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    SI4500 Price and Stock

    Vishay Siliconix SI4500BDY-T1-E3

    MOSFET N/P-CH 20V 6.6A 8SOIC
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    DigiKey SI4500BDY-T1-E3 Cut Tape 1
    • 1 $1.28
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    SI4500BDY-T1-E3 Digi-Reel 1
    • 1 $1.28
    • 10 $1.28
    • 100 $1.28
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    Vishay Siliconix SI4500BDY-T1-GE3

    MOSFET N/P-CH 20V 6.6A 8SOIC
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    DigiKey SI4500BDY-T1-GE3 Cut Tape
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    SI4500BDY-T1-GE3 Digi-Reel 1
    • 1 $1.04
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    Vishay Siliconix SI4500DY-T1

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    Bristol Electronics SI4500DY-T1 1,964
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    Quest Components SI4500DY-T1 13,772
    • 1 $2.05
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    • 100 $2.05
    • 1000 $0.943
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    SI4500DY-T1 1,571
    • 1 $3.28
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    • 100 $3.28
    • 1000 $1.23
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    Vishay Intertechnologies SI4500BDY-T1-GE3

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    Bristol Electronics SI4500BDY-T1-GE3 1,523
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    Vishay Intertechnologies SI4500BDY-T1

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics SI4500BDY-T1 1,515
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    Quest Components SI4500BDY-T1 1,212
    • 1 $1.2
    • 10 $1.2
    • 100 $0.6
    • 1000 $0.48
    • 10000 $0.48
    		Buy Now
    Find more SI4500 price and stock on Findchips.com

    SI4500 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI-45002 Bel Fuse SI-45002 Scan PDF
    SI4500BDY Vishay Siliconix Complementary MOSFET Half-Bridge (N- and P-Channel) Original PDF
    SI4500BDY-E3 Vishay Siliconix Complementary MOSFET Half-Bridge (N- and P-Channel) Original PDF
    Si4500BDY SPICE Device Model Vishay Complementary MOSFET Half-Bridge (N- and P-Channel) Original PDF
    SI4500BDY-T1 Vishay Siliconix Complementary MOSFET Half-Bridge (N- and P-Channel) Original PDF
    SI4500BDY-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 6.6A 8SOIC Original PDF
    SI4500BDY-T1-E3 Vishay Siliconix Complementary MOSFET Half-Bridge (N- and P-Channel) Original PDF
    SI4500BDY-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 6.6A 8-SOIC Original PDF
    Si4500DY Vishay Intertechnology Complementary MOSFET Half-Bridge (N- and P-Channel) Original PDF
    SI4500DY Vishay Siliconix Complementary MOSFET Half-Bridge (N- and P-Channel) Original PDF
    Si4500DY SPICE Device Model Vishay Complementary MOSFET Half-Bridge (N- and P-Channel) Original PDF

    SI4500 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si4500BDY Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.020 at VGS = 4.5 V 9.1 0.030 at VGS = 2.5 V 7.5 0.060 at VGS = - 4.5 V - 5.3 0.100 at VGS = - 2.5 V


    Original     		PDF Si4500BDY 2002/95/EC Si4500BDY-T1-E3 Si4500BDY-T1-GE3 11-Mar-11

    S-00269

    Abstract: Si4500DY S0026
    Text: Si4500DY New Product Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.030 @ VGS = 4.5 V "7.0 0.040 @ VGS = 2.5 V "6.0 0.065 @ VGS = –4.5 V "4.5 0.100 @ VGS = –2.5 V


    Original     		PDF Si4500DY 18-Jul-08 S-00269 S0026

    Si4500BDY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4500BDY Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4500BDY 18-Jul-08

    Si4500BDY

    Abstract: Si4500BDY-T1 Si4500BDY-T1-E3
    Text: Si4500BDY Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 rDS(on) (Ω) ID (A) 0.020 at VGS = 4.5 V 9.1 0.030 at VGS = 2.5 V 7.5 0.060 at VGS = - 4.5 V - 5.3 0.100 at VGS = - 2.5 V


    Original     		PDF Si4500BDY Si4500BDY-T1 Si4500BDY-T1-E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si4500BDY Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.020 at VGS = 4.5 V 9.1 0.030 at VGS = 2.5 V 7.5 0.060 at VGS = - 4.5 V - 5.3 0.100 at VGS = - 2.5 V


    Original     		PDF Si4500BDY 2002/95/EC Si4500BDY-T1-E3 Si4500BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si4500BDY

    Abstract: Si4500BDY-T1 Si4500
    Text: Si4500BDY Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel 20 P Channel P-Channel −20 20 rDS(on) (W) ID (A) 0.020 @ VGS = 4.5 V 9.1 0.030 @ VGS = 2.5 V 7.5 0.060 @ VGS = −4.5 V −5.3


    Original     		PDF Si4500BDY Si4500BDY-T1 Si4500BDY--E3 Si4500BDY-T1--E3 S-41428--Rev. 26-Jul-04 Si4500

    Untitled

    Abstract: No abstract text available
    Text: Si4500BDY Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel 20 P Channel P-Channel −20 20 rDS(on) (W) ID (A) 0.020 @ VGS = 4.5 V 9.1 0.030 @ VGS = 2.5 V 7.5 0.060 @ VGS = −4.5 V −5.3


