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    Vishay Siliconix SI4814BDY-T1-E3

    MOSFET 2N-CH 30V 10A/10.5A 8SOIC
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    DigiKey SI4814BDY-T1-E3 Reel
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    RS SI4814BDY-T1-E3 Bulk 2,500
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    Vishay Siliconix SI4814BDY-T1-GE3

    MOSFET 2N-CH 30V 10A/10.5A 8SOIC
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    Vishay Siliconix SI4814BDYE3

    DUAL N-CHANNEL 30-V (D-S) MOSFET WITH SCHOTTKY DIODE Power Field-Effect Transistor, 10.5A I(D), 30V, 0.018ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA SI4814BDYE3 950
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    SI4814BDY Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI4814BDY-T1-E3 Vishay Dual N-channel 30-v (d-s) Mosfet With Schottky Diode Original PDF
    SI4814BDY-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 10A 8SOIC Original PDF
    SI4814BDY-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 10A 8SOIC Original PDF

    SI4814BDY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si4814DY

    Abstract: Si4814DY-T1-E3 IDM-40 Si4814BDY-T1-E3
    Text: 勝特力科技 886-3-5753170 百年電子 86-755-83289224 Http://www.100y.com.tw Specification Comparison Vishay Siliconix Si4814BDY vs. Si4814DY Description: Package: Pin Out: Dual N-Channel, 30-V D-S MOSFET with Schottky Diode SO-8 Identical Part Number Replacements:


    Original     		PDF Si4814BDY Si4814DY Si4814BDY-T1-E3 Si4814DY-T1-E3 Si4814DY-T1 IDM-40

    Untitled

    Abstract: No abstract text available
    Text: Si4814BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.018 at VGS = 10 V 10 0.023 at VGS = 4.5 V 8.5 0.018 at VGS = 10 V 10.5 0.022 at VGS = 4.5 V


    Original     		PDF Si4814BDY Si4814BDY-T1-E3 Si4814BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    475224

    Abstract: 6803 AN609 92360 75574n
    Text: Si4814BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4814BDY AN609 02-Mar-06 475224 6803 92360 75574n

    SI4814DY-T1-E3

    Abstract: 56 pF CH Si4814BDY-T1-E3 Si4814DY Si4814DY-T1
    Text: Specification Comparison Vishay Siliconix Si4814BDY vs. Si4814DY Description: Dual N-Channel, 30 V D-S MOSFET with Schottky Diode Package: SO-8 Pin Out: Identical Part Number Replacements: Si4814BDY-T1-E3 Replaces Si4814DY-T1-E3 Si4814BDY-T1 Replaces Si4814DY-T1


    Original     		PDF Si4814BDY Si4814DY Si4814BDY-T1-E3 Si4814DY-T1-E3 Si4814BDY-T1 Si4814DY-T1 10-Nov-06 56 pF CH

    CH21212

    Abstract: No abstract text available
    Text: Si4814BDY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 ID (A)a rDS(on) (W) 0.018 @ VGS = 10 V 10 0.023 @ VGS = 4.5 V 8.5 0.018 @ VGS = 10 V 10.5


    Original     		PDF Si4814BDY S-50342--Rev. 28-Feb-05 CH21212

    si4814b

    Abstract: Si4814BDY-T1-E3 si4814bdy
    Text: Si4814BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.018 at VGS = 10 V 10 0.023 at VGS = 4.5 V 8.5 0.018 at VGS = 10 V 10.5 0.022 at VGS = 4.5 V


    Original     		PDF Si4814BDY 18-Jul-08 si4814b Si4814BDY-T1-E3

    4535A

    Abstract: No abstract text available
    Text: SPICE Device Model Si4814BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4814BDY 18-Jul-08 4535A

    Untitled

    Abstract: No abstract text available
    Text: Si4814BDY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 ID (A)a rDS(on) (W) 0.018 @ VGS = 10 V 10 0.023 @ VGS = 4.5 V 8.5 0.018 @ VGS = 10 V 10.5


    Original     		PDF Si4814BDY Si4814BDY--E3 Si4814BDY-T1--E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si4814BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.018 at VGS = 10 V 10 0.023 at VGS = 4.5 V 8.5 0.018 at VGS = 10 V 10.5 0.022 at VGS = 4.5 V


    Original     		PDF Si4814BDY Si4814BDY-T1-E3 Si4814BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4814BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)a rDS(on) (Ω) Channel-1 30 Channel-2 0.018 at VGS = 10 V 10 0.023 at VGS = 4.5 V 8.5 0.018 at VGS = 10 V 10.5 0.022 at VGS = 4.5 V


    Original     		PDF Si4814BDY Si4814BDY-T1-E3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4814BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)a rDS(on) (Ω) Channel-1 30 Channel-2 0.018 at VGS = 10 V 10 0.023 at VGS = 4.5 V 8.5 0.018 at VGS = 10 V 10.5 0.022 at VGS = 4.5 V


    Original     		PDF Si4814BDY Si4814BDY-T1-E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si4814BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.018 at VGS = 10 V 10 0.023 at VGS = 4.5 V 8.5 0.018 at VGS = 10 V 10.5 0.022 at VGS = 4.5 V


    Original     		PDF Si4814BDY Si4814BDY-T1-E3 Si4814BDY-T1-GE3 11-Mar-11

    q406 transistor

    Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
    Text: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original     		PDF SiP41109 SiP41110 SiP41111 75/2A q406 transistor SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS