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    SI4914 Price and Stock

    Vishay Siliconix SI4914DY-T1-E3

    MOSFET 2N-CH 30V 5.5A/5.7A 8SOIC
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    DigiKey SI4914DY-T1-E3 Cut Tape 1
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    SI4914DY-T1-E3 Digi-Reel 1
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    SI4914DY-T1-E3 Reel 2,500
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    Vishay Siliconix SI4914BDY-T1-E3

    MOSFET 2N-CH 30V 8.4A/8A 8SOIC
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    Vishay Siliconix SI4914BDY-T1-GE3

    MOSFET 2N-CH 30V 8.4A/8A 8SOIC
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    DigiKey SI4914BDY-T1-GE3 Digi-Reel 1
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    Vishay Intertechnologies SI4914BDY-T1-GE3

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    Bristol Electronics SI4914BDY-T1-GE3 8,685
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    Quest Components SI4914BDY-T1-GE3 6,948
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    Vishay Intertechnologies SI4914BDY-T1-E3

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    Bristol Electronics SI4914BDY-T1-E3 7,757
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    Find more SI4914 price and stock on Findchips.com

    SI4914 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4914BDY-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 8.4A 8-SOIC Original PDF
    SI4914BDY-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 8.4A 8-SOIC Original PDF
    SI4914DY Vishay Siliconix MOSFETs Original PDF
    SI4914DY-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 5.5A 8-SOIC Original PDF

    SI4914 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    si4914b

    Abstract: si4914 Si4914BDY
    Text: SPICE Device Model Si4914BDY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si4914BDY 18-Jul-08 si4914b si4914

    Si4914B

    Abstract: No abstract text available
    Text: Si4914BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.021 at VGS = 10 V 8.4 0.027 at VGS = 4.5 V 7.4 0.020 at VGS = 10 V 8d 0.025 at VGS = 4.5 V


    Original     		PDF Si4914BDY 2002/95/EC Si4914BDY-T1-E3 Si4914BDY-T1-GE3 11-Mar-11 Si4914B

    3452-2

    Abstract: AN609 Si4914DY si4914
    Text: Si4914DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4914DY AN609 12-Jun-07 3452-2 si4914

    Untitled

    Abstract: No abstract text available
    Text: Si4914BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.021 at VGS = 10 V 8.4 0.027 at VGS = 4.5 V 7.4 0.020 at VGS = 10 V 8d 0.025 at VGS = 4.5 V


    Original     		PDF Si4914BDY 2002/95/EC Si4914BDY-T1-E3 Si4914BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    si4914b

    Abstract: Si4914BDY-T1-E3
    Text: New Product Si4914BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.021 at VGS = 10 V 8.4 0.027 at VGS = 4.5 V 7.4 0.020 at VGS = 10 V 8d 0.025 at VGS = 4.5 V 8d VDS (V) Channel-1 30 Channel-2


    Original     		PDF Si4914BDY 08-Apr-05 si4914b Si4914BDY-T1-E3

    80266

    Abstract: Si4914DY
    Text: SPICE Device Model Si4914DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4914DY 18-Jul-08 80266

    Untitled

    Abstract: No abstract text available
    Text: Si4914DY Vishay Siliconix New Product Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) Channel-1 30 Channel-2 • LITTLE FOOT Plus Integrated Schottky • 100 % Rg Tested ID (A) 0.023 at VGS = 10 V 7.0 0.032 at VGS = 4.5 V


    Original     		PDF Si4914DY Si4914DY-T1-E3 08-Apr-05

    Si4914DY-T1-E3

    Abstract: Si4914DY
    Text: Si4914DY Vishay Siliconix New Product Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) Channel-1 30 Channel-2 • LITTLE FOOT Plus Integrated Schottky • 100 % Rg Tested ID (A) 0.023 at VGS = 10 V 7.0 0.032 at VGS = 4.5 V


    Original     		PDF Si4914DY 18-Jul-08 Si4914DY-T1-E3

    Si4914B

    Abstract: si4914 si4914bdy Si4914BDY-T1-E3 SI4914BD
    Text: Si4914BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.021 at VGS = 10 V 8.4 0.027 at VGS = 4.5 V 7.4 0.020 at VGS = 10 V 8d 0.025 at VGS = 4.5 V


    Original     		PDF Si4914BDY 2002/95/EC 18-Jul-08 Si4914B si4914 Si4914BDY-T1-E3 SI4914BD

