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Vishay Siliconix SI4804CDY-T1-GE3 MOSFET 2N-CH 30V 8A 8SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4804CDY-T1-GE3	Digi-Reel	4,935		1	1 $1.13 10 $0.707 100 $1.13 1000 $0.32557 10000 $0.32557	Buy Now
	SI4804CDY-T1-GE3	Cut Tape	4,935		1	1 $1.13 10 $0.707 100 $1.13 1000 $0.32557 10000 $0.32557	Buy Now
	SI4804CDY-T1-GE3	Reel	2,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.2891	Buy Now
New Advantage Corporation	SI4804CDY-T1-GE3		7,500		1	1 - 10 - 100 - 1000 - 10000 $0.3503	Buy Now
Vishay Siliconix SI4804BDY-T1-E3 MOSFET 2N-CH 30V 5.7A 8SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4804BDY-T1-E3	Digi-Reel			1	1 $0.91 10 $0.91 100 $0.91 1000 $0.91 10000 $0.91	Buy Now
	SI4804BDY-T1-E3	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	SI4804BDY-T1-E3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Quest Components	SI4804BDY-T1-E3		790			1 $0.84 10 $0.84 100 $0.392 1000 $0.35 10000 $0.35	Buy Now
Vishay Siliconix SI4804CDY-T1-E3 MOSFET 2N-CH 30V 8A 8SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4804CDY-T1-E3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Siliconix SI4804BDY-T1-GE3 MOSFET 2N-CH 30V 5.7A 8SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4804BDY-T1-GE3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SI4804CDY-T1-GE3 Transistor MOSFET Array Dual N-CH 30V 8A 8-Pin SOIC T/R - Tape and Reel (Alt: SI4804CDY-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SI4804CDY-T1-GE3	Reel		18 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.23002	Buy Now
Mouser Electronics	SI4804CDY-T1-GE3		5,209			1 $1.05 10 $0.691 100 $0.458 1000 $0.321 10000 $0.237	Buy Now
Newark	SI4804CDY-T1-GE3	Cut Tape			2,500	1 - 10 - 100 - 1000 $0.327 10000 $0.327	Buy Now
	SI4804CDY-T1-GE3	Reel			2,500	1 $0.335 10 $0.335 100 $0.335 1000 $0.335 10000 $0.303	Buy Now
Bristol Electronics	SI4804CDY-T1-GE3		483			1 - 10 - 100 - 1000 - 10000 -	Get Quote
TTI	SI4804CDY-T1-GE3	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.242	Buy Now

EBV Elektronik	SI4804CDY-T1-GE3			19 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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SI4804 Datasheets (15)

Part	Manufacturer	Description	Datasheet Type	PDF
SI4804BDY	Vishay Siliconix	MOSFET, DUAL NN SO-8MOSFET, DUAL NN SO-8; Transistor type:MOSFET; Transistor polarity:Dual N; Voltage, Vds max:30V; Case style:SO-8; Current, Id cont:7.5A; Current, Idm pulse:30A; Power, Pd:1.1W; Resistance, Rds on:0.022R; SMD:1;	Original	PDF
Si4804BDY	Vishay Siliconix	Dual N-Channel, 30-V (D-S) MOSFET Specification Comparison	Original	PDF
SI4804BDY	Vishay Siliconix	MOSFETs	Original	PDF
Si4804BDY SPICE Device Model	Vishay	Dual N-Channel 30-V (D-S) MOSFET	Original	PDF
SI4804BDY-T1-E3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 5.7A 8-SOIC	Original	PDF
SI4804BDY-T1-GE3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 5.7A 8SOIC	Original	PDF
Si4804BDY vs. Si4804DY	Vishay	Dual N-Channel/ 30-V (D-S) MOSFET Specification Comparison	Original	PDF
SI4804CDY-T1-E3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 8A SO8	Original	PDF
SI4804CDY-T1-GE3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 8A 8SOIC	Original	PDF
Si4804DY	Vishay Intertechnology	Dual N-Channel 30-V (D-S) MOSFET	Original	PDF
SI4804DY	Vishay Siliconix	Dual N-Channel 30-V (D-S) MOSFET	Original	PDF
Si4804DY	Vishay Siliconix	Dual N-Channel, 30-V (D-S) MOSFET Specification Comparison	Original	PDF
Si4804DY SPICE Device Model	Vishay	Dual N-Channel 30-V (D-S) MOSFET	Original	PDF
SI4804DY-T1	Vishay Intertechnology	Dual N-Channel 30-V (D-S) MOSFET	Original	PDF

