Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SI4427 Search Results

    SF Impression Pixel

    SI4427 Price and Stock

    Vishay Siliconix SI4427BDY-T1-E3

    MOSFET P-CH 30V 9.7A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4427BDY-T1-E3 Cut Tape 1,032 1
    • 1 $2.19
    • 10 $1.401
    • 100 $2.19
    • 1000 $0.69653
    • 10000 $0.69653
    		Buy Now
    SI4427BDY-T1-E3 Digi-Reel 1,032 1
    • 1 $2.19
    • 10 $1.401
    • 100 $2.19
    • 1000 $0.69653
    • 10000 $0.69653
    		Buy Now
    SI4427BDY-T1-E3 Reel 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.5945
    		Buy Now

    Vishay Siliconix SI4427BDY-T1-GE3

    MOSFET P-CH 30V 9.7A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4427BDY-T1-GE3 Cut Tape 1
    • 1 $2.56
    • 10 $2.56
    • 100 $2.56
    • 1000 $2.56
    • 10000 $2.56
    		Buy Now
    SI4427BDY-T1-GE3 Digi-Reel 1
    • 1 $2.56
    • 10 $2.56
    • 100 $2.56
    • 1000 $2.56
    • 10000 $2.56
    		Buy Now
    SI4427BDY-T1-GE3 Reel 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.7375
    		Buy Now
    Quest Components SI4427BDY-T1-GE3 64
    • 1 $2.1
    • 10 $2.1
    • 100 $0.7875
    • 1000 $0.7875
    • 10000 $0.7875
    		Buy Now

    Vishay Intertechnologies SI4427BDY-T1-E3

    P Channel Mosfet, -30V, 12.6A, Soic; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:12.6A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:12V; Gate Source Threshold Voltage Max:1.4V Rohs Compliant: Yes |Vishay SI4427BDY-T1-E3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SI4427BDY-T1-E3 Cut Tape 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    SI4427BDY-T1-E3 Reel 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    TTI SI4427BDY-T1-E3 Reel 2,500 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.74
    		Buy Now

    Vishay Intertechnologies SI4427BDY-T1-GE3

    P Channel Mosfet, -30V, 12.6A, Soic, Full Reel; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:12.6A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:2.5V; Power Dissipation:1.5W Rohs Compliant: Yes |Vishay SI4427BDY-T1-GE3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SI4427BDY-T1-GE3 Reel 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    SI4427BDY-T1-GE3 Cut Tape 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Vishay Intertechnologies SI4427DY

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components SI4427DY 2,153
    • 1 $9.75
    • 10 $9.75
    • 100 $9.75
    • 1000 $4.875
    • 10000 $4.875
    		Buy Now
    Find more SI4427 price and stock on Findchips.com

    SI4427 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4427BDY Vishay Siliconix MOSFETs Original PDF
    SI4427BDY Vishay Telefunken P-channel 30-v (d-s) Mosfet Original PDF
    Si4427BDY SPICE Device Model Vishay P-Channel 30-V (D-S) MOSFET Original PDF
    SI4427BDY-T1 Vishay Telefunken Original PDF
    SI4427BDY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 9.7A 8-SOIC Original PDF
    SI4427BDY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 9.7A 8SOIC Original PDF
    Si4427DY Vishay Intertechnology P-Channel 30-V (D-S) MOSFET Original PDF
    SI4427DY Vishay Siliconix P-Channel 30-V (D-S) MOSFET Original PDF
    Si4427DY SPICE Device Model Vishay P-Channel 30-V (D-S) MOSFET Original PDF
    SI4427DY-T1 Vishay Intertechnology P-Channel 30-V (D-S) MOSFET Original PDF

    SI4427 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Si4427BDY

    Abstract: Si4427BDY-T1
    Text: Si4427BDY New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) ID (A) 0.0105 @ VGS = - 10 V - 12.6 0.0125 @ VGS = - 4.5 V - 11.5 0.0195 @ VGS = - 2.5 V - 9.2 D TrenchFETr Power MOSFETS S SO-8 S 1 8 D S


    Original     		Si4427BDY Si4427BDY-T1 S-31411--Rev. 07-Jul-03 PDF

    Si4427BDY-T1-E3

    Abstract: Si4427BDY-E3 Si4427BDY Si4427BDY-T1 Si4427DY Si4427DY-T1
    Text: Specification Comparison Vishay Siliconix Si4427BDY vs. Si4427DY Description: P-Channel, 30 V D-S MOSFET Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si4427BDY Replaces Si4427DY Si4427BDY-E3 (Lead (Pb)-free version) Replaces Si4427DY Si4427BDY-T1 Replaces Si4427DY-T1


    Original     		Si4427BDY Si4427DY Si4427BDY-E3 Si4427BDY-T1 Si4427DY-T1 Si4427BDY-T1-E3 PDF

    Si4427BDY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4427BDY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si4427BDY 0-to-10V 19-Sep-03 PDF

    Si4427DY

    Abstract: 71488
    Text: SPICE Device Model Si4427DY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si4427DY 13-Apr-01 71488 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4427BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.0105 at VGS = - 10 V - 12.6 - 30 0.0125 at VGS = - 4.5 V - 11.5 0.0195 at VGS = - 2.5 V - 9.2 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si4427BDY 2002/95/EC Si4427BDY-T1-E3 Si4427BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4427BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.0105 at VGS = - 10 V - 12.6 - 30 0.0125 at VGS = - 4.5 V - 11.5 0.0195 at VGS = - 2.5 V - 9.2 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si4427BDY 2002/95/EC Si4427BDY-T1-E3 Si4427BDY-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4427DY New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 FEATURES rDS(on) (W) ID (A) 0.0105 @ VGS = –10 V –13.3 0.0125 @ VGS = –4.5 V –12.2 0.0195 @ VGS = –2.5 V –9.8 D TrenchFETr Power MOSFETs S SO-8 S 1