    AN609

    Abstract: 72482 si4914bdy 56181
    Text: Si4914BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4914BDY AN609 16-Oct-07 72482 56181

    SI4914BDY-T1-E3

    Abstract: SI4914BDY Si4914DY Si4914DY-T1-E3
    Text: Specification Comparison Vishay Siliconix Si4914BDY vs. Si4914DY Description: Package: Pin Out: Dual N-Channel, 30-V D-S MOSFET with Schottky Diode SO-8 Identical Part Number Replacements: Si4914BDY-T1-E3 replaces Si4914DY-T1-E3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original     		PDF Si4914BDY Si4914DY Si4914BDY-T1-E3 Si4914DY-T1-E3 28-Feb-08

    si4914dy

    Abstract: No abstract text available
    Text: Si4914DY Vishay Siliconix New Product Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) Channel-1 30 Channel-2 • LITTLE FOOT Plus Integrated Schottky • 100 % Rg Tested ID (A) 0.023 at VGS = 10 V 7.0 0.032 at VGS = 4.5 V


    Original     		PDF Si4914DY Si4914DY-T1-E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si4914DY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.023 @ VGS = 10 V 7.0 0.032 @ VGS = 4.5 V 5.6 0.020 @ VGS = 10 V 7.4 0.027 @ VGS = 4.5 V


    Original     		PDF Si4914DY Si4914DY--E3 Si4914DY-T1--E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si4914BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.021 at VGS = 10 V 8.4 0.027 at VGS = 4.5 V 7.4 0.020 at VGS = 10 V 8d 0.025 at VGS = 4.5 V


    Original     		PDF Si4914BDY 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si4914BDY-T1-E3

    Abstract: si4914bdy
    Text: Si4914BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.021 at VGS = 10 V 8.4 0.027 at VGS = 4.5 V 7.4 0.020 at VGS = 10 V 8d 0.025 at VGS = 4.5 V


    Original     		PDF Si4914BDY 2002/95/EC 11-Mar-11 Si4914BDY-T1-E3

    Untitled

    Abstract: No abstract text available
    Text: Si4914BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.021 at VGS = 10 V 8.4 0.027 at VGS = 4.5 V 7.4 0.020 at VGS = 10 V 8d 0.025 at VGS = 4.5 V


    Original     		PDF Si4914BDY 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si4914DY

    Abstract: S408 si4914dy-t1-e3
    Text: Si4914DY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.023 @ VGS = 10 V 7.0 0.032 @ VGS = 4.5 V 5.6 0.020 @ VGS = 10 V 7.4 0.027 @ VGS = 4.5 V


    Original     		PDF Si4914DY S-40855--Rev. 03-May-04 S408 si4914dy-t1-e3

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4914BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.021 at VGS = 10 V 8.4 0.027 at VGS = 4.5 V 7.4 0.020 at VGS = 10 V 8d 0.025 at VGS = 4.5 V


    Original     		PDF Si4914BDY Si4914BDY-T1-E3 Si4914BDY-T1-GE3 18-Jul-08

    813LN

    Abstract: 82c495 b30 c300 - 1 RC410M APL5531-LF 20493-21 RC400MB-AGTL ati sb400 IT8712 NS0013 LF
    Text: 1 2 3 4 6 7 8 EW6 VCC_CORE CPU CORE 5 Page:26 CLOCK GEN ICS951413CGLFT A +3VPCU +3V_S5/+3VSUS +3V CELERON-M/PENTIUM-M +3VPCU +3V_S5 A Page:4 +3VSUS INTEL Mobile_479 CPU +3V Page:2, 3 +5VSUS +5VSUS/+5V +12V +5V Page:24 +12V HOST BUS 400MHZ +1.8VSUS +1.8VSUS/+1.8V


    Original     		PDF ICS951413CGLFT 400MHZ RC410MB/RC410MD PCI1510A 158K-0402-LF 1000P/50V-LF 174K-0603-LF 7K-0402-LF 1000P/50V-LF 0R-0603-LF 813LN 82c495 b30 c300 - 1 RC410M APL5531-LF 20493-21 RC400MB-AGTL ati sb400 IT8712 NS0013 LF

    ICS9LP306

    Abstract: Inventec SC7652 KBC1021 Inventec VAIL 2.0 kahuna rqa130n03 1981HD 51117 TP772
    Text: GALLO 1.0 PV BUILD 2006.02.08 EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX XXXXXXXXXXXX P/N INVENTEC TITLE VER : GALLO 1.0 SIZE CODE A3 CS SHEET REV DOC. NUMBER Model_No 1 OF A01 58 TABLE OF CONTENTS


