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    onsemi NSI45015WT1G

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    Vishay Siliconix SI4501ADY-T1-E3

    MOSFET N/P-CH 30V/8V 6.3A 8SOIC
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    SI4501ADY-T1-E3 Reel 2,500
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    Vishay Siliconix SI4501ADY-T1-GE3

    MOSFET N/P-CH 30V/8V 6.3A 8SOIC
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    Vishay Siliconix SI4501BDY-T1-GE3

    MOSFET N/P-CH 30V/8V 12A 8SOIC
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    Vishay Intertechnologies SI4501BDY-T1-GE3

    Mosfet Transistor, N And P Channel, 12 A, 30 V, 0.0135 Ohm, 10 V, 800 Mv Rohs Compliant: Yes |Vishay SI4501BDY-T1-GE3
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    SI4501 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4501ADY Vishay Siliconix Complementary (N- and P-Channel) MOSFET Half-Bridge Original PDF
    SI4501ADY Vishay Telefunken Si4501ADY vs. Si4501DY Comparison Original PDF
    Si4501ADY SPICE Device Model Vishay Complementary N- and P-Channel MOSFET Half-Bridge Original PDF
    SI4501ADY-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 30V 6.3A 8SOIC Original PDF
    SI4501ADY-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 30V 6.3A 8-SOIC Original PDF
    SI4501BDY-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET N/P-CH 30V/8V 8SOIC Original PDF
    Si4501DY Vishay Intertechnology Complementary MOSFET Half-Bridge (N- and P-Channel) Original PDF
    SI4501DY Vishay Siliconix Complementary MOSFET Half-Bridge (N- and P-Channel) Original PDF
    Si4501DY SPICE Device Model Vishay Complementary MOSFET Half-Bridge (N- and P-Channel) Original PDF

    SI4501 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si4501A

    Abstract: SI4501BDY
    Text: Specification Comparison Vishay Siliconix Si4501BDY vs. Si4501ADY Description: Package: Pin Out: 30 V N-Channel and 8 V P-Channel, D-S MOSFETs SO-8 Identical Part Number Replacements: Si4501BDY-T1-GE3 replaces Si4501ADY-T1-E3 Si4501BDY-T1-GE3 replaces Si4501ADY-T1-GE3


    Original     		PDF Si4501BDY Si4501ADY Si4501BDY-T1-GE3 Si4501ADY-T1-E3 Si4501ADY-T1-GE3 23-Mar-11 Si4501A

    Si4501DY

    Abstract: Si4501DY-T1-E3
    Text: Si4501DY Vishay Siliconix Complementary MOSFET N- and P-Channel FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel -8 RDS(on) (Ω) ID (A) 0.018 at VGS = 10 V ±9 0.027 at VGS = 4.5 V ± 7.4 0.042 at VGS = - 4.5 V ± 6.2 0.060 at VGS = - 2.5 V ± 5.2


    Original     		PDF Si4501DY 2002/95/EC Si4501DY-T1 Si4501DY-T1-E3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si4501ADY Vishay Siliconix Complementary N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel -8 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4501ADY 2002/95/EC Si4501ADY-T1-E3 Si4501ADY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si4501DY

    Abstract: Si4501ADY Si4501ADY-T1
    Text: Specification Comparison Vishay Siliconix Si4501ADY vs. Si4501DY Description: Complementary MOSFET Half-Bridge N- and P-Channel Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si4501ADY Replaces Si4501DY Si4501ADY—E3 (Lead Free version) Replaces Si4501DY


    Original     		PDF Si4501ADY Si4501DY Si4501ADY--E3 Si4501ADY-T1 Si4501DY-T1 Si4501ADY-T1--E3

    Si4501ADY

    Abstract: Si4501ADY SPICE Device Model
    Text: SPICE Device Model Si4501ADY Vishay Siliconix Complementary N- and P-Channel MOSFET Half-Bridge CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4501ADY 0-to-10V 16-Aug-02 Si4501ADY SPICE Device Model

