density Process rDS(on) (W) ID (A) 0.012 @ VGS = - 10 V - 11.4 APPLICATIONS 0.019 @ VGS = - 4.5 V - 9.1 D Load Switches


    Original     		PDF Si4425BDY Si4425BDY-T1 S-31990--Rev. 13-Oct-03 DSA003103

    Untitled

    Abstract: No abstract text available
    Text: Si4425BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.012 at VGS = - 10 V - 11.4 0.019 at VGS = - 4.5 V - 9.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4425BDY 2002/95/EC Si4425BDY-T1-E3 Si4425BDY-T1-GE3 11-Mar-11

    mosfet 4800

    Abstract: Si4425DY S4945
    Text: Si4425DY Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.014 @ VGS = –10 V "11 0.023 @ VGS = –4.5 V "8.5 –30 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4425DY S-49458--Rev. 17-Dec-96 mosfet 4800 S4945

    7916

    Abstract: AN609 Si4425BDY
    Text: Si4425BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4425BDY AN609 31-Aug-05 7916

    mosfet 407

    Abstract: 2812 4311 4311 mosfet transistor AN609 Si4425DDY
    Text: Si4425DDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		PDF Si4425DDY AN609, 06-Feb-09 mosfet 407 2812 4311 4311 mosfet transistor AN609

    Untitled

    Abstract: No abstract text available
    Text: Si4425BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Advanced High Cell Density Process PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.012 @ VGS = −10 V −11.4 APPLICATIONS 0.019 @ VGS = −4.5 V −9.1 D Load Switches


    Original     		PDF Si4425BDY Si4425BDY--T1 Si4425BDY--E3 Si4425BDY-T1--E3 S-50366--Rev. 28-Feb-05

    SI4425DDY

    Abstract: SI4425DDY-T1-GE3 SI4425BDY SI4425BDY-T1-GE3 SI4425BDY-T1-E3 SO8 65188 SI4425BDY-T1-E3
    Text: Specification Comparison Vishay Siliconix Si4425DDY vs. Si4425BDY Description: Package: Pin Out: P-Channel, 30-V D-S MOSFET SO-8 Identical Part Number Replacements: Si4425DDY-T1-GE3 replaces Si4425BDY-T1-E3 Si4425DDY-T1-GE3 replaces Si4425BDY-T1-GE3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original     		PDF Si4425DDY Si4425BDY Si4425DDY-T1-GE3 Si4425BDY-T1-E3 Si4425BDY-T1-GE3 Cond019 15-Jul-09 SI4425BDY-T1-E3 SO8 65188

    21862

    Abstract: Si4425BDY S2186
    Text: Si4425BDY New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) D TrenchFETr Power MOSFET D Advanced High Cell Density Process rDS(on) (W) ID (A) 0.012 @ VGS = -10 V -1 1.4 APPLICATIONS 0.019 @ VGS = -4.5 V - 9.1 D Load Switches


    Original     		PDF Si4425BDY S-21862--Rev. 21-Oct-02 21862 S2186