Si4804DY-T1	Vishay Siliconix	Dual N-Channel 30-V (D-S) MOSFET	Original	PDF

SI4804 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Si4804BDY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.022 at VGS = 10 V 7.5 0.030 at VGS = 4.5 V 6.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized	Original	Si4804BDY 2002/95/EC Si4804BDY-T1-E3 Si4804BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: SPICE Device Model Si4804DY Dual N-Channel 30-V D-S MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse	Original	Si4804DY	PDF
Si4804CDY Abstract: Si4804BDY-T1-E3 Si4804BDY Si4804CDY-T1-GE3 Text: Specification Comparison Vishay Siliconix Si4804CDY vs. Si4804BDY Description: Package: Pin Out: Dual N-Channel, 30-V D-S MOSFET SO-8 Identical Part Number Replacements: Si4804CDY-T1-GE3 replaces Si4804BDY-T1-E3 Si4804CDY-T1-GE3 replaces Si4804BDY-T1-E3	Original	Si4804CDY Si4804BDY Si4804CDY-T1-GE3 Si4804BDY-T1-E3 20-Jul-09	PDF
25717 Abstract: 334 mosfet AN609 Si4804CDY 95288 33256 Text: Si4804CDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,	Original	Si4804CDY AN609, 15-Sep-08 25717 334 mosfet AN609 95288 33256	PDF
Si4804BDY Abstract: Si4804BDY-T1-E3 Si4804BDY-T1-GE3 Text: Si4804BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.022 at VGS = 10 V 7.5 0.030 at VGS = 4.5 V 6.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized	Original	Si4804BDY 2002/95/EC Si4804BDY-T1-E3 Si4804BDY-T1-GE3 18-Jul-08	PDF
Untitled Abstract: No abstract text available Text: Si4804CDY-T1-E3 Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a 0.022 at VGS = 10 V 8 0.027 at VGS = 4.5 V 7.9 • • • • Qg (Typ.) 7 TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested	Original	Si4804CDY-T1-E3 2002/95/EC 11-Mar-11	PDF
Untitled Abstract: No abstract text available Text: Si4804BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5 D Trench FETr Power MOSFET D PWM Optimized D 100% Rg Tested APPLICATIONS D Symmetrical Buck-Boost DC/DC Converter	Original	Si4804BDY Si4804BDY--E3 Si4804BDY-T1--E3 08-Apr-05	PDF
Untitled Abstract: No abstract text available Text: Si4804DY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V "7.5 0.030 @ VGS = 4.5 V "6.5 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 S2 N-Channel MOSFET	Original	Si4804DY S-99201--Rev. 01-Nov-99	PDF
99201 Abstract: Si4804DY Text: Si4804DY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V "7.5 0.030 @ VGS = 4.5 V "6.5 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 S2 N-Channel MOSFET	Original	Si4804DY S-99201--Rev. 01-Nov-99 99201	PDF
Untitled Abstract: No abstract text available Text: Si4804CDY-T1-E3 Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a 0.022 at VGS = 10 V 8 0.027 at VGS = 4.5 V 7.9 • • • • Qg (Typ.) 7 TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested	Original	Si4804CDY-T1-E3 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Si4804CDY Abstract: 82528 S-8252 Text: SPICE Device Model Si4804CDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range	Original	Si4804CDY 18-Jul-08 82528 S-8252	PDF
Untitled Abstract: No abstract text available Text: Si4804DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5 D TrenchFETr Power MOSFET D 100% Rg Tested Pb-free Available SO-8 D1 S1 1 8 D1 G1 2 7 D1 S2 3 6	Original	Si4804DY Si4804DY-T1 Si4804DY--E3 Si4804DY-T1--E3 S-50524--Rev. 28-Mar-05	PDF
Untitled Abstract: No abstract text available Text: Si4804BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5 D Trench FET Power MOSFET D PWM Optimized APPLICATIONS D Symmetrical Buck-Boost DC/DC Converter	Original	Si4804BDY Si4804BDY-T1 S-31062--Rev. 26-May-03	PDF
AN609 Abstract: Si4804BDY Text: Si4804BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si4804BDY AN609 19-Mar-07	PDF