    Si4501DY

    Abstract: Si4501ADY Si4501ADY-T1 SI4501DY-T1
    Text: Specification Comparison Vishay Siliconix Si4501ADY vs. Si4501DY Description: Complementary MOSFET Half-Bridge N- and P-Channel Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si4501ADY Replaces Si4501DY Si4501ADY-E3 (Lead (Pb)-free version) Replaces Si4501DY


    Original     		PDF Si4501ADY Si4501DY Si4501ADY-E3 Si4501ADY-T1 Si4501DY-T1 Si4501ADY-T1-E3

    Untitled

    Abstract: No abstract text available
    Text: Si4501BDY Vishay Siliconix Complementary N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel -8 ID (A)a Qg (Typ.) RDS(on) () 0.017 at VGS = 10 V 12 0.020 at VGS = 4.5 V 11 0.027 at VGS = - 4.5 V -8 0.037 at VGS = - 2.5 V - 6.8


    Original     		PDF Si4501BDY 2002/95/EC Si4501BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si4501BDY Vishay Siliconix Complementary N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel -8 ID (A)a Qg (Typ.) RDS(on) () 0.017 at VGS = 10 V 12 0.020 at VGS = 4.5 V 11 0.027 at VGS = - 4.5 V -8 0.037 at VGS = - 2.5 V - 6.8


    Original     		PDF Si4501BDY 2002/95/EC Si4501BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si4501ADY

    Abstract: No abstract text available
    Text: Si4501ADY New Product Vishay Siliconix Complementary N- and P-Channel MOSFET Half-Bridge FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel -8 rDS(on) (W) ID (A) 0.018 @ VGS = 10 V 8.8 0.027 @ VGS = 4.5 V 7.0 0.042 @ VGS = -4.5 V - 5.7 0.060 @ VGS = -2.5 V


    Original     		PDF Si4501ADY S-21166--Rev. 29-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: Si4501ADY Vishay Siliconix Complementary N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel -8 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4501ADY 2002/95/EC Si4501ADY-T1-E3 Si4501ADY-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si4501ADY Vishay Siliconix Complementary N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 30 -8 rDS(on) (Ω) ID (A) 0.018 at VGS = 10 V 8.8 0.027 at VGS = 4.5 V 7.0 0.042 at VGS = - 4.5 V - 5.7 0.060 at VGS = - 2.5 V - 4.8 • TrenchFET Power MOSFET


    Original     		PDF Si4501ADY Si4501ADY-T1 Si4501ADY-T1-E3 08-Apr-05

    Si4501ADY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4501ADY Vishay Siliconix Complementary N- and P-Channel MOSFET Half-Bridge CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4501ADY 18-Jul-08

    SI4501DY-T1-E3

    Abstract: No abstract text available
    Text: Si4501DY Vishay Siliconix Complementary MOSFET N- and P-Channel FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel -8 RDS(on) (Ω) ID (A) 0.018 at VGS = 10 V ±9 0.027 at VGS = 4.5 V ± 7.4 0.042 at VGS = - 4.5 V ± 6.2 0.060 at VGS = - 2.5 V ± 5.2


    Original     		PDF Si4501DY 2002/95/EC Si4501DY-T1 Si4501DY-T1-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si4501DY

    Abstract: No abstract text available
    Text: Si4501DY New Product Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel PRODUCT SUMMARY VDS (V) N Channel N-Channel 30 P Channel P-Channel -8 rDS(on) (W) ID (A) 0.018 @ VGS = 10 V "9 0.027 @ VGS = 4.5 V "7.4 0.042 @ VGS = - 4.5 V "6.2 0.060 @ VGS = - 2.5 V


