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    SI7981DP Search Results

    SI7981DP Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI7981DP Vishay Siliconix MOSFETs Original PDF
    Si7981DP SPICE Device Model Vishay Dual P-Channel 20-V (D-S) MOSFET Original PDF

    SI7981DP Datasheets Context Search

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    3161

    Abstract: Si7981DP
    Text: Si7981DP New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.020 @ VGS = - 4.5 V - 10.9 0.024 @ VGS = - 2.5 V - 10.0 0.033 @ VGS = - 1.8 V - 3.0 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package


    Original
    PDF Si7981DP 07-mm Si7981DP-T1 S-31611--Rev. 11-Aug-03 3161

    72508

    Abstract: Si7981DP
    Text: SPICE Device Model Si7981DP Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si7981DP 03-Sep-03 72508

    3161

    Abstract: Si7981DP
    Text: Si7981DP New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.020 @ VGS = - 4.5 V - 10.9 0.024 @ VGS = - 2.5 V - 10.0 0.033 @ VGS = - 1.8 V - 3.0 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package


    Original
    PDF Si7981DP 07-mm Si7981DP-T1 18-Jul-08 3161

    Untitled

    Abstract: No abstract text available
    Text: Si7981DP New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.020 @ VGS = - 4.5 V - 10.9 0.024 @ VGS = - 2.5 V - 10.0 0.033 @ VGS = - 1.8 V - 3.0 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package


    Original
    PDF Si7981DP 07-mm Si7981DP-T1 08-Apr-05