Si4804DY Abstract: Si4804DY-T1 Text: Si4804DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View Ordering Information: Si4804DY Si4804DY-T1 (with Tape and Reel)	Original	Si4804DY Si4804DY-T1 S-31989--Rev. 13-Oct-03	PDF
Si4804DY Abstract: No abstract text available Text: SPICE Device Model Si4804DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4804DY 01-May-01	PDF
Si4804BDY Abstract: No abstract text available Text: \\\ SPICE Device Model Si4804BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4804BDY 0-to-10V 08-Dec-02	PDF
Si4804CDY Abstract: Si4804CDY-T1-GE3 diode 2B NC106 Text: New Product Si4804CDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.022 at VGS = 10 V 8 0.027 at VGS = 4.5 V 7.9 VDS (V) 30 • • • • Qg (Typ.) 7 Halogen-free TrenchFET Power MOSFET 100 % Rg Tested	Original	Si4804CDY Si4804CDY-T1-GE3 18-Jul-08 diode 2B NC106	PDF
Si4804BDY Abstract: Si4804BDY-E3 Si4804BDY-T1-E3 Si4804DY Si4804DY-T1 Text: Specification Comparison Vishay Siliconix Si4804BDY vs. Si4804DY Description: Dual N-Channel, 30 V D-S MOSFET Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si4804BDY Replaces Si4804DY Si4804BDY-E3 (Lead (Pb)-free version) Replaces Si4804DY	Original	Si4804BDY Si4804DY Si4804BDY-E3 Si4804BDY-T1 Si4804DY-T1 Si4804BDY-T1-E3	PDF
Untitled Abstract: No abstract text available Text: Si4804DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5 D TrenchFETr Power MOSFET D 100% Rg Tested Pb-free Available SO-8 D1 S1 1 8 D1 G1 2 7 D1 S2 3 6	Original	Si4804DY Si4804DY-T1 Si4804DY--E3 Si4804DY-T1--E3 08-Apr-05	PDF
Si4804BDY Abstract: Si4804BDY-T1-E3 Si4804BDY-T1-GE3 Text: Si4804BDY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.022 at VGS = 10 V 7.5 0.030 at VGS = 4.5 V 6.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized	Original	Si4804BDY 2002/95/EC Si4804BDY-T1-E3 Si4804BDY-T1-GE3 11-Mar-11	PDF
Si4804BDY Abstract: No abstract text available Text: Si4804BDY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5 D Trench FET Power MOSFET? D PWM Optimized APPLICATIONS D Symmetrical Buck-Boost DC/DC Converter	Original	Si4804BDY S-22049--Rev. 18-Nov-02	PDF
Untitled Abstract: No abstract text available Text: Si4804BDY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.022 at VGS = 10 V 7.5 0.030 at VGS = 4.5 V 6.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized	Original	Si4804BDY 2002/95/EC Si4804BDY-T1-E3 Si4804BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: Si4804BDY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.022 at VGS = 10 V 7.5 0.030 at VGS = 4.5 V 6.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized	Original	Si4804BDY 2002/95/EC Si4804BDY-T1-E3 Si4804BDY-T1-GE3 11-Mar-11	PDF

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Vishay Siliconix SI4804CDY-T1-GE3

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SI4804 Datasheets (15)

SI4804 Datasheets Context Search

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Si4804CDY

25717

Si4804BDY

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99201

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Si4804CDY

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AN609

Si4804DY

Si4804DY

Si4804BDY

Si4804CDY

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Si4804BDY

Si4804BDY

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