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    Vishay Siliconix SI8851EDB-T2-E1

    MOSFET P-CH 20V PWR MICRO FOOT
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    DigiKey SI8851EDB-T2-E1 Reel 9,000 3,000
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    SI8851EDB-T2-E1 Cut Tape 2,618 1
    • 1 $0.6
    • 10 $0.519
    • 100 $0.3591
    • 1000 $0.25533
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    SI8851EDB-T2-E1 Digi-Reel 1
    • 1 $0.6
    • 10 $0.519
    • 100 $0.3591
    • 1000 $0.25533
    • 10000 $0.25533
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    Vishay Intertechnologies SI8851EDB-T2-E1

    Trans MOSFET P-CH 20V 16.7A 30-Pin Power Micro Foot T/R - Tape and Reel (Alt: SI8851EDB-T2-E1)
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    Avnet Americas SI8851EDB-T2-E1 Reel 20 Weeks 6,000
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    Mouser Electronics SI8851EDB-T2-E1 3,000
    • 1 $0.59
    • 10 $0.519
    • 100 $0.359
    • 1000 $0.255
    • 10000 $0.226
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    Newark SI8851EDB-T2-E1 Reel 6,000
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    SI8851EDB-T2-E1 Cut Tape 6,000
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    TTI SI8851EDB-T2-E1 Reel 6,000
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    EBV Elektronik SI8851EDB-T2-E1 21 Weeks 3,000
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    SI8851EDB Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI8851EDB-T2-E1 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 7.7A MICRO FOOT Original PDF

    SI8851EDB Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Si8851EDB www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A) a, d Qg (Typ.) -20 0.0080 at VGS = -4.5 V 0.0086 at VGS = -3.7 V 0.0110 at VGS = -2.5 V 0.0185 at VGS = -1.8 V -16.7 -16.1 -14.2


    Original     		PDF Si8851EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si8851EDB www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF Si8851EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si8851EDB www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 RDS(on) () Max. ID (A) a, d 0.0080 at VGS = -4.5 V -16.7 0.0086 at VGS = -3.7 V -16.1 0.0110 at VGS = -2.5 V -14.2 0.0185 at VGS = -1.8 V -11 • TrenchFET power MOSFET


    Original     		PDF Si8851EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Device Orientation-MICRO FOOT Packages www.vishay.com Vishay Siliconix Device Orientation Options for MOSFETs   Part Number: Si8851EDB  MICRO FOOT 2.4 mm x 2 mm PART NUMBER METHOD Si8851EDB T2 Device on Tape Orientation 8851 xxx 8851 xxx 8851


    Original     		PDF Si8851EDB Specification-PACK-0023-17 13-Jan-14

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET TrenchFET Gen III - P-Channel Breakthrough P-Channel Technology Dramatically Cuts RDS on KEY BENEFITS • Lowest on-resistance per area achieved for a p-channel MOSFET: down to half of


    Original     		PDF SC-75 Si1865DDL Si7997DP SiA923AEDJ SiA929DJ SC-70 SiA527DJ SiA537EDJ VMN-PT0197-1402

    Untitled

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. P-CHANNEL GEN III MOSFETs PowerPAK Thermally Enhanced, High Current Handling Capability LITTLE FOOT® Wide Range of Battery Operated Applications MICRO FOOT® Best RDS on per Outline Area DUAL P-CHANNELS Thermally Enhanced,


    Original     		PDF 1212-8S Si7157DP SiSS23DN Si5415AEDU com/mosfets/12-rated-on-res/ VMN-MS6912-1406

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Extremely Small Chipscale MOSFETs MICRO FOOT Extremely Small Chipscale MOSFETs KEY BENEFITS • Small MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm, 1.5 mm x 1 mm, and 2.4 mm x 2 mm


    Original     		PDF Si8489EDB Si8902AEDB VMN-PT0107-1402