    Original     		PDF Si4501DY S-61812--Rev. 19-Jul-99

    Si4501ADY

    Abstract: 71922
    Text: Si4501ADY Vishay Siliconix Complementary N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel -8 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4501ADY 2002/95/EC Si4501ADY-T1-E3 Si4501ADY-T1-GE3 18-Jul-08 71922

    Untitled

    Abstract: No abstract text available
    Text: Si4501ADY New Product Vishay Siliconix Complementary N- and P-Channel MOSFET Half-Bridge FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel -8 rDS(on) (W) ID (A) 0.018 @ VGS = 10 V 8.8 0.027 @ VGS = 4.5 V 7.0 0.042 @ VGS = -4.5 V - 5.7 0.060 @ VGS = -2.5 V


    Original     		PDF Si4501ADY 08-Apr-05

    Si4501ADY

    Abstract: si4501
    Text: SPICE Device Model Si4501ADY Vishay Siliconix Complementary N- and P-Channel MOSFET Half-Bridge CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4501ADY S-52296Rev. 31-Oct-05 si4501

    Si4501DY

    Abstract: No abstract text available
    Text: Si4501DY New Product Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel –8 rDS(on) (W) ID (A) 0.018 @ VGS = 10 V "9 0.027 @ VGS = 4.5 V "7.4 0.042 @ VGS = –4.5 V "6.2 0.060 @ VGS = –2.5 V


    Original     		PDF Si4501DY S-61812--Rev. 19-Jul-99

    Si4501DY

    Abstract: No abstract text available
    Text: Si4501DY New Product Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel –8 rDS(on) (W) ID (A) 0.018 @ VGS = 10 V "9 0.027 @ VGS = 4.5 V "7.4 0.042 @ VGS = –4.5 V "6.2 0.060 @ VGS = –2.5 V


    Original     		PDF Si4501DY S-61812--Rev. 19-Jul-99

    Untitled

    Abstract: No abstract text available
    Text: Si4501BDY Vishay Siliconix Complementary N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel -8 ID (A)a Qg (Typ.) RDS(on) () 0.017 at VGS = 10 V 12 0.020 at VGS = 4.5 V 11 0.027 at VGS = - 4.5 V -8 0.037 at VGS = - 2.5 V - 6.8


    Original     		PDF Si4501BDY 2002/95/EC Si4501BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si4501ADY Vishay Siliconix Complementary N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 30 -8 rDS(on) (Ω) ID (A) 0.018 at VGS = 10 V 8.8 0.027 at VGS = 4.5 V 7.0 0.042 at VGS = - 4.5 V - 5.7 0.060 at VGS = - 2.5 V - 4.8 • TrenchFET Power MOSFET


    Original     		PDF Si4501ADY Si4501ADY-T1 Si4501ADY-T1-E3 18-Jul-08

    Si4501DY

    Abstract: No abstract text available
    Text: Si4501DY Vishay Siliconix Complementary MOSFET N- and P-Channel PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel -8 rDS(on) (Ω) ID (A) 0.018 at VGS = 10 V ±9 0.027 at VGS = 4.5 V ± 7.4 0.042 at VGS = - 4.5 V ± 6.2 0.060 at VGS = - 2.5 V ± 5.2 Pb-free


    Original     		PDF Si4501DY Si4501DY-T1 Si4501DY-T1-E3 18-Jul-08

    Si4501DY

    Abstract: 71461
    Text: SPICE Device Model Si4501DY Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4501DY 07-May-01 71461

    Si4501ADY

    Abstract: Si4501ADY-T1
    Text: Si4501ADY Vishay Siliconix New Product Complementary N- and P-Channel MOSFET Half-Bridge FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 30 -8 rDS(on) (Ω) ID (A) 0.018 at VGS = 10 V 8.8 0.027 at VGS = 4.5 V 7.0 0.042 at VGS = - 4.5 V - 5.7 0.060 at VGS = - 2.5 V


    Original     		PDF Si4501ADY Si4501ADY-T1 Si4501ADY-T1-E3 08-Apr-05