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    Vishay Siliconix SI6413DQ-T1-GE3

    MOSFET P-CH 20V 7.2A 8TSSOP
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    Vishay Intertechnologies SI6413DQ-T1-GE3

    MOSFETs 20V 8.8A 1.5W 10mohm @ 4.5V
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    SI6413DQ Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI6413DQ Vishay Siliconix MOSFETs Original PDF
    Si6413DQ SPICE Device Model Vishay P-Channel 1.8-V (G-S) MOSFET Original PDF
    Si6413DQ-T1-E3 Vishay Transistor Mosfet P-CH 20V 7.2A 8TSSOP REEL Original PDF
    SI6413DQ-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 7.2A 8TSSOP Original PDF
    SI6413DQ-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 7.2A 8TSSOP Original PDF

    SI6413DQ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si6413DQ

    Abstract: No abstract text available
    Text: SPICE Device Model Si6413DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si6413DQ 19-Mar-03

    Untitled

    Abstract: No abstract text available
    Text: Si6413DQ New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.010 @ VGS = -4.5 V -8.8 0.013 @ VGS = -2.5 V - 7.6 0.016 @ VGS = -1.8 V - 6.8 APPLICATIONS D Load Switch


    Original     		PDF Si6413DQ 08-Apr-05

    Si6413DQ

    Abstract: No abstract text available
    Text: SPICE Device Model Si6413DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si6413DQ S-52526Rev. 12-Dec-05

    Si6413DQ

    Abstract: No abstract text available
    Text: Si6413DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.010 at VGS = - 4.5 V - 8.8 - 20 0.013 at VGS = - 2.5 V - 7.6 0.016 at VGS = - 1.8 V - 6.8 • Halogen-free • TrenchFET Power MOSFET RoHS COMPLIANT


    Original     		PDF Si6413DQ Si6413DQ-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si6413DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.010 at VGS = - 4.5 V - 8.8 - 20 0.013 at VGS = - 2.5 V - 7.6 0.016 at VGS = - 1.8 V - 6.8 • Halogen-free • TrenchFET Power MOSFET RoHS COMPLIANT


    Original     		PDF Si6413DQ Si6413DQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    A30i

    Abstract: No abstract text available
    Text: Si6413DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.010 at VGS = - 4.5 V - 8.8 - 20 0.013 at VGS = - 2.5 V - 7.6 0.016 at VGS = - 1.8 V - 6.8 • Halogen-free • TrenchFET Power MOSFET RoHS COMPLIANT


    Original     		PDF Si6413DQ Si6413DQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 A30i

    Si6413DQ

    Abstract: No abstract text available
    Text: SPICE Device Model Si6413DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si6413DQ 18-Jul-08

    AN609

    Abstract: Si6413DQ 1.4307 matching mosfet
    Text: Si6413DQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si6413DQ AN609 27-Jun-07 1.4307 matching mosfet

    Si6413DQ

    Abstract: 72084
    Text: Si6413DQ New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.010 @ VGS = -4.5 V -8.8 0.013 @ VGS = -2.5 V - 7.6 0.016 @ VGS = -1.8 V - 6.8 APPLICATIONS D Load Switch


    Original     		PDF Si6413DQ S-22384--Rev. 30-Dec-02 72084

    A1818

    Abstract: No abstract text available
    Text: Si6413DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.010 at VGS = - 4.5 V - 8.8 - 20 0.013 at VGS = - 2.5 V - 7.6 0.016 at VGS = - 1.8 V - 6.8 • Halogen-free • TrenchFET Power MOSFET RoHS COMPLIANT


    Original     		PDF Si6413DQ Si6413DQ-T1-GE3 11-Mar-11 A1818

    Siliconix

    Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
    Text: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123


    Original     		PDF 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent

    GS 069

    Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
    Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


    Original     		PDF Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8

    si5480

    Abstract: SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3
    Text: Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 7.4 - 20 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT


    Original     		PDF Si6463BDQ Si6459BDQ-T1-GE3 SI5944DU-T1-E3 SI5944DU-T1-GE3 SI5945DU-T1-E3 SI5945DU-T1-GE3 SI5947DU-T1-E3 SI5947DU-T1-GE3 PPAKSC75 si5480 SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3