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    SI8457DB Price and Stock

    Vishay Siliconix SI8457DB-T1-E1

    MOSFET P-CH 12V 4MICRO FOOT
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    DigiKey SI8457DB-T1-E1 Cut Tape 5,410 1
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    SI8457DB-T1-E1 Digi-Reel 5,410 1
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    SI8457DB-T1-E1 Reel 3,000 3,000
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    Vishay Intertechnologies SI8457DB-T1-E1

    Trans MOSFET P-CH 12V 10.2A 4-Pin MICRO FOOT T/R - Tape and Reel (Alt: SI8457DB-T1-E1)
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    Avnet Americas SI8457DB-T1-E1 Reel 21 Weeks 6,000
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    Mouser Electronics SI8457DB-T1-E1 8,068
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    Verical SI8457DB-T1-E1 2,500 36
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    Arrow Electronics SI8457DB-T1-E1 Cut Strips 2,500 21 Weeks 1
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    Newark SI8457DB-T1-E1 Cut Tape 6,000
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    SI8457DB-T1-E1 Reel 6,000
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    Quest Components SI8457DB-T1-E1 184
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    Avnet Asia SI8457DB-T1-E1 15,000 23 Weeks 6,000
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    EBV Elektronik SI8457DB-T1-E1 22 Weeks 3,000
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    Vishay BLH SI8457DB-T1-E1

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    Bristol Electronics SI8457DB-T1-E1 230 12
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    • 100 $0.2925
    • 1000 $0.1688
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    SI8457DB Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI8457DB-T1-E1 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 12V MICROFOOT Original PDF

    SI8457DB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Product Group: Vishay Siliconix, MOSFETs / September 2014 Author: Kim Norton Tel: 1 408-970-5300 E-mail: kim.norton@vishay.com Si8457DB Chipscale P-Channel MOSFET With Industry-First On-Resistance of 35 mΩ at 1.8 V, ± 8 V VGS Rating in a 1.6 mm by 1.6 mm Outline


    Original     		PDF Si8457DB

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si8457DB www.vishay.com Vishay Siliconix P-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF Si8457DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si8457DB www.vishay.com Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () MAX. ID (A) a, e 0.0190 at VGS = -4.5 V -10.2 0.0234 at VGS = -2.5 V -9.2 0.0350 at VGS = -1.8 V -7.5 VDS (V) -12 Qg (TYP.) 37 nC 6 1. 7 845xx x m m


    Original     		PDF Si8457DB 845xx 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si8457DB www.vishay.com Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) MAX. ID (A) a,e 0.0190 at VGS = -4.5 V -10.2 0.0234 at VGS = -2.5 V -9.2 0.0350 at VGS = -1.8 V -7.5 VDS (V) -12 Qg (TYP.) 37 nC 6 1. 7 845xx x m m mm


    Original     		PDF Si8457DB 845xx 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: COMPONENTS FOR THE INTERNET OF THINGS Touching the Human Body In the Home VISHAY and the INTERNET of THINGS IoT Vishay has stepped up to the challenges of the Internet of Things (IoT) with a broad portfolio of unique passive and active solutions. These best-in-class components are optimally suited for the “Things” being


    Original     		PDF VMN-MS6975-1502