    Original     		PDF Si4500BDY Si4500BDY-T1 Si4500BDY--E3 Si4500BDY-T1--E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si4500BDY Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4500BDY 2002/95/EC Si4500BDY-T1-E3 Si4500BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si4500BDY Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.020 at VGS = 4.5 V 9.1 0.030 at VGS = 2.5 V 7.5 0.060 at VGS = - 4.5 V - 5.3 0.100 at VGS = - 2.5 V


    Original     		PDF Si4500BDY 2002/96/EC Si4500BDY-T1-E3 Si4500BDY-T1-GE3 18-Jul-08

    Si4500BDY

    Abstract: complementary mosfet
    Text: SPICE Device Model Si4500BDY Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4500BDY 30-Jun-03 complementary mosfet

    Si4500DY

    Abstract: No abstract text available
    Text: Si4500DY New Product Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.030 @ VGS = 4.5 V "7.0 0.040 @ VGS = 2.5 V "6.0 0.065 @ VGS = –4.5 V "4.5 0.100 @ VGS = –2.5 V


    Original     		PDF Si4500DY S-00269--Rev. 26-Apr-99

    Si4500DY

    Abstract: No abstract text available
    Text: Si4500DY New Product Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.030 @ VGS = 4.5 V "7.0 0.040 @ VGS = 2.5 V "6.0 0.065 @ VGS = –4.5 V "4.5 0.100 @ VGS = –2.5 V


    Original     		PDF Si4500DY S-00269--Rev. 26-Apr-99

    74676

    Abstract: 1.4542 4835 8942 AN609 Si4500BDY 82801
    Text: Si4500BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4500BDY AN609 08-May-07 74676 1.4542 4835 8942 82801

    Untitled

    Abstract: No abstract text available
    Text: Si4500DY New Product Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.030 @ VGS = 4.5 V "7.0 0.040 @ VGS = 2.5 V "6.0 0.065 @ VGS = –4.5 V "4.5 0.100 @ VGS = –2.5 V


    Original     		PDF Si4500DY 08-Apr-05

    Si4500DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4500DY Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4500DY 02-May-01

    Si4500BDY

    Abstract: Si4500BDY-E3 Si4500BDY-T1 Si4500BDY-T1-E3 Si4500DY
    Text: Specification Comparison Vishay Siliconix Si4500BDY vs. Si4500DY Description: Complementary MOSFET Half-Bridge N- and P-Channel Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si4500BDY Replaces Si4500DY Si4500BDY-E3 (Lead (Pb)-free version) Replaces Si4500DY


    Original     		PDF Si4500BDY Si4500DY Si4500BDY-E3 Si4500BDY-T1 Si4500DY-T1 Si4500BDY-T1-E3

    Untitled

    Abstract: No abstract text available
    Text: Si4500BDY Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 rDS(on) (Ω) ID (A) 0.020 at VGS = 4.5 V 9.1 0.030 at VGS = 2.5 V 7.5 0.060 at VGS = - 4.5 V - 5.3 0.100 at VGS = - 2.5 V


    Original     		PDF Si4500BDY Si4500BDY-T1 Si4500BDY-T1-E3 18-Jul-08

    Si4500BDY

    Abstract: Si4500BDY-T1-E3
    Text: Si4500BDY Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.020 at VGS = 4.5 V 9.1 0.030 at VGS = 2.5 V 7.5 0.060 at VGS = - 4.5 V - 5.3 0.100 at VGS = - 2.5 V


    Original     		PDF Si4500BDY 2002/95/EC Si4500BDY-T1-E3 Si4500BDY-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si4500BDY Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.020 at VGS = 4.5 V 9.1 0.030 at VGS = 2.5 V 7.5 0.060 at VGS = - 4.5 V - 5.3 0.100 at VGS = - 2.5 V


    Original     		PDF Si4500BDY 2002/95/EC Si4500BDY-T1-E3 Si4500BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si4500BDY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4500BDY Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4500BDY S-52295Rev. 31-Oct-05

    5a6 zener diode

    Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
    Text: Subscriber Linecard Table of Contents DATA LINE, Ethernet. 3 DATA LINE, Optical


    Original     		PDF Si4418DY 130mOhm@ Si4420BDY Si6928DQ 35mOhm@ Si6954ADQ 53mOhm@ SiP2800 SUM47N10-24L 24mOhm@ 5a6 zener diode dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    Untitled

    Abstract: No abstract text available
    Text: _ Si4500DY VISHAY Vishay Siliconix New Product Complementary MOSFET Half-Bridge N- and P-Channel PRODUCT SUMMARY V D S (V ) N-Channel 20 P-Channel -2 0 r D S (o n ) ( ) Id (A ) 0.030 @ VGS = 4.5 V ± 7 .0 0.040 @ VGS = 2.5 V ± 6 .0


    OCR Scan     		PDF Si4500DY S2SM735 DD17flflT

    Untitled

    Abstract: No abstract text available
    Text: E L E C T R IC A L O P E R A T IN G S P E C IF IC A T IO N S : TEM PERATURE 1 .0 TURNS RATIO : 2.0 IN D U C T A N C E : 3.0 LEAKAG E 4 .0 IN T E R W IN D IN G 5 .0 DC 6 .0 D IE L E C T R IC RANGE: P 6 -P 8 -P 3 (P 2 -P 7 -P 1 ) : (J 6 -J 3 ) : (J 2 -J 1 )


    OCR Scan     		PDF 10KHz, 590nm CT720034X1