72915
Abstract: Si6901DQ tr230
Text: SPICE Device Model Si6901DQ Vishay Siliconix Bi-Directional P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
Si6901DQ
23-May-04
72915
tr230
|
PDF
|
40871
Abstract: Si6901DQ
Text: Si6901DQ New Product Vishay Siliconix Bi-Directional P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) −12 rS1S2(on) (Ω) IS1S2 (A) 0.031 @ VGS = −4.5 V −5.4 0.040 @ VGS = −2.5 V −4.8 0.056 @ VGS = −1.8 V −3.5 D TrenchFETr Power MOSFET
|
Original
|
Si6901DQ
Si6901DQ-T1--E3
S-40871--Rev.
03-May-04
40871
|
PDF
|
Bi-Directional P-Channel mosfet
Abstract: Si6901DQ
Text: Si6901DQ New Product Vishay Siliconix Bi-Directional P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) −12 rS1S2(on) (Ω) IS1S2 (A) 0.031 @ VGS = −4.5 V −5.4 0.040 @ VGS = −2.5 V −4.8 0.056 @ VGS = −1.8 V −3.5 D TrenchFETr Power MOSFET
|
Original
|
Si6901DQ
Si6901DQ-T1--E3
18-Jul-08
Bi-Directional P-Channel mosfet
|
PDF
|
Bi-Directional P-Channel
Abstract: 40871
Text: Si6901DQ New Product Vishay Siliconix Bi-Directional P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) −12 rS1S2(on) (Ω) IS1S2 (A) 0.031 @ VGS = −4.5 V −5.4 0.040 @ VGS = −2.5 V −4.8 0.056 @ VGS = −1.8 V −3.5 D TrenchFETr Power MOSFET
|
Original
|
Si6901DQ
Si6901DQ-T1--E3
08-Apr-05
Bi-Directional P-Channel
40871
|
PDF
|
Si690
Abstract: No abstract text available
Text: Si6901DQ New Product Vishay Siliconix Bi-Directional P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) −12 rS1S2(on) (Ω) IS1S2 (A) 0.031 @ VGS = −4.5 V −5.4 0.040 @ VGS = −2.5 V −4.8 0.056 @ VGS = −1.8 V −3.5 D TrenchFETr Power MOSFET
|
Original
|
Si6901DQ
Si6901DQ-T1--E3
08-Apr-05
Si690
|
PDF
|