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    AN609

    Abstract: 25803 12679
    Text: Si7166DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si7166DP AN609 19-Dec-07 25803 12679 PDF

    s8059

    Abstract: Si7166DP si7166
    Text: SPICE Device Model Si7166DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si7166DP 18-Jul-08 s8059 si7166 PDF