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    SI7356ADP Price and Stock

    Vishay Siliconix SI7356ADP-T1-E3

    MOSFET N-CH 30V 40A PPAK SO-8
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    DigiKey SI7356ADP-T1-E3 Reel
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    Vishay Siliconix SI7356ADP-T1-GE3

    MOSFET N-CH 30V 40A PPAK SO-8
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    Vishay Intertechnologies SI7356ADP-T1-E3

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    Bristol Electronics SI7356ADP-T1-E3 2,968
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    Quest Components SI7356ADP-T1-E3 2,374
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    SI7356ADP-T1-E3 2,230
    • 1 $5.907
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    • 1000 $2.9535
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    SI7356ADP Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI7356ADP-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 40A PPAK 8SOIC Original PDF
    SI7356ADP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 40A PPAK 8SOIC Original PDF

    SI7356ADP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si7356ADP

    Abstract: No abstract text available
    Text: SPICE Device Model Si7356ADP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si7356ADP 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si7356ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.003 at VGS = 10 V 40 0.004 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 46 nC • Halogen-free available • Ultra-Low On-Resistance Using High Density TrenchFET Gen II


    Original     		PDF Si7356ADP Si7356ADP-T1-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si7356ADP

    Abstract: Si7356ADP-T1-E3 Si7356ADP-T1-GE3
    Text: Si7356ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.003 at VGS = 10 V 40 0.004 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 46 nC • Halogen-free available • Ultra-Low On-Resistance Using High Density TrenchFET Gen II


    Original     		PDF Si7356ADP Si7356ADP-T1-E3 Si7356ADP-T1-GE3 18-Jul-08

    SI7356ADP

    Abstract: No abstract text available
    Text: Si7356ADP Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.003 @ VGS = 10 V 40 0.004 @ VGS = 4.5 V 40 VDS (V) 30 Qg (Typ) 46 nC D Ultra-Low On-Resistance Using High Density TrenchFETr Gen II D New Low Thermal Resistance PowerPAKr


    Original     		PDF Si7356ADP 107-mm Si7356ADP-T1--E3 08-Apr-05

    Si7356ADP

    Abstract: 20NC15
    Text: Si7356ADP Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.003 @ VGS = 10 V 40 0.004 @ VGS = 4.5 V 40 VDS (V) 30 Qg (Typ) 46 nC D Ultra-Low On-Resistance Using High Density TrenchFETr Gen II D New Low Thermal Resistance PowerPAKr


    Original     		PDF Si7356ADP 107-mm Si7356ADP-T1--E3 08-Apr-05 20NC15

    Untitled

    Abstract: No abstract text available
    Text: Si7356ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.003 at VGS = 10 V 40 0.004 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 46 nC • Halogen-free available • Ultra-Low On-Resistance Using High Density TrenchFET Gen II


    Original     		PDF Si7356ADP Si7356ADP-T1-E3 Si7356ADP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SI7356ADP

    Abstract: No abstract text available
    Text: Si7356ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.003 at VGS = 10 V 40 0.004 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 46 nC • Halogen-free available • Ultra-Low On-Resistance Using High Density TrenchFET Gen II


    Original     		PDF Si7356ADP Si7356ADP-T1-E3 Si7356ADP-T1-GE3 08-Apr-05

    Si7356ADP

    Abstract: No abstract text available
    Text: Si7356ADP Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.003 @ VGS = 10 V 40 0.004 @ VGS = 4.5 V 40 VDS (V) 30 Qg (Typ) 46 nC D Ultra-Low On-Resistance Using High Density TrenchFETr Gen II D New Low Thermal Resistance PowerPAKr


    Original     		PDF Si7356ADP 107-mm Si7356ADP-T1--E3 S-51011--Rev. 23-May-05

    Si7356ADP-T1-E3

    Abstract: Si7356ADP 74068 Si7356DP Si7356DP-T1 Si7356DP-T1-E3 c2570
    Text: Specification Comparison Vishay Siliconix Si7356ADP vs. Si7356DP Description: N-Channel, 30 V D-S MOSFET Package: PowerPAK SO-8 Pin Out: Identical Part Number Replacements: Si7356ADP-T1-E3 Replaces Si7356DP-T1-E3 Si7356ADP-T1 Replaces Si7356DP-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original     		PDF Si7356ADP Si7356DP Si7356ADP-T1-E3 Si7356DP-T1-E3 Si7356ADP-T1 Si7356DP-T1 09-Nov-06 74068 c2570

    Untitled

    Abstract: No abstract text available
    Text: Si7356ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.003 at VGS = 10 V 40 0.004 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 46 nC • Halogen-free available • Ultra-Low On-Resistance Using High Density TrenchFET Gen II


    Original     		PDF Si7356ADP Si7356ADP-T1-E3 Si7356ADP-T1-GE3 11-Mar-11

    5a6 zener diode

    Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
    Text: Subscriber Linecard Table of Contents DATA LINE, Ethernet. 3 DATA LINE, Optical


    Original     		PDF Si4418DY 130mOhm@ Si4420BDY Si6928DQ 35mOhm@ Si6954ADQ 53mOhm@ SiP2800 SUM47N10-24L 24mOhm@ 5a6 zener diode dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415