    Original     		PDF R5000 D5000 R5004 SW5004 21SUYC S5005 S5004 S5001 C5002 1000PF ICS9LP306 Inventec SC7652 KBC1021 Inventec VAIL 2.0 kahuna rqa130n03 1981HD 51117 TP772

    cx3804

    Abstract: pegatron pegatron A35 A35 pegatron diode c0510 pegatron a24 Cx3808 q8607 IT8752E tpc8118
    Text: 5 4 3 M52V BLOCK DIAGRAM 2 1 Power CPU VCORE PENRYN DC&QC Page 80 System Page 3~5 D D Page 81 FSB 1066MHz 1.5VS & 1.05VS LCD Panel Page 82 Page 45 PCIE x16 MXM CRT DDR2 800MHz CANTIGA nVIDIA NB9x Page 46 DDR & VTT DDR2 So-DIMM Page 83 Page 7~9 Page 70 +2.5VS


    Original     		PDF 1066MHz 800MHz IT8752E RTL8111C RJ45/RJ11 G50VX D8107 G60VX cx3804 pegatron pegatron A35 A35 pegatron diode c0510 pegatron a24 Cx3808 q8607 IT8752E tpc8118

    TAIMAG HD 081 A

    Abstract: ce-0702 TAIMAG HA 003 1C-8100 ALC660 CE-0703 0845a asus sw3205 R3627
    Text: 5 4 3 2 1 G1S: MEROM/965-PM/ICH8-M/NB8P-GS BLOCK DIAGRAM CLOCK GEN CK505 ICS9LPR363CGLF-T D Merom CPU FAN + THERMAL SENSOR 478B uFCPGA VRAM CH.C GDDR3 *2 LVDS PAGE 45 PAGE 46 PAGE 50 FSB 800 MHz 136 FBGA PAGE 72 NVIDIA NB8P-GS CRT PAGE 3-6 VRAM CH.A GDDR3 *2


    Original     		PDF MEROM/965-PM/ICH8-M/NB8P-GS CK505) ICS9LPR363CGLF-T 965PM 667MHz RTL8111B ISL6227 FDS2501 TPS51116 MAX1844 TAIMAG HD 081 A ce-0702 TAIMAG HA 003 1C-8100 ALC660 CE-0703 0845a asus sw3205 R3627

    mcp67m

    Abstract: MCP67MV MCP67D MCP67MV- A2 c5304 asus nvidia mcp67 MCP67 C9236 ricoh r5c833
    Text: A B C D E A8N_A8Dc AMD/MCP67MV/MCP67D BLOCK DIAGRAM 1 BATTERY TYPE Sub block Diagram / BOM option 1 3S2P 64 POWER SEQENCE 2 . CPU CPU CAP 5 AMD Turion 64 F/G DDR2 533/667/800 SODIMM X2 3,4 LFB 2 LFB LFB HOST BUS DVI Dual CH. 47 CRT & TV CON 46 LFB VGA CON


    Original     		PDF AMD/MCP67MV/MCP67D MCP67MV/D 33MHz FDW2501 FDW2501 ISL6227 MAX8632 mcp67m MCP67MV MCP67D MCP67MV- A2 c5304 asus nvidia mcp67 MCP67 C9236 ricoh r5c833

    attansic f1

    Abstract: RC415M Attansic l1 RC415ME asus attansic lan schematic Attansic f2 PAD381 PT6319 d1106
    Text: 5 4 3 F5R BLOCK DIAGRAM 2 1 CPU Yonah Single core Yonah Celeron D D Page 2 AGTL+ 133/166MHz LVDS Page 10 DDR2 533/667 RC415ME CRT Single Channel PCIE Page 11 DUAL DDR2 SO-DIMM Page 12,13,14 Page 5,6,7,8,9 PCIE X4 C C MINICARD SB600 Page 28 LAN 10/100 ATTANSIC L2


    Original     		PDF 133/166MHz RC415ME SB600 33MHz ITE8510E ICS951463AGLFT L78L05 F02JK2E) LM4040BIM SI9183DT attansic f1 RC415M Attansic l1 RC415ME asus attansic lan schematic Attansic f2 PAD381 PT6319 d1106