    Original     		Si4427DY Si4427DY-T1 08-Apr-05 PDF

    74093

    Abstract: 7916 AN609 Si4427BDY
    Text: Si4427BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si4427BDY AN609 31-Aug-05 74093 7916 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4427BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.0105 at VGS = - 10 V - 12.6 - 30 0.0125 at VGS = - 4.5 V - 11.5 0.0195 at VGS = - 2.5 V - 9.2 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si4427BDY 2002/96/EC Si4427BDY-T1-E3 Si4427BDY-T1-GE3 18-Jul-08 PDF

    71488

    Abstract: Si4427DY
    Text: SPICE Device Model Si4427DY P-Channel 30-V D-S MOSFET Characteristics • P-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse


    Original     		Si4427DY 71488 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4427BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.0105 at VGS = - 10 V - 12.6 0.0125 at VGS = - 4.5 V - 11.5 0.0195 at VGS = - 2.5 V - 9.2 • TrenchFET Power MOSFETS Pb-free Available RoHS*


    Original     		Si4427BDY Si4427BDY-T1 Si4427BDY-T1-E3 18-Jul-08 PDF

    71308

    Abstract: Si4427DY
    Text: Si4427DY New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 30 rDS(on) (W) ID (A) 0.0105 @ VGS = –10 V –13.3 0.0125 @ VGS = –4.5 V –12.2 0.0195 @ VGS = –2.5 V –9.8 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G


    Original     		Si4427DY S-01828--Rev. 21-Aug-00 71308 PDF

    Si4427BDY-E3

    Abstract: Si4427BDY Si4427BDY-T1
    Text: Si4427BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.0105 @ VGS = −10 V −12.6 0.0125 @ VGS = −4.5 V −11.5 0.0195 @ VGS = −2.5 V −9.2 D TrenchFETr Power MOSFETS SO-8 S 1 8 D S 2 7 D S


    Original     		Si4427BDY Si4427BDY-T1 Si4427BDY--E3 Si4427BDY-T1--E3 S-50129--Rev. 24-Jan-05 Si4427BDY-E3 PDF

    Si4427BDY

    Abstract: si4427
    Text: SPICE Device Model Si4427BDY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si4427BDY 18-Jul-08 si4427 PDF

    Si4427BDY

    Abstract: Si4427BDY-T1 Si4427BDY-T1-E3 si4427
    Text: Si4427BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.0105 at VGS = - 10 V - 12.6 0.0125 at VGS = - 4.5 V - 11.5 0.0195 at VGS = - 2.5 V - 9.2 • TrenchFET Power MOSFETS Pb-free Available RoHS*


    Original     		Si4427BDY Si4427BDY-T1 Si4427BDY-T1-E3 08-Apr-05 si4427 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4427BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.0105 at VGS = - 10 V - 12.6 - 30 0.0125 at VGS = - 4.5 V - 11.5 0.0195 at VGS = - 2.5 V - 9.2 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si4427BDY 2002/95/EC Si4427BDY-T1-E3 Si4427BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4427BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.0105 @ VGS = −10 V −12.6 0.0125 @ VGS = −4.5 V −11.5 0.0195 @ VGS = −2.5 V −9.2 D TrenchFETr Power MOSFETS SO-8 S 1 8 D S 2 7 D S


    Original     		Si4427BDY Si4427BDY-T1 Si4427BDY--E3 Si4427BDY-T1--E3 08-Apr-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4427DY New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.0105 @ VGS = –10 V –13.3 0.0125 @ VGS = –4.5 V –12.2 0.0195 @ VGS = –2.5 V –9.8 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View


    Original     		Si4427DY S-01828--Rev. 21-Aug-00 PDF

    SI4427BDY-T1-GE3

    Abstract: Si4427BDY Si4427BDY-T1-E3
    Text: Si4427BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.0105 at VGS = - 10 V - 12.6 - 30 0.0125 at VGS = - 4.5 V - 11.5 0.0195 at VGS = - 2.5 V - 9.2 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si4427BDY 2002/95/EC Si4427BDY-T1-E3 Si4427BDY-T1-GE3 18-Jul-08 PDF

    SI4435BDY

    Abstract: pcie connector
    Text: MIC2341/2341R Dual-Slot PCI Express Hot-Plug Controller General Description The MIC2341 is a dual-slot power controller supporting the power distribution requirements for Peripheral Component Interconnect Express PCI Express Hot-Plug compliant systems. The MIC2341 provides complete power control


    Original     		MIC2341/2341R MIC2341 M9999-102507-A SI4435BDY pcie connector PDF

    5a6 zener diode

    Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
    Text: Subscriber Linecard Table of Contents DATA LINE, Ethernet. 3 DATA LINE, Optical


    Original     		Si4418DY 130mOhm@ Si4420BDY Si6928DQ 35mOhm@ Si6954ADQ 53mOhm@ SiP2800 SUM47N10-24L 24mOhm@ 5a6 zener diode dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415 PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    BS250KL-TR1-E3

    Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
    Text: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8


    Original     		SI3865BDV-T1-E3CT-ND SI4720CY-T1-E3CT-ND SI6924AEDQ-T1-E3CT-ND SI1040X-T1-E3TR-ND SI1865DL-T1-E3TR-ND SI1869DH-T1-E3TR-ND SI3861BDV-T1-E3TR-ND SI3865BDV-T1-E3TR-ND SI4720CY-T1-E3TR-ND SI6924AEDQ-T1-E3TR-ND BS250KL-TR1-E3 si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3 PDF

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 PDF