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    SI4425DDY Search Results

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    SI4425DDY Price and Stock

    Vishay Siliconix SI4425DDY-T1-GE3

    MOSFET P-CH 30V 19.7A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4425DDY-T1-GE3 Digi-Reel 108,081 1
    • 1 $1.02
    • 10 $0.683
    • 100 $1.02
    • 1000 $0.3463
    • 10000 $0.3463
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    SI4425DDY-T1-GE3 Cut Tape 108,081 1
    • 1 $1.02
    • 10 $0.683
    • 100 $1.02
    • 1000 $0.3463
    • 10000 $0.3463
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    SI4425DDY-T1-GE3 Reel 105,000 2,500
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    • 10000 $0.31222
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    New Advantage Corporation SI4425DDY-T1-GE3 17,500 1
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    • 10000 $0.4143
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    Vishay Intertechnologies SI4425DDY-T1-GE3

    P-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI4425DDY-T1-GE3)
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    Avnet Americas SI4425DDY-T1-GE3 Reel 2,500 17 Weeks 2,500
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    Mouser Electronics SI4425DDY-T1-GE3 17,901
    • 1 $0.57
    • 10 $0.513
    • 100 $0.406
    • 1000 $0.336
    • 10000 $0.287
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    Verical SI4425DDY-T1-GE3 16,650 90
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    • 100 $0.35
    • 1000 $0.2937
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    SI4425DDY-T1-GE3 10,000 2,500
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    • 10000 $0.6919
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    Arrow Electronics SI4425DDY-T1-GE3 Cut Strips 3 17 Weeks 1
    • 1 $0.3087
    • 10 $0.3087
    • 100 $0.3087
    • 1000 $0.3087
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    Newark SI4425DDY-T1-GE3 Bulk 5,910 1
    • 1 $0.739
    • 10 $0.656
    • 100 $0.521
    • 1000 $0.464
    • 10000 $0.464
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    SI4425DDY-T1-GE3 Reel 2,500
    • 1 $0.273
    • 10 $0.273
    • 100 $0.273
    • 1000 $0.273
    • 10000 $0.273
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    TTI SI4425DDY-T1-GE3 Reel 15,000 2,500
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    • 10000 $0.28
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    TME SI4425DDY-T1-GE3 2,411 1
    • 1 $0.706
    • 10 $0.61
    • 100 $0.431
    • 1000 $0.305
    • 10000 $0.304
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    Avnet Asia SI4425DDY-T1-GE3 19 Weeks 2,500
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    • 10000 $0.32403
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    Chip1Stop SI4425DDY-T1-GE3 Cut Tape 16,650
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    • 10 $0.289
    • 100 $0.236
    • 1000 $0.235
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    SI4425DDY-T1-GE3 3
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    • 10 $0.502
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    Vishay Intertechnologies SI4425BDY-T1-E3

    MOSFETs 30V 11A 2.5W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI SI4425BDY-T1-E3 Reel 17,500 2,500
    • 1 -
    • 10 -
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    • 10000 $0.549
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    Others SI4425DDYT1GE3

    AVAILABLE EU
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    ComSIT USA SI4425DDYT1GE3 7,500
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    Vishay Huntington SI4425DDY-T1-GE3

    MOSFET P-CH 30V 19.7A 8-SOIC / Trans MOSFET P-CH 30V 19.7A 8-Pin SOIC N T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics SI4425DDY-T1-GE3 9,314
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    • 100 $1.165
    • 1000 $0.777
    • 10000 $0.777
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    SI4425DDY Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4425DDY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 19.7A 8-SOIC Original PDF

    SI4425DDY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si4425DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0098 at VGS = 10 V - 19.7 0.0165 at VGS = 4.5 V - 15.2 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4425DDY Si4425DDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si4425DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0098 at VGS = 10 V - 19.7 0.0165 at VGS = 4.5 V - 15.2 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4425DDY Si4425DDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si4425DDY

    Abstract: Si4425DDY-T1-GE3
    Text: Si4425DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0098 at VGS = 10 V - 19.7 0.0165 at VGS = 4.5 V - 15.2 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4425DDY Si4425DDY-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4425DDY www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si4425DDY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si4425DDY

    Abstract: Si4425DDY-T1-GE3
    Text: Si4425DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0098 at VGS = 10 V - 19.7 0.0165 at VGS = 4.5 V - 15.2 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4425DDY Si4425DDY-T1-GE3 18-Jul-08

    mosfet 407

    Abstract: 2812 4311 4311 mosfet transistor AN609 Si4425DDY
    Text: Si4425DDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		PDF Si4425DDY AN609, 06-Feb-09 mosfet 407 2812 4311 4311 mosfet transistor AN609

    SI4425DDY

    Abstract: SI4425DDY-T1-GE3 SI4425BDY SI4425BDY-T1-GE3 SI4425BDY-T1-E3 SO8 65188 SI4425BDY-T1-E3
    Text: Specification Comparison Vishay Siliconix Si4425DDY vs. Si4425BDY Description: Package: Pin Out: P-Channel, 30-V D-S MOSFET SO-8 Identical Part Number Replacements: Si4425DDY-T1-GE3 replaces Si4425BDY-T1-E3 Si4425DDY-T1-GE3 replaces Si4425BDY-T1-GE3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original     		PDF Si4425DDY Si4425BDY Si4425DDY-T1-GE3 Si4425BDY-T1-E3 Si4425BDY-T1-GE3 Cond019 15-Jul-09 SI4425BDY-T1-E3 SO8 65188

    Untitled

    Abstract: No abstract text available
    Text: Si4425DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0098 at VGS = 10 V - 19.7 0.0165 at VGS = 4.5 V - 15.2 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4425DDY Si4425DDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si4425DDY

    Abstract: 0631
    Text: SPICE Device Model Si4425DDY Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si4425DDY 18-Jul-08 0631

    Untitled

    Abstract: No abstract text available
    Text: Si4425DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0098 at VGS = 10 V - 19.7 0.0165 at VGS = 4.5 V - 15.2 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4425DDY Si4425DDY-T1-GE3 11-Mar-11

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477