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Vishay Siliconix SI5479DU-T1-GE3 MOSFET P-CH 12V 16A PPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI5479DU-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.50927	Buy Now
Vishay Intertechnologies SI5479DC-T1-E3 Trans MOSFET P-CH 12V 10.3A 8-Pin PowerPAK ChipFET T/R - Tape and Reel (Alt: SI5479DC-T1-E3)
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Avnet Americas	SI5479DC-T1-E3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.5166	Buy Now
Vishay Siliconix SI5479DUT1E3 P-CHANNEL 12-V (D-S) MOSFET Power Field-Effect Transistor, 16A I(D), 12V, 0.021ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	SI5479DUT1E3		3,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote

SI5479 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI5479DU-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 16A CHIPFET		Original	PDF

SI5479 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Si5479DU Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.021 at VGS = - 4.5 V - 16.9 0.028 at VGS = - 2.5 V - 16 0.039 at VGS = - 1.8 V - 16 VDS (V) - 12 Qg (Typ.) 21 nC • • • • Halogen-free TrenchFET Power MOSFET	Original	PDF	Si5479DU Si5479DU-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
si5479 Abstract: No abstract text available Text: Si5479DU Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.021 @ VGS = −4.5 V −16.9 0.028 @ VGS = −2.5 V −16 0.039 @ VGS = −1.8 V −16 VDS (V) −12 Qg (Typ) 21 nC D TrenchFETr Power MOSFET D New Thermally Enhanced PowerPAKr	Original	PDF	Si5479DU Si5479DU-T1--E3 S-50938--Rev. 08-May-05 si5479
Untitled Abstract: No abstract text available Text: Si5479DU Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.021 at VGS = - 4.5 V - 16.9 0.028 at VGS = - 2.5 V - 16 0.039 at VGS = - 1.8 V - 16 VDS (V) - 12 Qg (Typ.) 21 nC • • • • Halogen-free TrenchFET Power MOSFET	Original	PDF	Si5479DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: Si5479DU Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.021 at VGS = - 4.5 V - 16.9 0.028 at VGS = - 2.5 V - 16 0.039 at VGS = - 1.8 V - 16 VDS (V) - 12 Qg (Typ.) 21 nC • • • • Halogen-free TrenchFET Power MOSFET	Original	PDF	Si5479DU 18-Jul-08
4468 Abstract: C 6090 transistor c 6090 AN609 Text: Si5479DU_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	PDF	Si5479DU AN609 20-Jun-07 4468 C 6090 transistor c 6090
Untitled Abstract: No abstract text available Text: Si5479DU Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.021 at VGS = - 4.5 V - 16.9 0.028 at VGS = - 2.5 V - 16 0.039 at VGS = - 1.8 V - 16 VDS (V) - 12 Qg (Typ.) 21 nC • • • • Halogen-free TrenchFET Power MOSFET	Original	PDF	Si5479DU 08-Apr-05
Untitled Abstract: No abstract text available Text: Si5479DU Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.021 at VGS = - 4.5 V - 16.9 0.028 at VGS = - 2.5 V - 16 0.039 at VGS = - 1.8 V - 16 VDS (V) - 12 Qg (Typ.) 21 nC • • • • Halogen-free TrenchFET Power MOSFET	Original	PDF	Si5479DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: Si5479DU Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.021 at VGS = - 4.5 V - 16.9 0.028 at VGS = - 2.5 V - 16 0.039 at VGS = - 1.8 V - 16 VDS (V) - 12 Qg (Typ.) 21 nC • • • • Halogen-free TrenchFET Power MOSFET	Original	PDF	Si5479DU Si5479DU-T1-GE3 11-Mar-11
Untitled Abstract: No abstract text available Text: Si5479DU Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.021 at VGS = - 4.5 V - 16.9 0.028 at VGS = - 2.5 V - 16 0.039 at VGS = - 1.8 V - 16 VDS (V) - 12 Qg (Typ.) 21 nC • • • • Halogen-free TrenchFET Power MOSFET	Original	PDF	Si5479DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: Si5479DU Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.021 at VGS = - 4.5 V - 16.9 0.028 at VGS = - 2.5 V - 16 0.039 at VGS = - 1.8 V - 16 VDS (V) - 12 Qg (Typ.) 21 nC • • • • Halogen-free TrenchFET Power MOSFET	Original	PDF	Si5479DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Si5479DU Abstract: No abstract text available Text: SPICE Device Model Si5479DU Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si5479DU 18-Jul-08
Untitled Abstract: No abstract text available Text: Si5479DU Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.021 @ VGS = −4.5 V −16.9 0.028 @ VGS = −2.5 V −16 0.039 @ VGS = −1.8 V −16 VDS (V) −12 Qg (Typ) 21 nC D TrenchFETr Power MOSFET D New Thermally Enhanced PowerPAKr	Original	PDF	Si5479DU Si5479DU-T1--E3 08-Apr-05
GS 069 Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8 Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no	Original	PDF	Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
si5480 Abstract: SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3 Text: Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 7.4 - 20 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT	Original	PDF	Si6463BDQ Si6459BDQ-T1-GE3 SI5944DU-T1-E3 SI5944DU-T1-GE3 SI5945DU-T1-E3 SI5945DU-T1-GE3 SI5947DU-T1-E3 SI5947DU-T1-GE3 PPAKSC75 si5480 SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3